Improving Passivation Process of Si Nanocrystals Embedded in SiO2 Using Metal Ion Implantation
We studied the photoluminescence (PL) of Si nanocrystals (Si-NCs) embedded in SiO2 obtained by ion implantation at MeV energy. The Si-NCs are formed at high depth (1-2 μm) inside the SiO2 achieving a robust and better protected system. After metal ion implantation (Ag or Au), and a subsequent therma...
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| Format: | Article |
| Language: | English |
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Wiley
2013-01-01
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| Series: | Journal of Nanotechnology |
| Online Access: | http://dx.doi.org/10.1155/2013/736478 |
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| author | Jhovani Bornacelli Jorge Alejandro Reyes Esqueda Luis Rodríguez Fernández Alicia Oliver |
| author_facet | Jhovani Bornacelli Jorge Alejandro Reyes Esqueda Luis Rodríguez Fernández Alicia Oliver |
| author_sort | Jhovani Bornacelli |
| collection | DOAJ |
| description | We studied the photoluminescence (PL) of Si nanocrystals (Si-NCs) embedded in SiO2 obtained by ion implantation at MeV energy. The Si-NCs are formed at high depth (1-2 μm) inside the SiO2 achieving a robust and better protected system. After metal ion implantation (Ag or Au), and a subsequent thermal annealing at 600°C under hydrogen-containing atmosphere, the PL signal exhibits a noticeable increase. The ion metal implantation was done at energies such that its distribution inside the silica does not overlap with the previously implanted Si ion . Under proper annealing Ag or Au nanoparticles (NPs) could be nucleated, and the PL signal from Si-NCs could increase due to plasmonic interactions. However, the ion-metal-implantation-induced damage can enhance the amount of hydrogen, or nitrogen, that diffuses into the SiO2 matrix. As a result, the surface defects on Si-NCs can be better passivated, and consequently, the PL of the system is intensified. We have selected different atmospheres (air, H2/N2 and Ar) to study the relevance of these annealing gases on the final PL from Si-NCs after metal ion implantation. Studies of PL and time-resolved PL indicate that passivation process of surface defects on Si-NCs is more effective when it is assisted by ion metal implantation. |
| format | Article |
| id | doaj-art-2e3bda6815bf4474bfdb0dafc574928c |
| institution | Kabale University |
| issn | 1687-9503 1687-9511 |
| language | English |
| publishDate | 2013-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Journal of Nanotechnology |
| spelling | doaj-art-2e3bda6815bf4474bfdb0dafc574928c2025-02-03T05:46:25ZengWileyJournal of Nanotechnology1687-95031687-95112013-01-01201310.1155/2013/736478736478Improving Passivation Process of Si Nanocrystals Embedded in SiO2 Using Metal Ion ImplantationJhovani Bornacelli0Jorge Alejandro Reyes Esqueda1Luis Rodríguez Fernández2Alicia Oliver3Instituto de Física, Universidad Nacional Autónoma de México, 04510 México, DF, MexicoInstituto de Física, Universidad Nacional Autónoma de México, 04510 México, DF, MexicoInstituto de Física, Universidad Nacional Autónoma de México, 04510 México, DF, MexicoInstituto de Física, Universidad Nacional Autónoma de México, 04510 México, DF, MexicoWe studied the photoluminescence (PL) of Si nanocrystals (Si-NCs) embedded in SiO2 obtained by ion implantation at MeV energy. The Si-NCs are formed at high depth (1-2 μm) inside the SiO2 achieving a robust and better protected system. After metal ion implantation (Ag or Au), and a subsequent thermal annealing at 600°C under hydrogen-containing atmosphere, the PL signal exhibits a noticeable increase. The ion metal implantation was done at energies such that its distribution inside the silica does not overlap with the previously implanted Si ion . Under proper annealing Ag or Au nanoparticles (NPs) could be nucleated, and the PL signal from Si-NCs could increase due to plasmonic interactions. However, the ion-metal-implantation-induced damage can enhance the amount of hydrogen, or nitrogen, that diffuses into the SiO2 matrix. As a result, the surface defects on Si-NCs can be better passivated, and consequently, the PL of the system is intensified. We have selected different atmospheres (air, H2/N2 and Ar) to study the relevance of these annealing gases on the final PL from Si-NCs after metal ion implantation. Studies of PL and time-resolved PL indicate that passivation process of surface defects on Si-NCs is more effective when it is assisted by ion metal implantation.http://dx.doi.org/10.1155/2013/736478 |
| spellingShingle | Jhovani Bornacelli Jorge Alejandro Reyes Esqueda Luis Rodríguez Fernández Alicia Oliver Improving Passivation Process of Si Nanocrystals Embedded in SiO2 Using Metal Ion Implantation Journal of Nanotechnology |
| title | Improving Passivation Process of Si Nanocrystals Embedded in SiO2 Using Metal Ion Implantation |
| title_full | Improving Passivation Process of Si Nanocrystals Embedded in SiO2 Using Metal Ion Implantation |
| title_fullStr | Improving Passivation Process of Si Nanocrystals Embedded in SiO2 Using Metal Ion Implantation |
| title_full_unstemmed | Improving Passivation Process of Si Nanocrystals Embedded in SiO2 Using Metal Ion Implantation |
| title_short | Improving Passivation Process of Si Nanocrystals Embedded in SiO2 Using Metal Ion Implantation |
| title_sort | improving passivation process of si nanocrystals embedded in sio2 using metal ion implantation |
| url | http://dx.doi.org/10.1155/2013/736478 |
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