MOCVD ZnO/Screen Printed Ag Back Reflector for Flexible Thin Film Silicon Solar Cell Application

We have prepared Ag back electrode by screen printing technique and developed MOCVD ZnO/screen printed Ag back reflector for flexible thin film silicon solar cell application. A discontinuity and poor contact interface between the MOCVD ZnO and screen printed Ag layers caused poor open circuit volta...

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Main Authors: Amornrat Limmanee, Patipan Krudtad, Sasiwimon Songtrai, Suttinan Jaroensathainchok, Taweewat Krajangsang, Jaran Sritharathikhun, Kobsak Sriprapha
Format: Article
Language:English
Published: Wiley 2014-01-01
Series:International Journal of Photoenergy
Online Access:http://dx.doi.org/10.1155/2014/939040
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_version_ 1832558021825265664
author Amornrat Limmanee
Patipan Krudtad
Sasiwimon Songtrai
Suttinan Jaroensathainchok
Taweewat Krajangsang
Jaran Sritharathikhun
Kobsak Sriprapha
author_facet Amornrat Limmanee
Patipan Krudtad
Sasiwimon Songtrai
Suttinan Jaroensathainchok
Taweewat Krajangsang
Jaran Sritharathikhun
Kobsak Sriprapha
author_sort Amornrat Limmanee
collection DOAJ
description We have prepared Ag back electrode by screen printing technique and developed MOCVD ZnO/screen printed Ag back reflector for flexible thin film silicon solar cell application. A discontinuity and poor contact interface between the MOCVD ZnO and screen printed Ag layers caused poor open circuit voltage (Voc) and low fill factor (FF); however, an insertion of a thin sputtered ZnO layer at the interface could solve this problem. The n type hydrogenated amorphous silicon (a-Si:H) film is preferable for the deposition on the surface of MOCVD ZnO film rather than the microcrystalline film due to its less sensitivity to textured surface, and this allowed an improvement in the FF. The n-i-p flexible amorphous silicon solar cell using the MOCVD ZnO/screen printed Ag back reflector showed an initial efficiency of 6.2% with Voc=0.86 V, Jsc=12.4 mA/cm2, and FF = 0.58 (1 cm2). The identical quantum efficiency and comparable performance to the cells using conventional sputtered Ag back electrode have verified the potential of the MOCVD ZnO/screen printed Ag back reflector and possible opportunity to use the screen printed Ag thick film for flexible thin film silicon solar cells.
format Article
id doaj-art-2c83656d71224a32bbddf30d432aa267
institution Kabale University
issn 1110-662X
1687-529X
language English
publishDate 2014-01-01
publisher Wiley
record_format Article
series International Journal of Photoenergy
spelling doaj-art-2c83656d71224a32bbddf30d432aa2672025-02-03T01:33:26ZengWileyInternational Journal of Photoenergy1110-662X1687-529X2014-01-01201410.1155/2014/939040939040MOCVD ZnO/Screen Printed Ag Back Reflector for Flexible Thin Film Silicon Solar Cell ApplicationAmornrat Limmanee0Patipan Krudtad1Sasiwimon Songtrai2Suttinan Jaroensathainchok3Taweewat Krajangsang4Jaran Sritharathikhun5Kobsak Sriprapha6Solar Energy Technology Laboratory, National Electronics and Computer Technology Center (NECTEC), National Science and Technology Development Agency, 112 Thailand Science Park, Phahonyothin Road, Klong 1, Klong Luang, Pathumthani 12120, ThailandSolar Energy Technology Laboratory, National Electronics and Computer Technology Center (NECTEC), National Science and Technology Development Agency, 112 Thailand Science Park, Phahonyothin Road, Klong 1, Klong Luang, Pathumthani 12120, ThailandSolar Energy Technology Laboratory, National Electronics and Computer Technology Center (NECTEC), National Science and Technology Development Agency, 112 Thailand Science Park, Phahonyothin Road, Klong 1, Klong Luang, Pathumthani 12120, ThailandSolar Energy Technology Laboratory, National Electronics and Computer Technology Center (NECTEC), National Science and Technology Development Agency, 112 Thailand Science Park, Phahonyothin Road, Klong 1, Klong Luang, Pathumthani 12120, ThailandSolar Energy Technology Laboratory, National Electronics and Computer Technology Center (NECTEC), National Science and Technology Development Agency, 112 Thailand Science Park, Phahonyothin Road, Klong 1, Klong Luang, Pathumthani 12120, ThailandSolar Energy Technology Laboratory, National Electronics and Computer Technology Center (NECTEC), National Science and Technology Development Agency, 112 Thailand Science Park, Phahonyothin Road, Klong 1, Klong Luang, Pathumthani 12120, ThailandSolar Energy Technology Laboratory, National Electronics and Computer Technology Center (NECTEC), National Science and Technology Development Agency, 112 Thailand Science Park, Phahonyothin Road, Klong 1, Klong Luang, Pathumthani 12120, ThailandWe have prepared Ag back electrode by screen printing technique and developed MOCVD ZnO/screen printed Ag back reflector for flexible thin film silicon solar cell application. A discontinuity and poor contact interface between the MOCVD ZnO and screen printed Ag layers caused poor open circuit voltage (Voc) and low fill factor (FF); however, an insertion of a thin sputtered ZnO layer at the interface could solve this problem. The n type hydrogenated amorphous silicon (a-Si:H) film is preferable for the deposition on the surface of MOCVD ZnO film rather than the microcrystalline film due to its less sensitivity to textured surface, and this allowed an improvement in the FF. The n-i-p flexible amorphous silicon solar cell using the MOCVD ZnO/screen printed Ag back reflector showed an initial efficiency of 6.2% with Voc=0.86 V, Jsc=12.4 mA/cm2, and FF = 0.58 (1 cm2). The identical quantum efficiency and comparable performance to the cells using conventional sputtered Ag back electrode have verified the potential of the MOCVD ZnO/screen printed Ag back reflector and possible opportunity to use the screen printed Ag thick film for flexible thin film silicon solar cells.http://dx.doi.org/10.1155/2014/939040
spellingShingle Amornrat Limmanee
Patipan Krudtad
Sasiwimon Songtrai
Suttinan Jaroensathainchok
Taweewat Krajangsang
Jaran Sritharathikhun
Kobsak Sriprapha
MOCVD ZnO/Screen Printed Ag Back Reflector for Flexible Thin Film Silicon Solar Cell Application
International Journal of Photoenergy
title MOCVD ZnO/Screen Printed Ag Back Reflector for Flexible Thin Film Silicon Solar Cell Application
title_full MOCVD ZnO/Screen Printed Ag Back Reflector for Flexible Thin Film Silicon Solar Cell Application
title_fullStr MOCVD ZnO/Screen Printed Ag Back Reflector for Flexible Thin Film Silicon Solar Cell Application
title_full_unstemmed MOCVD ZnO/Screen Printed Ag Back Reflector for Flexible Thin Film Silicon Solar Cell Application
title_short MOCVD ZnO/Screen Printed Ag Back Reflector for Flexible Thin Film Silicon Solar Cell Application
title_sort mocvd zno screen printed ag back reflector for flexible thin film silicon solar cell application
url http://dx.doi.org/10.1155/2014/939040
work_keys_str_mv AT amornratlimmanee mocvdznoscreenprintedagbackreflectorforflexiblethinfilmsiliconsolarcellapplication
AT patipankrudtad mocvdznoscreenprintedagbackreflectorforflexiblethinfilmsiliconsolarcellapplication
AT sasiwimonsongtrai mocvdznoscreenprintedagbackreflectorforflexiblethinfilmsiliconsolarcellapplication
AT suttinanjaroensathainchok mocvdznoscreenprintedagbackreflectorforflexiblethinfilmsiliconsolarcellapplication
AT taweewatkrajangsang mocvdznoscreenprintedagbackreflectorforflexiblethinfilmsiliconsolarcellapplication
AT jaransritharathikhun mocvdznoscreenprintedagbackreflectorforflexiblethinfilmsiliconsolarcellapplication
AT kobsaksriprapha mocvdznoscreenprintedagbackreflectorforflexiblethinfilmsiliconsolarcellapplication