Electrical and photoelectric properties of photocell based on two Schottky barrier contacts Al-p-Si and Ti-p-Si
Task of studies is a development of the structure and way of the fabrication of the photocell capable to take a radiation or in near infrared region of the spectrum (1–1,4) microns, or in the field of (0,5–1,4) microns. Way of fabrication and results of studies of photoelectric features of two s...
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| Format: | Article |
| Language: | English |
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Omsk State Technical University, Federal State Autonoumos Educational Institution of Higher Education
2019-10-01
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| Series: | Омский научный вестник |
| Subjects: | |
| Online Access: | https://www.omgtu.ru/general_information/media_omgtu/journal_of_omsk_research_journal/files/arhiv/2019/4%20(166)/61-65%20%D0%91%D0%BB%D0%B5%D1%81%D0%BC%D0%B0%D0%BD%20%D0%90.%20%D0%98.,%20%D0%91%D1%83%D1%80%D0%BB%D0%B0%D0%BA%D0%BE%D0%B2%20%D0%A0.%20%D0%91.,%20%D0%9F%D0%BE%D0%BB%D0%BE%D0%BD%D1%8F%D0%BD%D0%BA%D0%B8%D0%BD%20%D0%94.%20%D0%90..pdf |
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| _version_ | 1832572868086464512 |
|---|---|
| author | A. I. Blesman R. B. Burlakov D. A. Polonyankin |
| author_facet | A. I. Blesman R. B. Burlakov D. A. Polonyankin |
| author_sort | A. I. Blesman |
| collection | DOAJ |
| description | Task of studies is a development of the structure and way of the
fabrication of the photocell capable to take a radiation or in near
infrared region of the spectrum (1–1,4) microns, or in the field
of (0,5–1,4) microns. Way of fabrication and results of studies of
photoelectric features of two spectrum photocell based on two
Schottky barrier contacts Al-p-Si and Ti-p-Si, situated on opposite
parties Si plate are considered. |
| format | Article |
| id | doaj-art-3588ed6665074d99aa81fa51697902d5 |
| institution | Kabale University |
| issn | 1813-8225 2541-7541 |
| language | English |
| publishDate | 2019-10-01 |
| publisher | Omsk State Technical University, Federal State Autonoumos Educational Institution of Higher Education |
| record_format | Article |
| series | Омский научный вестник |
| spelling | doaj-art-3588ed6665074d99aa81fa51697902d52025-02-02T06:25:53ZengOmsk State Technical University, Federal State Autonoumos Educational Institution of Higher EducationОмский научный вестник1813-82252541-75412019-10-014 (166)616510.25206/1813-8225-2019-166-61-65Electrical and photoelectric properties of photocell based on two Schottky barrier contacts Al-p-Si and Ti-p-SiA. I. Blesman0https://orcid.org/0000-0003-2837-3469R. B. Burlakov1D. A. Polonyankin2Omsk State Technical UniversityDostoevsky Omsk State UniversityOmsk State Technical UniversityTask of studies is a development of the structure and way of the fabrication of the photocell capable to take a radiation or in near infrared region of the spectrum (1–1,4) microns, or in the field of (0,5–1,4) microns. Way of fabrication and results of studies of photoelectric features of two spectrum photocell based on two Schottky barrier contacts Al-p-Si and Ti-p-Si, situated on opposite parties Si plate are considered.https://www.omgtu.ru/general_information/media_omgtu/journal_of_omsk_research_journal/files/arhiv/2019/4%20(166)/61-65%20%D0%91%D0%BB%D0%B5%D1%81%D0%BC%D0%B0%D0%BD%20%D0%90.%20%D0%98.,%20%D0%91%D1%83%D1%80%D0%BB%D0%B0%D0%BA%D0%BE%D0%B2%20%D0%A0.%20%D0%91.,%20%D0%9F%D0%BE%D0%BB%D0%BE%D0%BD%D1%8F%D0%BD%D0%BA%D0%B8%D0%BD%20%D0%94.%20%D0%90..pdfmethod of fabricating the photocellp-type siliconschottky barrier contacts |
| spellingShingle | A. I. Blesman R. B. Burlakov D. A. Polonyankin Electrical and photoelectric properties of photocell based on two Schottky barrier contacts Al-p-Si and Ti-p-Si Омский научный вестник method of fabricating the photocell p-type silicon schottky barrier contacts |
| title | Electrical and photoelectric properties of photocell based on two Schottky barrier contacts Al-p-Si and Ti-p-Si |
| title_full | Electrical and photoelectric properties of photocell based on two Schottky barrier contacts Al-p-Si and Ti-p-Si |
| title_fullStr | Electrical and photoelectric properties of photocell based on two Schottky barrier contacts Al-p-Si and Ti-p-Si |
| title_full_unstemmed | Electrical and photoelectric properties of photocell based on two Schottky barrier contacts Al-p-Si and Ti-p-Si |
| title_short | Electrical and photoelectric properties of photocell based on two Schottky barrier contacts Al-p-Si and Ti-p-Si |
| title_sort | electrical and photoelectric properties of photocell based on two schottky barrier contacts al p si and ti p si |
| topic | method of fabricating the photocell p-type silicon schottky barrier contacts |
| url | https://www.omgtu.ru/general_information/media_omgtu/journal_of_omsk_research_journal/files/arhiv/2019/4%20(166)/61-65%20%D0%91%D0%BB%D0%B5%D1%81%D0%BC%D0%B0%D0%BD%20%D0%90.%20%D0%98.,%20%D0%91%D1%83%D1%80%D0%BB%D0%B0%D0%BA%D0%BE%D0%B2%20%D0%A0.%20%D0%91.,%20%D0%9F%D0%BE%D0%BB%D0%BE%D0%BD%D1%8F%D0%BD%D0%BA%D0%B8%D0%BD%20%D0%94.%20%D0%90..pdf |
| work_keys_str_mv | AT aiblesman electricalandphotoelectricpropertiesofphotocellbasedontwoschottkybarriercontactsalpsiandtipsi AT rbburlakov electricalandphotoelectricpropertiesofphotocellbasedontwoschottkybarriercontactsalpsiandtipsi AT dapolonyankin electricalandphotoelectricpropertiesofphotocellbasedontwoschottkybarriercontactsalpsiandtipsi |