Surface State Capture Cross-Section at the Interface between Silicon and Hafnium Oxide
The interfacial properties between silicon and hafnium oxide (HfO2) are explored by the gated-diode method and the subthreshold measurement. The density of interface-trapped charges, the current induced by surface defect centers, the surface recombination velocity, and the surface state capture cros...
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| Format: | Article |
| Language: | English |
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Wiley
2013-01-01
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| Series: | Advances in Materials Science and Engineering |
| Online Access: | http://dx.doi.org/10.1155/2013/950439 |
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| _version_ | 1832549299001491456 |
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| author | Fu-Chien Chiu |
| author_facet | Fu-Chien Chiu |
| author_sort | Fu-Chien Chiu |
| collection | DOAJ |
| description | The interfacial properties between silicon and hafnium oxide (HfO2) are explored by the gated-diode method and the subthreshold measurement. The density of interface-trapped charges, the current induced by surface defect centers, the surface recombination velocity, and the surface state capture cross-section are obtained in this work. Among the interfacial properties, the surface state capture cross-section is approximately constant even if the postdeposition annealing condition is changed. This effective capture cross-section of surface states is about 2.4 × 10−15 cm2, which may be an inherent nature in the HfO2/Si interface. |
| format | Article |
| id | doaj-art-3588359c8bc24ccf9edd5909d93d26c0 |
| institution | Kabale University |
| issn | 1687-8434 1687-8442 |
| language | English |
| publishDate | 2013-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advances in Materials Science and Engineering |
| spelling | doaj-art-3588359c8bc24ccf9edd5909d93d26c02025-02-03T06:11:41ZengWileyAdvances in Materials Science and Engineering1687-84341687-84422013-01-01201310.1155/2013/950439950439Surface State Capture Cross-Section at the Interface between Silicon and Hafnium OxideFu-Chien Chiu0Department of Electronic Engineering, Ming Chuan University, Taoyuan, Taiwan 333, TaiwanThe interfacial properties between silicon and hafnium oxide (HfO2) are explored by the gated-diode method and the subthreshold measurement. The density of interface-trapped charges, the current induced by surface defect centers, the surface recombination velocity, and the surface state capture cross-section are obtained in this work. Among the interfacial properties, the surface state capture cross-section is approximately constant even if the postdeposition annealing condition is changed. This effective capture cross-section of surface states is about 2.4 × 10−15 cm2, which may be an inherent nature in the HfO2/Si interface.http://dx.doi.org/10.1155/2013/950439 |
| spellingShingle | Fu-Chien Chiu Surface State Capture Cross-Section at the Interface between Silicon and Hafnium Oxide Advances in Materials Science and Engineering |
| title | Surface State Capture Cross-Section at the Interface between Silicon and Hafnium Oxide |
| title_full | Surface State Capture Cross-Section at the Interface between Silicon and Hafnium Oxide |
| title_fullStr | Surface State Capture Cross-Section at the Interface between Silicon and Hafnium Oxide |
| title_full_unstemmed | Surface State Capture Cross-Section at the Interface between Silicon and Hafnium Oxide |
| title_short | Surface State Capture Cross-Section at the Interface between Silicon and Hafnium Oxide |
| title_sort | surface state capture cross section at the interface between silicon and hafnium oxide |
| url | http://dx.doi.org/10.1155/2013/950439 |
| work_keys_str_mv | AT fuchienchiu surfacestatecapturecrosssectionattheinterfacebetweensiliconandhafniumoxide |