Pseudo Molecular Doping and Ambipolarity Tuning in Si Junctionless Nanowire Transistors Using Gaseous Nitrogen Dioxide
Abstract Ambipolar transistors facilitate concurrent transport of both positive (holes) and negative (electrons) charge carriers in the semiconducting channel. Effective manipulation of conduction symmetry and electrical characteristics in ambipolar silicon junctionless nanowire transistors (Si‐JNTs...
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Wiley-VCH
2025-02-01
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| Series: | Advanced Electronic Materials |
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| Online Access: | https://doi.org/10.1002/aelm.202400338 |
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| author | Vaishali Vardhan Subhajit Biswas Sayantan Ghosh Leonidas Tsetseris Tandra Ghoshal Stig Hellebust Yordan M. Georgiev Justin D. Holmes |
| author_facet | Vaishali Vardhan Subhajit Biswas Sayantan Ghosh Leonidas Tsetseris Tandra Ghoshal Stig Hellebust Yordan M. Georgiev Justin D. Holmes |
| author_sort | Vaishali Vardhan |
| collection | DOAJ |
| description | Abstract Ambipolar transistors facilitate concurrent transport of both positive (holes) and negative (electrons) charge carriers in the semiconducting channel. Effective manipulation of conduction symmetry and electrical characteristics in ambipolar silicon junctionless nanowire transistors (Si‐JNTs) is demonstrated using gaseous nitrogen dioxide (NO2). This involves a dual reaction in both p‐ and n‐type conduction, resulting in a significant decrease in the current in n‐conduction mode and an increase in the p‐conduction mode upon NO2 exposure. Various Si‐JNT parameters, including “on”‐current (Ion), threshold voltage (Vth), and mobility (µ) exhibit dynamic changes in both the p‐ and n‐conduction modes of the ambipolar transistor upon interaction with NO2 (concentration between 2.5 – 50 ppm). Additionally, NO2 exposure to Si‐JNTs with different surface morphologies, that is, unpassivated Si‐JNTs with a native oxide or with a thermally grown oxide (10 nm), show distinct influences on Ion, Vth, and µ, highlighting the effect of surface oxide on NO2‐mediated charge transfer. Interaction with NO2 alters the carrier concentration in the JNT channel, with NO2 acting as an electron acceptor and inducing holes, as supported by Density Functional Theory (DFT) calculations, providing a pathway for charge transfer and “pseudo” molecular doping in ambipolar Si‐JNTs. |
| format | Article |
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| institution | OA Journals |
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| language | English |
| publishDate | 2025-02-01 |
| publisher | Wiley-VCH |
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| series | Advanced Electronic Materials |
| spelling | doaj-art-2f3b10f0108c44999cce1db823f7f77c2025-08-20T02:29:38ZengWiley-VCHAdvanced Electronic Materials2199-160X2025-02-01112n/an/a10.1002/aelm.202400338Pseudo Molecular Doping and Ambipolarity Tuning in Si Junctionless Nanowire Transistors Using Gaseous Nitrogen DioxideVaishali Vardhan0Subhajit Biswas1Sayantan Ghosh2Leonidas Tsetseris3Tandra Ghoshal4Stig Hellebust5Yordan M. Georgiev6Justin D. Holmes7School of Chemistry University College Cork Cork T12 YN60 IrelandSchool of Chemistry University College Cork Cork T12 YN60 IrelandInstitute of Ion Beam Physics and Materials Research Helmholtz‐Zentrum Dresden Rossendorf 01328 Dresden GermanyDepartment of Physics School of Applied Mathematical and Physical Sciences National Technical University of Athens Athens 15780 GreeceAMBER Research Centre and School of Chemistry Trinity College Dublin Dublin 2 Dublin D02AK60 IrelandSchool of Chemistry University College Cork Cork T12 YN60 IrelandInstitute of Ion Beam Physics and Materials Research Helmholtz‐Zentrum Dresden Rossendorf 01328 Dresden GermanySchool of Chemistry University College Cork Cork T12 YN60 IrelandAbstract Ambipolar transistors facilitate concurrent transport of both positive (holes) and negative (electrons) charge carriers in the semiconducting channel. Effective manipulation of conduction symmetry and electrical characteristics in ambipolar silicon junctionless nanowire transistors (Si‐JNTs) is demonstrated using gaseous nitrogen dioxide (NO2). This involves a dual reaction in both p‐ and n‐type conduction, resulting in a significant decrease in the current in n‐conduction mode and an increase in the p‐conduction mode upon NO2 exposure. Various Si‐JNT parameters, including “on”‐current (Ion), threshold voltage (Vth), and mobility (µ) exhibit dynamic changes in both the p‐ and n‐conduction modes of the ambipolar transistor upon interaction with NO2 (concentration between 2.5 – 50 ppm). Additionally, NO2 exposure to Si‐JNTs with different surface morphologies, that is, unpassivated Si‐JNTs with a native oxide or with a thermally grown oxide (10 nm), show distinct influences on Ion, Vth, and µ, highlighting the effect of surface oxide on NO2‐mediated charge transfer. Interaction with NO2 alters the carrier concentration in the JNT channel, with NO2 acting as an electron acceptor and inducing holes, as supported by Density Functional Theory (DFT) calculations, providing a pathway for charge transfer and “pseudo” molecular doping in ambipolar Si‐JNTs.https://doi.org/10.1002/aelm.202400338ambipolar devicedensity functional theoryjunction less transistornitrogen dioxidepseudo molecular dopingsilicon nanowire |
| spellingShingle | Vaishali Vardhan Subhajit Biswas Sayantan Ghosh Leonidas Tsetseris Tandra Ghoshal Stig Hellebust Yordan M. Georgiev Justin D. Holmes Pseudo Molecular Doping and Ambipolarity Tuning in Si Junctionless Nanowire Transistors Using Gaseous Nitrogen Dioxide Advanced Electronic Materials ambipolar device density functional theory junction less transistor nitrogen dioxide pseudo molecular doping silicon nanowire |
| title | Pseudo Molecular Doping and Ambipolarity Tuning in Si Junctionless Nanowire Transistors Using Gaseous Nitrogen Dioxide |
| title_full | Pseudo Molecular Doping and Ambipolarity Tuning in Si Junctionless Nanowire Transistors Using Gaseous Nitrogen Dioxide |
| title_fullStr | Pseudo Molecular Doping and Ambipolarity Tuning in Si Junctionless Nanowire Transistors Using Gaseous Nitrogen Dioxide |
| title_full_unstemmed | Pseudo Molecular Doping and Ambipolarity Tuning in Si Junctionless Nanowire Transistors Using Gaseous Nitrogen Dioxide |
| title_short | Pseudo Molecular Doping and Ambipolarity Tuning in Si Junctionless Nanowire Transistors Using Gaseous Nitrogen Dioxide |
| title_sort | pseudo molecular doping and ambipolarity tuning in si junctionless nanowire transistors using gaseous nitrogen dioxide |
| topic | ambipolar device density functional theory junction less transistor nitrogen dioxide pseudo molecular doping silicon nanowire |
| url | https://doi.org/10.1002/aelm.202400338 |
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