A Physics-Based Compact DC Model for AOS TFTs Considering Effects of Active Layer Thickness Variation
A DC model is proposed for amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) applicable to various active layer thicknesses. With the back surface potential and its coupling with the front surface potential being considered, an explicit potential solution is developed. Then, the analy...
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| Format: | Article |
| Language: | English |
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IEEE
2024-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
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| Online Access: | https://ieeexplore.ieee.org/document/10705102/ |
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| author | Minxi Cai Wei Zhong Bei Liu Piaorong Xu Jing Cao |
| author_facet | Minxi Cai Wei Zhong Bei Liu Piaorong Xu Jing Cao |
| author_sort | Minxi Cai |
| collection | DOAJ |
| description | A DC model is proposed for amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) applicable to various active layer thicknesses. With the back surface potential and its coupling with the front surface potential being considered, an explicit potential solution is developed. Then, the analytical drain current and physical definition of threshold voltage are derived based on a non-chargesheet expression of free charge density. It is verified that in the previous models for AOS TFTs, typically ignoring the back surface potential and the active layer thickness effects could result in obvious deviations in the values of parameters during the characterization of DC performance, especially for scaled devices with low channel thicknesses. By comparing with numerical calculations and experimental data, this model is validated to be more suitable for AOS TFTs with decreased dimensions, which could give more realistic distributions of the density of states in the channel during parameter extraction. |
| format | Article |
| id | doaj-art-36961c317d644a6d81657b1b02ad70b3 |
| institution | Kabale University |
| issn | 2168-6734 |
| language | English |
| publishDate | 2024-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj-art-36961c317d644a6d81657b1b02ad70b32025-01-29T00:00:20ZengIEEEIEEE Journal of the Electron Devices Society2168-67342024-01-011291992710.1109/JEDS.2024.347429110705102A Physics-Based Compact DC Model for AOS TFTs Considering Effects of Active Layer Thickness VariationMinxi Cai0https://orcid.org/0000-0001-5307-7341Wei Zhong1https://orcid.org/0000-0002-0317-7253Bei Liu2Piaorong Xu3https://orcid.org/0009-0002-9769-8769Jing Cao4College of Mathematics and Physics, Hunan University of Arts and Science, Changde, ChinaSchool of Integrated Circuit, Guangdong University of Technology, Guangzhou, ChinaCollege of Mathematics and Physics, Hunan University of Arts and Science, Changde, ChinaCollege of Computer and Information Engineering, Central South University of Forestry and Technology, Changsha, ChinaCollege of Mathematics and Physics, Hunan University of Arts and Science, Changde, ChinaA DC model is proposed for amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) applicable to various active layer thicknesses. With the back surface potential and its coupling with the front surface potential being considered, an explicit potential solution is developed. Then, the analytical drain current and physical definition of threshold voltage are derived based on a non-chargesheet expression of free charge density. It is verified that in the previous models for AOS TFTs, typically ignoring the back surface potential and the active layer thickness effects could result in obvious deviations in the values of parameters during the characterization of DC performance, especially for scaled devices with low channel thicknesses. By comparing with numerical calculations and experimental data, this model is validated to be more suitable for AOS TFTs with decreased dimensions, which could give more realistic distributions of the density of states in the channel during parameter extraction.https://ieeexplore.ieee.org/document/10705102/Amorphous oxide semiconductor (AOS) thin-film transistors (TFTs)compact modelactive layer thickness effects |
| spellingShingle | Minxi Cai Wei Zhong Bei Liu Piaorong Xu Jing Cao A Physics-Based Compact DC Model for AOS TFTs Considering Effects of Active Layer Thickness Variation IEEE Journal of the Electron Devices Society Amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) compact model active layer thickness effects |
| title | A Physics-Based Compact DC Model for AOS TFTs Considering Effects of Active Layer Thickness Variation |
| title_full | A Physics-Based Compact DC Model for AOS TFTs Considering Effects of Active Layer Thickness Variation |
| title_fullStr | A Physics-Based Compact DC Model for AOS TFTs Considering Effects of Active Layer Thickness Variation |
| title_full_unstemmed | A Physics-Based Compact DC Model for AOS TFTs Considering Effects of Active Layer Thickness Variation |
| title_short | A Physics-Based Compact DC Model for AOS TFTs Considering Effects of Active Layer Thickness Variation |
| title_sort | physics based compact dc model for aos tfts considering effects of active layer thickness variation |
| topic | Amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) compact model active layer thickness effects |
| url | https://ieeexplore.ieee.org/document/10705102/ |
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