High reactivity of H2O vapor on GaN surfaces
Understanding the process of oxidation on the surface of GaN is important for improving metal-oxide-semiconductor (MOS) devices. Real-time X-ray photoelectron spectroscopy was used to observe the dynamic adsorption behavior of GaN surfaces upon irradiation of H2O, O2, N2O, and NO gases. It was found...
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| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Taylor & Francis Group
2022-12-01
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| Series: | Science and Technology of Advanced Materials |
| Subjects: | |
| Online Access: | https://www.tandfonline.com/doi/10.1080/14686996.2022.2052180 |
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