Enhanced energy storage in relaxor (1-x)Bi0.5Na0.5TiO3-xBaZryTi1-yO3 thin films by morphotropic phase boundary engineering

Abstract Perovskites at the crossover between ferroelectric and relaxor are often used to realize dielectric capacitors with high energy and power density and simultaneously good efficiency. Lead-free Bi0.5Na0.5TiO3 is gaining importance in showing an alternative to lead-based devices. Here we show...

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Main Authors: Herbert Kobald, Alexander M. Kobald, Ivana Panzic, Marco Deluca
Format: Article
Language:English
Published: Nature Portfolio 2025-01-01
Series:Communications Materials
Online Access:https://doi.org/10.1038/s43246-024-00730-x
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author Herbert Kobald
Alexander M. Kobald
Ivana Panzic
Marco Deluca
author_facet Herbert Kobald
Alexander M. Kobald
Ivana Panzic
Marco Deluca
author_sort Herbert Kobald
collection DOAJ
description Abstract Perovskites at the crossover between ferroelectric and relaxor are often used to realize dielectric capacitors with high energy and power density and simultaneously good efficiency. Lead-free Bi0.5Na0.5TiO3 is gaining importance in showing an alternative to lead-based devices. Here we show that (1-x)Bi0.5Na0.5TiO3 – xBaZr y Ti 1-y O3 (best: 0.94Bi0.5Na0.5TiO3 -0.06BaZr0.4Ti0.6O3) shows an increase of recoverable energy density and electric breakdown upon chemical substitution. In thin films derived from Chemical Solution Deposition, we observed that polarization peaks at the morphotropic phase boundary at x = 0.06. While Zr substitution results in reduced polarization, it enhances both efficiency and electric breakdown strength, ultimately doubling the recoverable energy density and the metallization interface by lowering surface roughness. Our dielectric capacitor shows <3% deviation of energy properties over 106 cycles. A virtual device model of a multilayer thin film capacitor (7.25 mJ recoverable energy) was used to compare its performance to already in use multilayer ceramic capacitors.
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issn 2662-4443
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spelling doaj-art-2be3be48727b415b804f9e492a0c7e882025-01-19T12:32:53ZengNature PortfolioCommunications Materials2662-44432025-01-016111210.1038/s43246-024-00730-xEnhanced energy storage in relaxor (1-x)Bi0.5Na0.5TiO3-xBaZryTi1-yO3 thin films by morphotropic phase boundary engineeringHerbert Kobald0Alexander M. Kobald1Ivana Panzic2Marco Deluca3Materials Center Leoben Forschung GmbHMaterials Center Leoben Forschung GmbHMaterials Center Leoben Forschung GmbHSilicon Austria Labs GmbHAbstract Perovskites at the crossover between ferroelectric and relaxor are often used to realize dielectric capacitors with high energy and power density and simultaneously good efficiency. Lead-free Bi0.5Na0.5TiO3 is gaining importance in showing an alternative to lead-based devices. Here we show that (1-x)Bi0.5Na0.5TiO3 – xBaZr y Ti 1-y O3 (best: 0.94Bi0.5Na0.5TiO3 -0.06BaZr0.4Ti0.6O3) shows an increase of recoverable energy density and electric breakdown upon chemical substitution. In thin films derived from Chemical Solution Deposition, we observed that polarization peaks at the morphotropic phase boundary at x = 0.06. While Zr substitution results in reduced polarization, it enhances both efficiency and electric breakdown strength, ultimately doubling the recoverable energy density and the metallization interface by lowering surface roughness. Our dielectric capacitor shows <3% deviation of energy properties over 106 cycles. A virtual device model of a multilayer thin film capacitor (7.25 mJ recoverable energy) was used to compare its performance to already in use multilayer ceramic capacitors.https://doi.org/10.1038/s43246-024-00730-x
spellingShingle Herbert Kobald
Alexander M. Kobald
Ivana Panzic
Marco Deluca
Enhanced energy storage in relaxor (1-x)Bi0.5Na0.5TiO3-xBaZryTi1-yO3 thin films by morphotropic phase boundary engineering
Communications Materials
title Enhanced energy storage in relaxor (1-x)Bi0.5Na0.5TiO3-xBaZryTi1-yO3 thin films by morphotropic phase boundary engineering
title_full Enhanced energy storage in relaxor (1-x)Bi0.5Na0.5TiO3-xBaZryTi1-yO3 thin films by morphotropic phase boundary engineering
title_fullStr Enhanced energy storage in relaxor (1-x)Bi0.5Na0.5TiO3-xBaZryTi1-yO3 thin films by morphotropic phase boundary engineering
title_full_unstemmed Enhanced energy storage in relaxor (1-x)Bi0.5Na0.5TiO3-xBaZryTi1-yO3 thin films by morphotropic phase boundary engineering
title_short Enhanced energy storage in relaxor (1-x)Bi0.5Na0.5TiO3-xBaZryTi1-yO3 thin films by morphotropic phase boundary engineering
title_sort enhanced energy storage in relaxor 1 x bi0 5na0 5tio3 xbazryti1 yo3 thin films by morphotropic phase boundary engineering
url https://doi.org/10.1038/s43246-024-00730-x
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