Retina‐Inspired X‐Ray Optoelectronic Synapse Using Amorphous Ga2O3 Thin Film
Abstract Machine vision techniques are widely applied for object identification in daily life and industrial production, where images are captured and processed by sensors, memories, and processing units sequentially. Neuromorphic optoelectronic synapses, as a preferable option to promote the effici...
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Wiley
2024-12-01
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| Series: | Advanced Science |
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| Online Access: | https://doi.org/10.1002/advs.202410761 |
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| author | Huili Liang Xiaoyan Tang Hang Shao Rui Zhu Shizhi Deng Xiaozhi Zhan Tao Zhu Jiwei Wang Jihua Zhang Guangyu Zhang Zengxia Mei |
| author_facet | Huili Liang Xiaoyan Tang Hang Shao Rui Zhu Shizhi Deng Xiaozhi Zhan Tao Zhu Jiwei Wang Jihua Zhang Guangyu Zhang Zengxia Mei |
| author_sort | Huili Liang |
| collection | DOAJ |
| description | Abstract Machine vision techniques are widely applied for object identification in daily life and industrial production, where images are captured and processed by sensors, memories, and processing units sequentially. Neuromorphic optoelectronic synapses, as a preferable option to promote the efficiency of image recognition, are hotly pursued in non‐ionizing radiation range, but rarely in ionizing radiation including X‐rays. Here, the study proposes an X‐ray optoelectronic synapse using amorphous Ga2O3 (a‐Ga2O3) thin film. Boosted by the interfacial VO2+ defects and its slow neutralization rate, the enhanced electron tunneling process at metal/a‐Ga2O3 interface produces remarkable X‐ray‐induced post‐synaptic current, contributing to a sensitivity of 20.5, 64.3, 164.1 µC mGy−1 cm−2 for the 1st, 5th, and 10th excitation periods, respectively. Further, a 64 × 64 imaging sensor is constructed on a commercial amorphous Si (a‐Si) thin film transistor (TFT) array. The image contrast can be apparently improved under a series of X‐ray pulses due to an outstanding long‐term plasticity of the single pixel, which is beneficial to the subsequent image recognition and classification based on artificial neural network. The merits of large‐scale production ability and good compatibility with modern microelectronic techniques belonging to amorphous oxide semiconductors may promote the development of neuro‐inspired X‐ray imagers and corresponding machine vision systems. |
| format | Article |
| id | doaj-art-2c86a68f82084a4fb8a8f15c36d81cc7 |
| institution | OA Journals |
| issn | 2198-3844 |
| language | English |
| publishDate | 2024-12-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advanced Science |
| spelling | doaj-art-2c86a68f82084a4fb8a8f15c36d81cc72025-08-20T02:01:00ZengWileyAdvanced Science2198-38442024-12-011148n/an/a10.1002/advs.202410761Retina‐Inspired X‐Ray Optoelectronic Synapse Using Amorphous Ga2O3 Thin FilmHuili Liang0Xiaoyan Tang1Hang Shao2Rui Zhu3Shizhi Deng4Xiaozhi Zhan5Tao Zhu6Jiwei Wang7Jihua Zhang8Guangyu Zhang9Zengxia Mei10Songshan Lake Materials Laboratory Dongguan Guangdong 523808 ChinaSongshan Lake Materials Laboratory Dongguan Guangdong 523808 ChinaSongshan Lake Materials Laboratory Dongguan Guangdong 523808 ChinaSongshan Lake Materials Laboratory Dongguan Guangdong 523808 ChinaSongshan Lake Materials Laboratory Dongguan Guangdong 523808 ChinaChina Spallation Neutron Source Dongguan Guangdong 523803 ChinaSongshan Lake Materials Laboratory Dongguan Guangdong 523808 ChinaCollege of Physics Liaoning University Shenyang 110036 ChinaSchool of Electronic Science and Engineering State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu 610054 ChinaSongshan Lake Materials Laboratory Dongguan Guangdong 523808 ChinaSongshan Lake Materials Laboratory Dongguan Guangdong 523808 ChinaAbstract Machine vision techniques are widely applied for object identification in daily life and industrial production, where images are captured and processed by sensors, memories, and processing units sequentially. Neuromorphic optoelectronic synapses, as a preferable option to promote the efficiency of image recognition, are hotly pursued in non‐ionizing radiation range, but rarely in ionizing radiation including X‐rays. Here, the study proposes an X‐ray optoelectronic synapse using amorphous Ga2O3 (a‐Ga2O3) thin film. Boosted by the interfacial VO2+ defects and its slow neutralization rate, the enhanced electron tunneling process at metal/a‐Ga2O3 interface produces remarkable X‐ray‐induced post‐synaptic current, contributing to a sensitivity of 20.5, 64.3, 164.1 µC mGy−1 cm−2 for the 1st, 5th, and 10th excitation periods, respectively. Further, a 64 × 64 imaging sensor is constructed on a commercial amorphous Si (a‐Si) thin film transistor (TFT) array. The image contrast can be apparently improved under a series of X‐ray pulses due to an outstanding long‐term plasticity of the single pixel, which is beneficial to the subsequent image recognition and classification based on artificial neural network. The merits of large‐scale production ability and good compatibility with modern microelectronic techniques belonging to amorphous oxide semiconductors may promote the development of neuro‐inspired X‐ray imagers and corresponding machine vision systems.https://doi.org/10.1002/advs.202410761amorphous Ga2O3oxygen vacancyX‐ray imagingX‐ray optoelectronic synapse |
| spellingShingle | Huili Liang Xiaoyan Tang Hang Shao Rui Zhu Shizhi Deng Xiaozhi Zhan Tao Zhu Jiwei Wang Jihua Zhang Guangyu Zhang Zengxia Mei Retina‐Inspired X‐Ray Optoelectronic Synapse Using Amorphous Ga2O3 Thin Film Advanced Science amorphous Ga2O3 oxygen vacancy X‐ray imaging X‐ray optoelectronic synapse |
| title | Retina‐Inspired X‐Ray Optoelectronic Synapse Using Amorphous Ga2O3 Thin Film |
| title_full | Retina‐Inspired X‐Ray Optoelectronic Synapse Using Amorphous Ga2O3 Thin Film |
| title_fullStr | Retina‐Inspired X‐Ray Optoelectronic Synapse Using Amorphous Ga2O3 Thin Film |
| title_full_unstemmed | Retina‐Inspired X‐Ray Optoelectronic Synapse Using Amorphous Ga2O3 Thin Film |
| title_short | Retina‐Inspired X‐Ray Optoelectronic Synapse Using Amorphous Ga2O3 Thin Film |
| title_sort | retina inspired x ray optoelectronic synapse using amorphous ga2o3 thin film |
| topic | amorphous Ga2O3 oxygen vacancy X‐ray imaging X‐ray optoelectronic synapse |
| url | https://doi.org/10.1002/advs.202410761 |
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