Angle-Resolved Intensity of In-Axis/Off-Axis Polarized Micro-Raman Spectroscopy for Monocrystalline Silicon
Monocrystalline silicon (c-Si) is still an important material related to microelectronics/optoelectronics. The nondestructive measurement of the c-Si material and its microstructure is commonly required in scientific research and industrial applications, for which Raman spectroscopy is an indispensa...
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| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
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Wiley
2021-01-01
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| Series: | Journal of Spectroscopy |
| Online Access: | http://dx.doi.org/10.1155/2021/2860007 |
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| author | Ying Chang Saisai He Mingyuan Sun Aixia Xiao Jiaxin Zhao Lulu Ma Wei Qiu |
| author_facet | Ying Chang Saisai He Mingyuan Sun Aixia Xiao Jiaxin Zhao Lulu Ma Wei Qiu |
| author_sort | Ying Chang |
| collection | DOAJ |
| description | Monocrystalline silicon (c-Si) is still an important material related to microelectronics/optoelectronics. The nondestructive measurement of the c-Si material and its microstructure is commonly required in scientific research and industrial applications, for which Raman spectroscopy is an indispensable method. However, Raman measurements based on the specific fixed Raman geometry/polarization configuration are limited for the quantified analysis of c-Si performance, which makes it difficult to meet the high-end requirements of advanced silicon-based microelectronics and optoelectronics. Angle-resolved Raman measurements have become a new trend of experimental analysis in the field of materials, physics, mechanics, and optics. In this paper, the characteristics of the angle-resolved polarized Raman scattering of c-Si under the in-axis and off-axis configurations are systematically analyzed. A general theoretical model of the angle-resolved Raman intensity is established, which includes several alterable angle parameters, including the inclination angle, rotation angle of the sample, and polarization directions of the incident laser and scattered light. The diversification of the Raman intensity is given at different angles for various geometries and polarization configurations. The theoretical model is verified and calibrated by typical experiments. In addition, this work provides a reliable basis for the analysis of complex polarized Raman experiments on silicon-based structures. |
| format | Article |
| id | doaj-art-2d753deebc324f8b9dad9ddb5833df44 |
| institution | Kabale University |
| issn | 2314-4939 |
| language | English |
| publishDate | 2021-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Journal of Spectroscopy |
| spelling | doaj-art-2d753deebc324f8b9dad9ddb5833df442025-02-03T06:45:20ZengWileyJournal of Spectroscopy2314-49392021-01-01202110.1155/2021/2860007Angle-Resolved Intensity of In-Axis/Off-Axis Polarized Micro-Raman Spectroscopy for Monocrystalline SiliconYing Chang0Saisai He1Mingyuan Sun2Aixia Xiao3Jiaxin Zhao4Lulu Ma5Wei Qiu6Tianjin Key Laboratory of Modern Engineering MechanicsTianjin Key Laboratory of Modern Engineering MechanicsTianjin Key Laboratory of Modern Engineering MechanicsTianjin Key Laboratory of Modern Engineering MechanicsTianjin Key Laboratory of Modern Engineering MechanicsTianjin Key Laboratory of Modern Engineering MechanicsTianjin Key Laboratory of Modern Engineering MechanicsMonocrystalline silicon (c-Si) is still an important material related to microelectronics/optoelectronics. The nondestructive measurement of the c-Si material and its microstructure is commonly required in scientific research and industrial applications, for which Raman spectroscopy is an indispensable method. However, Raman measurements based on the specific fixed Raman geometry/polarization configuration are limited for the quantified analysis of c-Si performance, which makes it difficult to meet the high-end requirements of advanced silicon-based microelectronics and optoelectronics. Angle-resolved Raman measurements have become a new trend of experimental analysis in the field of materials, physics, mechanics, and optics. In this paper, the characteristics of the angle-resolved polarized Raman scattering of c-Si under the in-axis and off-axis configurations are systematically analyzed. A general theoretical model of the angle-resolved Raman intensity is established, which includes several alterable angle parameters, including the inclination angle, rotation angle of the sample, and polarization directions of the incident laser and scattered light. The diversification of the Raman intensity is given at different angles for various geometries and polarization configurations. The theoretical model is verified and calibrated by typical experiments. In addition, this work provides a reliable basis for the analysis of complex polarized Raman experiments on silicon-based structures.http://dx.doi.org/10.1155/2021/2860007 |
| spellingShingle | Ying Chang Saisai He Mingyuan Sun Aixia Xiao Jiaxin Zhao Lulu Ma Wei Qiu Angle-Resolved Intensity of In-Axis/Off-Axis Polarized Micro-Raman Spectroscopy for Monocrystalline Silicon Journal of Spectroscopy |
| title | Angle-Resolved Intensity of In-Axis/Off-Axis Polarized Micro-Raman Spectroscopy for Monocrystalline Silicon |
| title_full | Angle-Resolved Intensity of In-Axis/Off-Axis Polarized Micro-Raman Spectroscopy for Monocrystalline Silicon |
| title_fullStr | Angle-Resolved Intensity of In-Axis/Off-Axis Polarized Micro-Raman Spectroscopy for Monocrystalline Silicon |
| title_full_unstemmed | Angle-Resolved Intensity of In-Axis/Off-Axis Polarized Micro-Raman Spectroscopy for Monocrystalline Silicon |
| title_short | Angle-Resolved Intensity of In-Axis/Off-Axis Polarized Micro-Raman Spectroscopy for Monocrystalline Silicon |
| title_sort | angle resolved intensity of in axis off axis polarized micro raman spectroscopy for monocrystalline silicon |
| url | http://dx.doi.org/10.1155/2021/2860007 |
| work_keys_str_mv | AT yingchang angleresolvedintensityofinaxisoffaxispolarizedmicroramanspectroscopyformonocrystallinesilicon AT saisaihe angleresolvedintensityofinaxisoffaxispolarizedmicroramanspectroscopyformonocrystallinesilicon AT mingyuansun angleresolvedintensityofinaxisoffaxispolarizedmicroramanspectroscopyformonocrystallinesilicon AT aixiaxiao angleresolvedintensityofinaxisoffaxispolarizedmicroramanspectroscopyformonocrystallinesilicon AT jiaxinzhao angleresolvedintensityofinaxisoffaxispolarizedmicroramanspectroscopyformonocrystallinesilicon AT luluma angleresolvedintensityofinaxisoffaxispolarizedmicroramanspectroscopyformonocrystallinesilicon AT weiqiu angleresolvedintensityofinaxisoffaxispolarizedmicroramanspectroscopyformonocrystallinesilicon |