Enhancing pH prediction accuracy in Al2O3 gated ISFET using XGBoost regressor and stacking ensemble learning

Abstract An ion-sensitive field-effect transistor (ISFET) is widely used in environmental and biomedical applications due to its rapid response, miniaturization, and cost-effectiveness. In this study, a numerical model of an Al₂O₃-gated ISFET was developed to detect pH levels. The effects of gate di...

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Main Authors: Ashirbad Panda, Rishikesh Datar, Shreyas Deshpande, Gautam Bacher
Format: Article
Language:English
Published: Nature Portfolio 2025-06-01
Series:Scientific Reports
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Online Access:https://doi.org/10.1038/s41598-025-04530-2
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author Ashirbad Panda
Rishikesh Datar
Shreyas Deshpande
Gautam Bacher
author_facet Ashirbad Panda
Rishikesh Datar
Shreyas Deshpande
Gautam Bacher
author_sort Ashirbad Panda
collection DOAJ
description Abstract An ion-sensitive field-effect transistor (ISFET) is widely used in environmental and biomedical applications due to its rapid response, miniaturization, and cost-effectiveness. In this study, a numerical model of an Al₂O₃-gated ISFET was developed to detect pH levels. The effects of gate dielectric thickness, doping concentration, and temperature on ISFET’s performance were evaluated using IDS–VDS characteristics. An eXtreme Gradient Boosting (XGBoost) regression model was employed to predict pH levels using data obtained from IDS–VDS characteristics. Further, Hyperparameter optimization was performed to tune critical XGBoost-hyperparameters such as maximum depth, minimum child weight, estimators, learning rate, α, and λ. The optimization strategies such as random search, grid search and Bayesian optimization were utilized to improve the efficacy of regressor by minimizing errors and maximizing accuracy in prediction. A stacking ensemble learning approach was also implemented to integrate multiple models, enhancing prediction accuracy and thereby capturing additional information. The XGBoost regressor achieved superior results with R2 = 0.9846, MSE = 0.2342, and MAE = 0.2317, compared to other regressor models. Therefore, the use of XGBoost regressors with hyperparameter optimization and stacking ensemble learning approach is found to be highly effective for pH prediction from ISFET under various operating conditions.
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spelling doaj-art-2ffcfdcdcced49be937ed8e97cee7a3d2025-08-20T02:00:09ZengNature PortfolioScientific Reports2045-23222025-06-0115111210.1038/s41598-025-04530-2Enhancing pH prediction accuracy in Al2O3 gated ISFET using XGBoost regressor and stacking ensemble learningAshirbad Panda0Rishikesh Datar1Shreyas Deshpande2Gautam Bacher3Department of Electrical and Electronics Engineering, BITS Pilani K K Birla Goa CampusDepartment of Electrical and Electronics Engineering, BITS Pilani K K Birla Goa CampusDepartment of Electrical and Electronics Engineering, BITS Pilani K K Birla Goa CampusDepartment of Electrical and Electronics Engineering, BITS Pilani K K Birla Goa CampusAbstract An ion-sensitive field-effect transistor (ISFET) is widely used in environmental and biomedical applications due to its rapid response, miniaturization, and cost-effectiveness. In this study, a numerical model of an Al₂O₃-gated ISFET was developed to detect pH levels. The effects of gate dielectric thickness, doping concentration, and temperature on ISFET’s performance were evaluated using IDS–VDS characteristics. An eXtreme Gradient Boosting (XGBoost) regression model was employed to predict pH levels using data obtained from IDS–VDS characteristics. Further, Hyperparameter optimization was performed to tune critical XGBoost-hyperparameters such as maximum depth, minimum child weight, estimators, learning rate, α, and λ. The optimization strategies such as random search, grid search and Bayesian optimization were utilized to improve the efficacy of regressor by minimizing errors and maximizing accuracy in prediction. A stacking ensemble learning approach was also implemented to integrate multiple models, enhancing prediction accuracy and thereby capturing additional information. The XGBoost regressor achieved superior results with R2 = 0.9846, MSE = 0.2342, and MAE = 0.2317, compared to other regressor models. Therefore, the use of XGBoost regressors with hyperparameter optimization and stacking ensemble learning approach is found to be highly effective for pH prediction from ISFET under various operating conditions.https://doi.org/10.1038/s41598-025-04530-2Al2O3Hyperparameter optimizationISFETRegressorStacking ensemble learningXGBoost
spellingShingle Ashirbad Panda
Rishikesh Datar
Shreyas Deshpande
Gautam Bacher
Enhancing pH prediction accuracy in Al2O3 gated ISFET using XGBoost regressor and stacking ensemble learning
Scientific Reports
Al2O3
Hyperparameter optimization
ISFET
Regressor
Stacking ensemble learning
XGBoost
title Enhancing pH prediction accuracy in Al2O3 gated ISFET using XGBoost regressor and stacking ensemble learning
title_full Enhancing pH prediction accuracy in Al2O3 gated ISFET using XGBoost regressor and stacking ensemble learning
title_fullStr Enhancing pH prediction accuracy in Al2O3 gated ISFET using XGBoost regressor and stacking ensemble learning
title_full_unstemmed Enhancing pH prediction accuracy in Al2O3 gated ISFET using XGBoost regressor and stacking ensemble learning
title_short Enhancing pH prediction accuracy in Al2O3 gated ISFET using XGBoost regressor and stacking ensemble learning
title_sort enhancing ph prediction accuracy in al2o3 gated isfet using xgboost regressor and stacking ensemble learning
topic Al2O3
Hyperparameter optimization
ISFET
Regressor
Stacking ensemble learning
XGBoost
url https://doi.org/10.1038/s41598-025-04530-2
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AT shreyasdeshpande enhancingphpredictionaccuracyinal2o3gatedisfetusingxgboostregressorandstackingensemblelearning
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