Interfacial reaction and thermomigration of copper/indium joints

Indium is a promising joining material for low-temperature soldering and thermal interface applications. Copper is a common metal pad used to join indium to form solder joints. Interfacial reactions and thermomigration are two important research subjects for the reliability assessment of solder join...

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Main Authors: Zi-Yu Huang, Yen-Ju Chu, Cheng-En Ho, Yu-An Shen, Chih-Ming Chen
Format: Article
Language:English
Published: Elsevier 2025-01-01
Series:Journal of Materials Research and Technology
Subjects:
Online Access:http://www.sciencedirect.com/science/article/pii/S2238785424030308
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author Zi-Yu Huang
Yen-Ju Chu
Cheng-En Ho
Yu-An Shen
Chih-Ming Chen
author_facet Zi-Yu Huang
Yen-Ju Chu
Cheng-En Ho
Yu-An Shen
Chih-Ming Chen
author_sort Zi-Yu Huang
collection DOAJ
description Indium is a promising joining material for low-temperature soldering and thermal interface applications. Copper is a common metal pad used to join indium to form solder joints. Interfacial reactions and thermomigration are two important research subjects for the reliability assessment of solder joints. In this study, the interfacial reactions of copper/indium joints annealed at 210 °C are investigated with a focus on the growth kinetics of intermetallic compounds (IMCs) formed at the joints. Sandwiched copper/indium/copper joints are prepared via thermocompression to study the thermomigration across the joint driven by a temperature gradient of 794 °C cm−1. The results show that the Cu11In9 phase forms at the copper/indium joints, whereas its growth rate is influenced by the impurity content and grain size of the electroplated copper substrates. The thermomigration effect is significant in copper/indium/copper joints, wherein the Cu11In9 phase at the cold end grows at a much faster rate than does that at the hot end. The average product of the diffusivity and molar heat of transport (D × Q∗) for copper in molten indium is calculated to be (3.09 ± 0.21) × 10−2 J cm2 mol−1 s−1.
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series Journal of Materials Research and Technology
spelling doaj-art-32f2a282de7a4f19bb6544aacaad60482025-01-19T06:25:53ZengElsevierJournal of Materials Research and Technology2238-78542025-01-013420512059Interfacial reaction and thermomigration of copper/indium jointsZi-Yu Huang0Yen-Ju Chu1Cheng-En Ho2Yu-An Shen3Chih-Ming Chen4Department of Chemical Engineering, National Chung Hsing University, South Dist., Taichung City, 402, TaiwanDepartment of Chemical Engineering, National Chung Hsing University, South Dist., Taichung City, 402, TaiwanDepartment of Chemical Engineering & Materials Science, Yuan Ze University, Chungli Dist., Taoyuan City, 320, TaiwanDepartment of Materials Science and Engineering, Feng Chia University, Xitun Dist., Taichung City, 407, TaiwanDepartment of Chemical Engineering, National Chung Hsing University, South Dist., Taichung City, 402, Taiwan; Innovation and Development Center of Sustainable Agriculture, National Chung Hsing University, South Dist., Taichung City, 402, Taiwan; Corresponding author. Department of Chemical Engineering, National Chung Hsing University, South Dist., Taichung City, 402, Taiwan.Indium is a promising joining material for low-temperature soldering and thermal interface applications. Copper is a common metal pad used to join indium to form solder joints. Interfacial reactions and thermomigration are two important research subjects for the reliability assessment of solder joints. In this study, the interfacial reactions of copper/indium joints annealed at 210 °C are investigated with a focus on the growth kinetics of intermetallic compounds (IMCs) formed at the joints. Sandwiched copper/indium/copper joints are prepared via thermocompression to study the thermomigration across the joint driven by a temperature gradient of 794 °C cm−1. The results show that the Cu11In9 phase forms at the copper/indium joints, whereas its growth rate is influenced by the impurity content and grain size of the electroplated copper substrates. The thermomigration effect is significant in copper/indium/copper joints, wherein the Cu11In9 phase at the cold end grows at a much faster rate than does that at the hot end. The average product of the diffusivity and molar heat of transport (D × Q∗) for copper in molten indium is calculated to be (3.09 ± 0.21) × 10−2 J cm2 mol−1 s−1.http://www.sciencedirect.com/science/article/pii/S2238785424030308CopperIndiumImpurityGrain sizeThermomigration
spellingShingle Zi-Yu Huang
Yen-Ju Chu
Cheng-En Ho
Yu-An Shen
Chih-Ming Chen
Interfacial reaction and thermomigration of copper/indium joints
Journal of Materials Research and Technology
Copper
Indium
Impurity
Grain size
Thermomigration
title Interfacial reaction and thermomigration of copper/indium joints
title_full Interfacial reaction and thermomigration of copper/indium joints
title_fullStr Interfacial reaction and thermomigration of copper/indium joints
title_full_unstemmed Interfacial reaction and thermomigration of copper/indium joints
title_short Interfacial reaction and thermomigration of copper/indium joints
title_sort interfacial reaction and thermomigration of copper indium joints
topic Copper
Indium
Impurity
Grain size
Thermomigration
url http://www.sciencedirect.com/science/article/pii/S2238785424030308
work_keys_str_mv AT ziyuhuang interfacialreactionandthermomigrationofcopperindiumjoints
AT yenjuchu interfacialreactionandthermomigrationofcopperindiumjoints
AT chengenho interfacialreactionandthermomigrationofcopperindiumjoints
AT yuanshen interfacialreactionandthermomigrationofcopperindiumjoints
AT chihmingchen interfacialreactionandthermomigrationofcopperindiumjoints