Improving Passivation Process of Si Nanocrystals Embedded in SiO2 Using Metal Ion Implantation
We studied the photoluminescence (PL) of Si nanocrystals (Si-NCs) embedded in SiO2 obtained by ion implantation at MeV energy. The Si-NCs are formed at high depth (1-2 μm) inside the SiO2 achieving a robust and better protected system. After metal ion implantation (Ag or Au), and a subsequent therma...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2013-01-01
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| Series: | Journal of Nanotechnology |
| Online Access: | http://dx.doi.org/10.1155/2013/736478 |
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