Interfacial Defect Characteristics and Low-temperature Electrical Properties of the Germanium Oxynitride Passivation Film for Ge-Based Metal Oxide Semiconductor and High-Purity Germanium Detectors - Shengjie Du; Xiuxia Li; Menglin Qiu; Yaohui Zhu; Weiyou Tang; Zhi Deng; Yang Tian; Yulan Li; Ke Jia; Zhengcao Li; Jianping Cheng; Shasha Lv (ACS Omega)