Topological Attributes of Silicon Carbide SiC4-IIi,j Based on Ve-Degree and Ev-Degree

Topological Attributes of Silicon Carbide SiC4-IIi,j Based on Ve-Degree and Ev-Degree

The study of graphs containing edges and nodes is of great importance in science and in real life. Topological indices TIs are numerical parameters linked to chemical graphs used to estimate the biological, toxicological, and physical properties of chemical compounds. Recently, two terms, ev-degree-...

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Bibliographic Details
Main Authors: Abid Mahboob, Dalal Alrowaili, Sajid Mahboob Alam, Rifaqat Ali, Muhammad Waheed Rasheed, Imran Siddique
Format: Article
Language:English
Published: Wiley 2022-01-01
Series:Journal of Chemistry
Online Access:http://dx.doi.org/10.1155/2022/3188993
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