Pseudo Molecular Doping and Ambipolarity Tuning in Si Junctionless Nanowire Transistors Using Gaseous Nitrogen Dioxide

Abstract Ambipolar transistors facilitate concurrent transport of both positive (holes) and negative (electrons) charge carriers in the semiconducting channel. Effective manipulation of conduction symmetry and electrical characteristics in ambipolar silicon junctionless nanowire transistors (Si‐JNTs...

Full description

Saved in:

Bibliographic Details
Main Authors:	Vaishali Vardhan, Subhajit Biswas, Sayantan Ghosh, Leonidas Tsetseris, Tandra Ghoshal, Stig Hellebust, Yordan M. Georgiev, Justin D. Holmes
Format:	Article
Language:	English
Published:	Wiley-VCH 2025-02-01
Series:	Advanced Electronic Materials
Subjects:	ambipolar device density functional theory junction less transistor nitrogen dioxide pseudo molecular doping silicon nanowire
Online Access:	https://doi.org/10.1002/aelm.202400338
Tags:	Add Tag No Tags, Be the first to tag this record!

Be the first to leave a comment!

Pseudo Molecular Doping and Ambipolarity Tuning in Si Junctionless Nanowire Transistors Using Gaseous Nitrogen Dioxide

Similar Items