Topological Attributes of Silicon Carbide SiC4-IIi,j Based on Ve-Degree and Ev-Degree
The study of graphs containing edges and nodes is of great importance in science and in real life. Topological indices TIs are numerical parameters linked to chemical graphs used to estimate the biological, toxicological, and physical properties of chemical compounds. Recently, two terms, ev-degree-...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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Wiley
2022-01-01
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| Series: | Journal of Chemistry |
| Online Access: | http://dx.doi.org/10.1155/2022/3188993 |
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| _version_ | 1832545910008053760 |
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| author | Abid Mahboob Dalal Alrowaili Sajid Mahboob Alam Rifaqat Ali Muhammad Waheed Rasheed Imran Siddique |
| author_facet | Abid Mahboob Dalal Alrowaili Sajid Mahboob Alam Rifaqat Ali Muhammad Waheed Rasheed Imran Siddique |
| author_sort | Abid Mahboob |
| collection | DOAJ |
| description | The study of graphs containing edges and nodes is of great importance in science and in real life. Topological indices TIs are numerical parameters linked to chemical graphs used to estimate the biological, toxicological, and physical properties of chemical compounds. Recently, two terms, ev-degree- and ve-degree-based TIs, have been defined in chemical graph theory. In this paper, we have estimated degree-based TIs, namely, ev-degree Zagreb M type index, ev-degree Randic R index, ve-degree atom-bond connectivity ABC index, ve-degree geometric arithmetic index GA, ve-degree harmonic H index, and ve-degree sum-connectivity index for SiC4-IIi,j. |
| format | Article |
| id | doaj-art-2df5aeb27d134bb9bc6e30f00582124d |
| institution | Kabale University |
| issn | 2090-9071 |
| language | English |
| publishDate | 2022-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Journal of Chemistry |
| spelling | doaj-art-2df5aeb27d134bb9bc6e30f00582124d2025-02-03T07:24:17ZengWileyJournal of Chemistry2090-90712022-01-01202210.1155/2022/3188993Topological Attributes of Silicon Carbide SiC4-IIi,j Based on Ve-Degree and Ev-DegreeAbid Mahboob0Dalal Alrowaili1Sajid Mahboob Alam2Rifaqat Ali3Muhammad Waheed Rasheed4Imran Siddique5Department of MathematicsDepartment of MathematicsSchool of MathematicsDepartment of MathematicsDepartment of MathematicsDepartment of MathematicsThe study of graphs containing edges and nodes is of great importance in science and in real life. Topological indices TIs are numerical parameters linked to chemical graphs used to estimate the biological, toxicological, and physical properties of chemical compounds. Recently, two terms, ev-degree- and ve-degree-based TIs, have been defined in chemical graph theory. In this paper, we have estimated degree-based TIs, namely, ev-degree Zagreb M type index, ev-degree Randic R index, ve-degree atom-bond connectivity ABC index, ve-degree geometric arithmetic index GA, ve-degree harmonic H index, and ve-degree sum-connectivity index for SiC4-IIi,j.http://dx.doi.org/10.1155/2022/3188993 |
| spellingShingle | Abid Mahboob Dalal Alrowaili Sajid Mahboob Alam Rifaqat Ali Muhammad Waheed Rasheed Imran Siddique Topological Attributes of Silicon Carbide SiC4-IIi,j Based on Ve-Degree and Ev-Degree Journal of Chemistry |
| title | Topological Attributes of Silicon Carbide SiC4-IIi,j Based on Ve-Degree and Ev-Degree |
| title_full | Topological Attributes of Silicon Carbide SiC4-IIi,j Based on Ve-Degree and Ev-Degree |
| title_fullStr | Topological Attributes of Silicon Carbide SiC4-IIi,j Based on Ve-Degree and Ev-Degree |
| title_full_unstemmed | Topological Attributes of Silicon Carbide SiC4-IIi,j Based on Ve-Degree and Ev-Degree |
| title_short | Topological Attributes of Silicon Carbide SiC4-IIi,j Based on Ve-Degree and Ev-Degree |
| title_sort | topological attributes of silicon carbide sic4 iii j based on ve degree and ev degree |
| url | http://dx.doi.org/10.1155/2022/3188993 |
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