Pseudo Molecular Doping and Ambipolarity Tuning in Si Junctionless Nanowire Transistors Using Gaseous Nitrogen Dioxide

Pseudo Molecular Doping and Ambipolarity Tuning in Si Junctionless Nanowire Transistors Using Gaseous Nitrogen Dioxide

Abstract Ambipolar transistors facilitate concurrent transport of both positive (holes) and negative (electrons) charge carriers in the semiconducting channel. Effective manipulation of conduction symmetry and electrical characteristics in ambipolar silicon junctionless nanowire transistors (Si‐JNTs...

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Bibliographic Details
Main Authors: Vaishali Vardhan, Subhajit Biswas, Sayantan Ghosh, Leonidas Tsetseris, Tandra Ghoshal, Stig Hellebust, Yordan M. Georgiev, Justin D. Holmes
Format: Article
Language:English
Published: Wiley-VCH 2025-02-01
Series:Advanced Electronic Materials
Subjects:
ambipolar device
density functional theory
junction less transistor
nitrogen dioxide
pseudo molecular doping
silicon nanowire
Online Access:https://doi.org/10.1002/aelm.202400338
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