Electrical Characterization of Si/ZnO Nanorod PN Heterojunction Diode
The electrical characterization of p-Silicon (Si) and n-Zinc oxide (ZnO) nanorod heterojunction diode has been performed. ZnO nanorods were grown on p-Silicon substrate by the aqueous chemical growth (ACG) method. The SEM image revealed high density, vertically aligned hexagonal ZnO nanorods with an...
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Wiley
2020-01-01
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Series: | Advances in Condensed Matter Physics |
Online Access: | http://dx.doi.org/10.1155/2020/6410573 |
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author | Sadia Muniza Faraz Wakeel Shah Naveed Ul Hassan Alvi Omer Nur Qamar Ul Wahab |
author_facet | Sadia Muniza Faraz Wakeel Shah Naveed Ul Hassan Alvi Omer Nur Qamar Ul Wahab |
author_sort | Sadia Muniza Faraz |
collection | DOAJ |
description | The electrical characterization of p-Silicon (Si) and n-Zinc oxide (ZnO) nanorod heterojunction diode has been performed. ZnO nanorods were grown on p-Silicon substrate by the aqueous chemical growth (ACG) method. The SEM image revealed high density, vertically aligned hexagonal ZnO nanorods with an average height of about 1.2 μm. Electrical characterization of n-ZnO nanorods/p-Si heterojunction diode was done by current-voltage (I-V), capacitance-voltage (C-V), and conductance-voltage (G-V) measurements at room temperature. The heterojunction exhibited good electrical characteristics with diode-like rectifying behaviour with an ideality factor of 2.7, rectification factor of 52, and barrier height of 0.7 V. Energy band (EB) structure has been studied to investigate the factors responsible for small rectification factor. In order to investigate nonidealities, series resistance and distribution of interface state density (NSS) below the conduction band (CB) were extracted with the help of I-V and C-V and G-V measurements. The series resistances were found to be 0.70, 0.73, and 0.75 KΩ, and density distribution interface states from 8.38 × 1012 to 5.83 × 1011 eV−1 cm−2 were obtained from 0.01 eV to 0.55 eV below the conduction band. |
format | Article |
id | doaj-art-2a9b5204e24b4008ba0d23cec65e88b8 |
institution | Kabale University |
issn | 1687-8108 1687-8124 |
language | English |
publishDate | 2020-01-01 |
publisher | Wiley |
record_format | Article |
series | Advances in Condensed Matter Physics |
spelling | doaj-art-2a9b5204e24b4008ba0d23cec65e88b82025-02-03T01:04:20ZengWileyAdvances in Condensed Matter Physics1687-81081687-81242020-01-01202010.1155/2020/64105736410573Electrical Characterization of Si/ZnO Nanorod PN Heterojunction DiodeSadia Muniza Faraz0Wakeel Shah1Naveed Ul Hassan Alvi2Omer Nur3Qamar Ul Wahab4Electronic Design Center, Department of Electronic Engineering, NED University of Engineering and Technology, Karachi-75270, PakistanElectronic Design Center, Department of Electronic Engineering, NED University of Engineering and Technology, Karachi-75270, PakistanLaboratory of Organic Electronics, Department of Science and Technology, Linköping University, Linköping S-60174, SwedenDepartment of Science and Technology (ITN), Faculty of Science & Engineering, Linkoping University, Linköping, SwedenUniversity of Technology, Nowshera-24100, PakistanThe electrical characterization of p-Silicon (Si) and n-Zinc oxide (ZnO) nanorod heterojunction diode has been performed. ZnO nanorods were grown on p-Silicon substrate by the aqueous chemical growth (ACG) method. The SEM image revealed high density, vertically aligned hexagonal ZnO nanorods with an average height of about 1.2 μm. Electrical characterization of n-ZnO nanorods/p-Si heterojunction diode was done by current-voltage (I-V), capacitance-voltage (C-V), and conductance-voltage (G-V) measurements at room temperature. The heterojunction exhibited good electrical characteristics with diode-like rectifying behaviour with an ideality factor of 2.7, rectification factor of 52, and barrier height of 0.7 V. Energy band (EB) structure has been studied to investigate the factors responsible for small rectification factor. In order to investigate nonidealities, series resistance and distribution of interface state density (NSS) below the conduction band (CB) were extracted with the help of I-V and C-V and G-V measurements. The series resistances were found to be 0.70, 0.73, and 0.75 KΩ, and density distribution interface states from 8.38 × 1012 to 5.83 × 1011 eV−1 cm−2 were obtained from 0.01 eV to 0.55 eV below the conduction band.http://dx.doi.org/10.1155/2020/6410573 |
spellingShingle | Sadia Muniza Faraz Wakeel Shah Naveed Ul Hassan Alvi Omer Nur Qamar Ul Wahab Electrical Characterization of Si/ZnO Nanorod PN Heterojunction Diode Advances in Condensed Matter Physics |
title | Electrical Characterization of Si/ZnO Nanorod PN Heterojunction Diode |
title_full | Electrical Characterization of Si/ZnO Nanorod PN Heterojunction Diode |
title_fullStr | Electrical Characterization of Si/ZnO Nanorod PN Heterojunction Diode |
title_full_unstemmed | Electrical Characterization of Si/ZnO Nanorod PN Heterojunction Diode |
title_short | Electrical Characterization of Si/ZnO Nanorod PN Heterojunction Diode |
title_sort | electrical characterization of si zno nanorod pn heterojunction diode |
url | http://dx.doi.org/10.1155/2020/6410573 |
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