Electrical Characterization of Si/ZnO Nanorod PN Heterojunction Diode

The electrical characterization of p-Silicon (Si) and n-Zinc oxide (ZnO) nanorod heterojunction diode has been performed. ZnO nanorods were grown on p-Silicon substrate by the aqueous chemical growth (ACG) method. The SEM image revealed high density, vertically aligned hexagonal ZnO nanorods with an...

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Main Authors: Sadia Muniza Faraz, Wakeel Shah, Naveed Ul Hassan Alvi, Omer Nur, Qamar Ul Wahab
Format: Article
Language:English
Published: Wiley 2020-01-01
Series:Advances in Condensed Matter Physics
Online Access:http://dx.doi.org/10.1155/2020/6410573
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author Sadia Muniza Faraz
Wakeel Shah
Naveed Ul Hassan Alvi
Omer Nur
Qamar Ul Wahab
author_facet Sadia Muniza Faraz
Wakeel Shah
Naveed Ul Hassan Alvi
Omer Nur
Qamar Ul Wahab
author_sort Sadia Muniza Faraz
collection DOAJ
description The electrical characterization of p-Silicon (Si) and n-Zinc oxide (ZnO) nanorod heterojunction diode has been performed. ZnO nanorods were grown on p-Silicon substrate by the aqueous chemical growth (ACG) method. The SEM image revealed high density, vertically aligned hexagonal ZnO nanorods with an average height of about 1.2 μm. Electrical characterization of n-ZnO nanorods/p-Si heterojunction diode was done by current-voltage (I-V), capacitance-voltage (C-V), and conductance-voltage (G-V) measurements at room temperature. The heterojunction exhibited good electrical characteristics with diode-like rectifying behaviour with an ideality factor of 2.7, rectification factor of 52, and barrier height of 0.7 V. Energy band (EB) structure has been studied to investigate the factors responsible for small rectification factor. In order to investigate nonidealities, series resistance and distribution of interface state density (NSS) below the conduction band (CB) were extracted with the help of I-V and C-V and G-V measurements. The series resistances were found to be 0.70, 0.73, and 0.75 KΩ, and density distribution interface states from 8.38 × 1012 to 5.83 × 1011 eV−1 cm−2 were obtained from 0.01 eV to 0.55 eV below the conduction band.
format Article
id doaj-art-2a9b5204e24b4008ba0d23cec65e88b8
institution Kabale University
issn 1687-8108
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language English
publishDate 2020-01-01
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series Advances in Condensed Matter Physics
spelling doaj-art-2a9b5204e24b4008ba0d23cec65e88b82025-02-03T01:04:20ZengWileyAdvances in Condensed Matter Physics1687-81081687-81242020-01-01202010.1155/2020/64105736410573Electrical Characterization of Si/ZnO Nanorod PN Heterojunction DiodeSadia Muniza Faraz0Wakeel Shah1Naveed Ul Hassan Alvi2Omer Nur3Qamar Ul Wahab4Electronic Design Center, Department of Electronic Engineering, NED University of Engineering and Technology, Karachi-75270, PakistanElectronic Design Center, Department of Electronic Engineering, NED University of Engineering and Technology, Karachi-75270, PakistanLaboratory of Organic Electronics, Department of Science and Technology, Linköping University, Linköping S-60174, SwedenDepartment of Science and Technology (ITN), Faculty of Science & Engineering, Linkoping University, Linköping, SwedenUniversity of Technology, Nowshera-24100, PakistanThe electrical characterization of p-Silicon (Si) and n-Zinc oxide (ZnO) nanorod heterojunction diode has been performed. ZnO nanorods were grown on p-Silicon substrate by the aqueous chemical growth (ACG) method. The SEM image revealed high density, vertically aligned hexagonal ZnO nanorods with an average height of about 1.2 μm. Electrical characterization of n-ZnO nanorods/p-Si heterojunction diode was done by current-voltage (I-V), capacitance-voltage (C-V), and conductance-voltage (G-V) measurements at room temperature. The heterojunction exhibited good electrical characteristics with diode-like rectifying behaviour with an ideality factor of 2.7, rectification factor of 52, and barrier height of 0.7 V. Energy band (EB) structure has been studied to investigate the factors responsible for small rectification factor. In order to investigate nonidealities, series resistance and distribution of interface state density (NSS) below the conduction band (CB) were extracted with the help of I-V and C-V and G-V measurements. The series resistances were found to be 0.70, 0.73, and 0.75 KΩ, and density distribution interface states from 8.38 × 1012 to 5.83 × 1011 eV−1 cm−2 were obtained from 0.01 eV to 0.55 eV below the conduction band.http://dx.doi.org/10.1155/2020/6410573
spellingShingle Sadia Muniza Faraz
Wakeel Shah
Naveed Ul Hassan Alvi
Omer Nur
Qamar Ul Wahab
Electrical Characterization of Si/ZnO Nanorod PN Heterojunction Diode
Advances in Condensed Matter Physics
title Electrical Characterization of Si/ZnO Nanorod PN Heterojunction Diode
title_full Electrical Characterization of Si/ZnO Nanorod PN Heterojunction Diode
title_fullStr Electrical Characterization of Si/ZnO Nanorod PN Heterojunction Diode
title_full_unstemmed Electrical Characterization of Si/ZnO Nanorod PN Heterojunction Diode
title_short Electrical Characterization of Si/ZnO Nanorod PN Heterojunction Diode
title_sort electrical characterization of si zno nanorod pn heterojunction diode
url http://dx.doi.org/10.1155/2020/6410573
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AT naveedulhassanalvi electricalcharacterizationofsiznonanorodpnheterojunctiondiode
AT omernur electricalcharacterizationofsiznonanorodpnheterojunctiondiode
AT qamarulwahab electricalcharacterizationofsiznonanorodpnheterojunctiondiode