High Performance Enhancement-Mode AlGaN/GaN MIS-HEMT with Selective Fluorine Treatment
A novel enhancement-mode (E-mode) Metal-Insulator-Semiconductor- (MIS-) HEMT with selective fluorine ion (F−) treatment is proposed and its mechanism is investigated. The HEMT features the Selective F− treatment both in the AlGaN channel region and in the thick passivation layer between the gate and...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2015-01-01
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| Series: | Advances in Condensed Matter Physics |
| Online Access: | http://dx.doi.org/10.1155/2015/267680 |
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| Summary: | A novel enhancement-mode (E-mode) Metal-Insulator-Semiconductor- (MIS-) HEMT with selective fluorine ion (F−) treatment is proposed and its mechanism is investigated. The HEMT features the Selective F− treatment both in the AlGaN channel region and in the thick passivation layer between the gate and drain (SFCP-MIS-HEMT). First, the F− in the passivation layer not only extends the depletion region and thus enhances the average electric field (E-field) between the gate and drain by the assisted depletion effect but also reduces the E-field peak at the gate end, leading to a higher breakdown voltage (BV). Second, in the AlGaN channel region, the F− region realizes the E-mode and the region without F− maintains a high drain current (ID). Third, MIS structure suppresses the gate leakage current, increasing the gate swing voltage and the BV. Compared with a MIS-HEMT with F− treatment in whole channel (FC-MIS-HEMT), SFCP-MIS-HEMT increases the BV by 46% and the saturation drain current (ID,sat) by 28%. |
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| ISSN: | 1687-8108 1687-8124 |