A Comparative Study on the Effects of Planarity of Access Region on the Low-Frequency Noise Performance of InAlN/GaN HFETs
The low frequency drain noise-current characteristics of metallic-face InAlN/AlN/GaN heterostructure field effect transistors (HFETs) having fin structures only under the gate, while maintaining a planar structure in the access regions, are compared to those of the HFETs having fin structures stretc...
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IEEE
2024-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
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| Online Access: | https://ieeexplore.ieee.org/document/10506227/ |
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| author | Yatexu Patel Pouya Valizadeh |
| author_facet | Yatexu Patel Pouya Valizadeh |
| author_sort | Yatexu Patel |
| collection | DOAJ |
| description | The low frequency drain noise-current characteristics of metallic-face InAlN/AlN/GaN heterostructure field effect transistors (HFETs) having fin structures only under the gate, while maintaining a planar structure in the access regions, are compared to those of the HFETs having fin structures stretched from source to drain. Evidence indicates that both device types follow the trends of carrier number fluctuation (CNF) with correlated mobility fluctuation (CMF) model of 1/f noise. Accordingly, the noise of the gated channel has been identified as the dominant noise source for both device types. Devices from the former category exhibit improved 1/f noise performance with lower drain noise-current spectral density. This observation could be due to presence of a higher two-dimensional electron gas (2DEG) concentration under the gated-channel overshadowing the carrier number and mobility fluctuations. |
| format | Article |
| id | doaj-art-3856d928e0984a0bb473abe30dce2a50 |
| institution | Kabale University |
| issn | 2168-6734 |
| language | English |
| publishDate | 2024-01-01 |
| publisher | IEEE |
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| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj-art-3856d928e0984a0bb473abe30dce2a502025-01-29T00:00:12ZengIEEEIEEE Journal of the Electron Devices Society2168-67342024-01-011233834410.1109/JEDS.2024.339217410506227A Comparative Study on the Effects of Planarity of Access Region on the Low-Frequency Noise Performance of InAlN/GaN HFETsYatexu Patel0https://orcid.org/0009-0008-6250-7137Pouya Valizadeh1https://orcid.org/0000-0002-4809-6617Department of Electrical and Computer Engineering, Concordia University, Montreal, QC, CanadaDepartment of Electrical and Computer Engineering, Concordia University, Montreal, QC, CanadaThe low frequency drain noise-current characteristics of metallic-face InAlN/AlN/GaN heterostructure field effect transistors (HFETs) having fin structures only under the gate, while maintaining a planar structure in the access regions, are compared to those of the HFETs having fin structures stretched from source to drain. Evidence indicates that both device types follow the trends of carrier number fluctuation (CNF) with correlated mobility fluctuation (CMF) model of 1/f noise. Accordingly, the noise of the gated channel has been identified as the dominant noise source for both device types. Devices from the former category exhibit improved 1/f noise performance with lower drain noise-current spectral density. This observation could be due to presence of a higher two-dimensional electron gas (2DEG) concentration under the gated-channel overshadowing the carrier number and mobility fluctuations.https://ieeexplore.ieee.org/document/10506227/InAlN/GaNheterostructure field effect transistor (HFET)lattice-matchedlow frequency noise (LFN) |
| spellingShingle | Yatexu Patel Pouya Valizadeh A Comparative Study on the Effects of Planarity of Access Region on the Low-Frequency Noise Performance of InAlN/GaN HFETs IEEE Journal of the Electron Devices Society InAlN/GaN heterostructure field effect transistor (HFET) lattice-matched low frequency noise (LFN) |
| title | A Comparative Study on the Effects of Planarity of Access Region on the Low-Frequency Noise Performance of InAlN/GaN HFETs |
| title_full | A Comparative Study on the Effects of Planarity of Access Region on the Low-Frequency Noise Performance of InAlN/GaN HFETs |
| title_fullStr | A Comparative Study on the Effects of Planarity of Access Region on the Low-Frequency Noise Performance of InAlN/GaN HFETs |
| title_full_unstemmed | A Comparative Study on the Effects of Planarity of Access Region on the Low-Frequency Noise Performance of InAlN/GaN HFETs |
| title_short | A Comparative Study on the Effects of Planarity of Access Region on the Low-Frequency Noise Performance of InAlN/GaN HFETs |
| title_sort | comparative study on the effects of planarity of access region on the low frequency noise performance of inaln gan hfets |
| topic | InAlN/GaN heterostructure field effect transistor (HFET) lattice-matched low frequency noise (LFN) |
| url | https://ieeexplore.ieee.org/document/10506227/ |
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