Theoretical Study of Excitonic Complexes in GaAs/AlGaAs Quantum Dots Grown by Filling of Nanoholes

In this work, a theoretical study of the electronic and the optical properties of a new family of strain-free GaAs/AlGaAs quantum dots (QDs) obtained by AlGaAs nanohole filling is presented. The considered model consists of solving the three-dimensional effective-mass Schrödinger equation, thus prov...

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Main Authors: Mohamed Omri, Amor Sayari, Larbi Sfaxi
Format: Article
Language:English
Published: Wiley 2021-01-01
Series:Advances in Condensed Matter Physics
Online Access:http://dx.doi.org/10.1155/2021/3928308
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author Mohamed Omri
Amor Sayari
Larbi Sfaxi
author_facet Mohamed Omri
Amor Sayari
Larbi Sfaxi
author_sort Mohamed Omri
collection DOAJ
description In this work, a theoretical study of the electronic and the optical properties of a new family of strain-free GaAs/AlGaAs quantum dots (QDs) obtained by AlGaAs nanohole filling is presented. The considered model consists of solving the three-dimensional effective-mass Schrödinger equation, thus providing a complete description of the neutral and charged complex excitons’ fine structure. The QD size effect on carrier confinement energies, wave functions, and s-p splitting is studied. The direct Coulomb interaction impact on the calculated s and p states’ transition energies is investigated. The behaviour of the binding energy of neutral and charged excitons (X− and X+) and biexciton XX versus QD height is studied. The addition of the correlation effect allows to explain the nature of biexcitons often observed experimentally.
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spelling doaj-art-31244df263fa4f8c8739eaa94a7ca1a92025-02-03T06:12:52ZengWileyAdvances in Condensed Matter Physics1687-81081687-81242021-01-01202110.1155/2021/39283083928308Theoretical Study of Excitonic Complexes in GaAs/AlGaAs Quantum Dots Grown by Filling of NanoholesMohamed Omri0Amor Sayari1Larbi Sfaxi2DeanShip of Scientific Research (DSR), King Abdulaziz University, Jeddah 21589, Saudi ArabiaDepartment of Physics, Faculty of Science, University of Jeddah, P.O. Box 80327, Jeddah 21589, Saudi ArabiaHigh School of Sciences and Technology of Hammam Sousse, Université de Sousse, Sousse, TunisiaIn this work, a theoretical study of the electronic and the optical properties of a new family of strain-free GaAs/AlGaAs quantum dots (QDs) obtained by AlGaAs nanohole filling is presented. The considered model consists of solving the three-dimensional effective-mass Schrödinger equation, thus providing a complete description of the neutral and charged complex excitons’ fine structure. The QD size effect on carrier confinement energies, wave functions, and s-p splitting is studied. The direct Coulomb interaction impact on the calculated s and p states’ transition energies is investigated. The behaviour of the binding energy of neutral and charged excitons (X− and X+) and biexciton XX versus QD height is studied. The addition of the correlation effect allows to explain the nature of biexcitons often observed experimentally.http://dx.doi.org/10.1155/2021/3928308
spellingShingle Mohamed Omri
Amor Sayari
Larbi Sfaxi
Theoretical Study of Excitonic Complexes in GaAs/AlGaAs Quantum Dots Grown by Filling of Nanoholes
Advances in Condensed Matter Physics
title Theoretical Study of Excitonic Complexes in GaAs/AlGaAs Quantum Dots Grown by Filling of Nanoholes
title_full Theoretical Study of Excitonic Complexes in GaAs/AlGaAs Quantum Dots Grown by Filling of Nanoholes
title_fullStr Theoretical Study of Excitonic Complexes in GaAs/AlGaAs Quantum Dots Grown by Filling of Nanoholes
title_full_unstemmed Theoretical Study of Excitonic Complexes in GaAs/AlGaAs Quantum Dots Grown by Filling of Nanoholes
title_short Theoretical Study of Excitonic Complexes in GaAs/AlGaAs Quantum Dots Grown by Filling of Nanoholes
title_sort theoretical study of excitonic complexes in gaas algaas quantum dots grown by filling of nanoholes
url http://dx.doi.org/10.1155/2021/3928308
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