Influence of the Zn2+ concentration on the defect structure and optical properties in Zn:Fe:Cu:LiNbO3 crystals

Special attention has been paid to holographic storage and 3D display in recent years. LiNbO3 crystal is a distinguished multifunctional material where the field of holographic storage is of paramount importance. In this work, the Czochralski method was employed to grow a series of Zn:Fe:Cu:LiNbO3 c...

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Bibliographic Details
Main Authors: Zhehua Yan, Li Dai, Shunxiang Yang, Zesheng Ji
Format: Article
Language:English
Published: AIP Publishing LLC 2025-01-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/5.0240096
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Summary:Special attention has been paid to holographic storage and 3D display in recent years. LiNbO3 crystal is a distinguished multifunctional material where the field of holographic storage is of paramount importance. In this work, the Czochralski method was employed to grow a series of Zn:Fe:Cu:LiNbO3 crystals with different doping concentrations of Zn2+ ions (1, 3, 5, and 7 mol. %). The effects of doped ions of Zn2+, Fe3+, and Cu2+ on crystal lattice parameters and defect structure were characterized by XRD and inductively coupled plasma atomic emission spectrometer (ICP-AES), and the optical homogeneity was characterized by the birefringence gradient method. The x-ray powder diffraction experiments reveal that the crystal lattice structure remains unaffected by doping. The ICP-AES analysis revealed that as the concentration of Zn2+ ions increased, there was an observed enhancement in the effective segregation coefficient of Fe3+ and Cu2+ ions, while a decrease was noted in that of Zn2+ ions. The birefringent gradient method demonstrates that the optical homogeneity improves with an increasing concentration of Zn2+ ion doping and reaches its maximum when the concentration of Zn2+ ion reaches 7 mol %. For the first time, the optical uniformity of Fe:Cu:LiNbO3 crystals has been enhanced by heavy Zn2+ ion doping, making it possible to apply it in the field of holographic storage.
ISSN:2158-3226