Electrical and photoelectric properties of photocell based on two Schottky barrier contacts Al-p-Si and Ti-p-Si
Task of studies is a development of the structure and way of the fabrication of the photocell capable to take a radiation or in near infrared region of the spectrum (1–1,4) microns, or in the field of (0,5–1,4) microns. Way of fabrication and results of studies of photoelectric features of two s...
Saved in:
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Omsk State Technical University, Federal State Autonoumos Educational Institution of Higher Education
2019-10-01
|
| Series: | Омский научный вестник |
| Subjects: | |
| Online Access: | https://www.omgtu.ru/general_information/media_omgtu/journal_of_omsk_research_journal/files/arhiv/2019/4%20(166)/61-65%20%D0%91%D0%BB%D0%B5%D1%81%D0%BC%D0%B0%D0%BD%20%D0%90.%20%D0%98.,%20%D0%91%D1%83%D1%80%D0%BB%D0%B0%D0%BA%D0%BE%D0%B2%20%D0%A0.%20%D0%91.,%20%D0%9F%D0%BE%D0%BB%D0%BE%D0%BD%D1%8F%D0%BD%D0%BA%D0%B8%D0%BD%20%D0%94.%20%D0%90..pdf |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Summary: | Task of studies is a development of the structure and way of the
fabrication of the photocell capable to take a radiation or in near
infrared region of the spectrum (1–1,4) microns, or in the field
of (0,5–1,4) microns. Way of fabrication and results of studies of
photoelectric features of two spectrum photocell based on two
Schottky barrier contacts Al-p-Si and Ti-p-Si, situated on opposite
parties Si plate are considered. |
|---|---|
| ISSN: | 1813-8225 2541-7541 |