Burst Laser-Driven Plasmonic Photochemical Nanolithography of Silicon with Active Structural Modulation

Femtosecond laser ablation-driven periodic surface structuring offers a promising method for large-scale and high-throughput nanolithography technique. However, the self-organized periodic structures typically manifest constraints in terms of tunable period and depth, as well as suboptimal regularit...

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Main Authors: Liping Shi, Ji Yan, Shuyao Zhang, Panpan Niu, Jiao Geng, Günter Steinmeyer
Format: Article
Language:English
Published: American Association for the Advancement of Science (AAAS) 2025-01-01
Series:Ultrafast Science
Online Access:https://spj.science.org/doi/10.34133/ultrafastscience.0084
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author Liping Shi
Ji Yan
Shuyao Zhang
Panpan Niu
Jiao Geng
Günter Steinmeyer
author_facet Liping Shi
Ji Yan
Shuyao Zhang
Panpan Niu
Jiao Geng
Günter Steinmeyer
author_sort Liping Shi
collection DOAJ
description Femtosecond laser ablation-driven periodic surface structuring offers a promising method for large-scale and high-throughput nanolithography technique. However, the self-organized periodic structures typically manifest constraints in terms of tunable period and depth, as well as suboptimal regularity, which restricts their broader application potential. Here, in terms of a rarely explored laser-induced photochemical mechanism for nonablative structuring, we demonstrate manufacturing of sub-wavelength oxidative grating structures on silicon films with active structural modulation. In this scenario, the plasmonic field plays a pivotal role in dragging oxygen ions from surface into the silicon, greatly speeding up oxidation rates. While high oxygen doping levels can already be achieved with single-pulse exposure, far superior results are obtained with the application of 40-MHz burst mode pulse trains, mitigating the formation of excessively large nanocrystallites. Furthermore, it is revealed that the periodicity and modulation depth of laser-writing nanograting are both dependent on the number of pulse per burst. This offers a convenient scheme for actively controlling laser plasmonic lithography.
format Article
id doaj-art-2cddb22280a246adb756ac9a1e8d2a63
institution Kabale University
issn 2765-8791
language English
publishDate 2025-01-01
publisher American Association for the Advancement of Science (AAAS)
record_format Article
series Ultrafast Science
spelling doaj-art-2cddb22280a246adb756ac9a1e8d2a632025-02-06T08:00:30ZengAmerican Association for the Advancement of Science (AAAS)Ultrafast Science2765-87912025-01-01510.34133/ultrafastscience.0084Burst Laser-Driven Plasmonic Photochemical Nanolithography of Silicon with Active Structural ModulationLiping Shi0Ji Yan1Shuyao Zhang2Panpan Niu3Jiao Geng4Günter Steinmeyer5Hangzhou Institute of Technology, Xidian University, Hangzhou 311200, China.Hangzhou Institute of Technology, Xidian University, Hangzhou 311200, China.Hangzhou Institute of Technology, Xidian University, Hangzhou 311200, China.Hangzhou Institute of Technology, Xidian University, Hangzhou 311200, China.Hangzhou Institute of Technology, Xidian University, Hangzhou 311200, China.Max Born Institute for Nonlinear Optics and Short Pulse Spectroscopy, Berlin 12489, Germany.Femtosecond laser ablation-driven periodic surface structuring offers a promising method for large-scale and high-throughput nanolithography technique. However, the self-organized periodic structures typically manifest constraints in terms of tunable period and depth, as well as suboptimal regularity, which restricts their broader application potential. Here, in terms of a rarely explored laser-induced photochemical mechanism for nonablative structuring, we demonstrate manufacturing of sub-wavelength oxidative grating structures on silicon films with active structural modulation. In this scenario, the plasmonic field plays a pivotal role in dragging oxygen ions from surface into the silicon, greatly speeding up oxidation rates. While high oxygen doping levels can already be achieved with single-pulse exposure, far superior results are obtained with the application of 40-MHz burst mode pulse trains, mitigating the formation of excessively large nanocrystallites. Furthermore, it is revealed that the periodicity and modulation depth of laser-writing nanograting are both dependent on the number of pulse per burst. This offers a convenient scheme for actively controlling laser plasmonic lithography.https://spj.science.org/doi/10.34133/ultrafastscience.0084
spellingShingle Liping Shi
Ji Yan
Shuyao Zhang
Panpan Niu
Jiao Geng
Günter Steinmeyer
Burst Laser-Driven Plasmonic Photochemical Nanolithography of Silicon with Active Structural Modulation
Ultrafast Science
title Burst Laser-Driven Plasmonic Photochemical Nanolithography of Silicon with Active Structural Modulation
title_full Burst Laser-Driven Plasmonic Photochemical Nanolithography of Silicon with Active Structural Modulation
title_fullStr Burst Laser-Driven Plasmonic Photochemical Nanolithography of Silicon with Active Structural Modulation
title_full_unstemmed Burst Laser-Driven Plasmonic Photochemical Nanolithography of Silicon with Active Structural Modulation
title_short Burst Laser-Driven Plasmonic Photochemical Nanolithography of Silicon with Active Structural Modulation
title_sort burst laser driven plasmonic photochemical nanolithography of silicon with active structural modulation
url https://spj.science.org/doi/10.34133/ultrafastscience.0084
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AT shuyaozhang burstlaserdrivenplasmonicphotochemicalnanolithographyofsiliconwithactivestructuralmodulation
AT panpanniu burstlaserdrivenplasmonicphotochemicalnanolithographyofsiliconwithactivestructuralmodulation
AT jiaogeng burstlaserdrivenplasmonicphotochemicalnanolithographyofsiliconwithactivestructuralmodulation
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