The Effect of Annealing on the Structural and Optical Properties of Titanium Dioxide Films Deposited by Electron Beam Assisted PVD
Titanium dioxide thin films were deposited on crystalline silicon substrates by electron beam physical vapor deposition. The deposition was performed under vacuum ranging from 10−5 to 10−6 Torr without process gases, resulting in homogeneous TiO2-x layers with a thickness of around 100 nm. Samples w...
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| Format: | Article |
| Language: | English |
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Wiley
2013-01-01
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| Series: | Advances in Materials Science and Engineering |
| Online Access: | http://dx.doi.org/10.1155/2013/574738 |
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| author | Yaser M. Abdulraheem Sahar Ghoraishi Lidia Arockia-Thai Suji K. Zachariah Moustafa Ghannam |
| author_facet | Yaser M. Abdulraheem Sahar Ghoraishi Lidia Arockia-Thai Suji K. Zachariah Moustafa Ghannam |
| author_sort | Yaser M. Abdulraheem |
| collection | DOAJ |
| description | Titanium dioxide thin films were deposited on crystalline silicon substrates by electron beam physical vapor deposition. The deposition was performed under vacuum ranging from 10−5 to 10−6 Torr without process gases, resulting in homogeneous TiO2-x layers with a thickness of around 100 nm. Samples were then annealed at high temperatures ranging from 500°C to 800°C for 4 hours under nitrogen, and their structural and optical properties along with their chemical structure were characterized before and after annealing. The chemical and structural characterization revealed a substoichiometric TiO2-x film with oxygen vacancies, voids, and an interface oxide layer. It was found from X-ray diffraction that the deposited films were amorphous and crystallization to anatase phase occurred for annealed samples and was more pronounced for annealing temperatures above 700°C. The refractive index obtained through spectroscopic ellipsometry ranged between 2.09 and 2.37 in the wavelength range, 900 nm to 400 nm for the as-deposited sample, and jumped to the range between 2.23 and 2.65 for samples annealed at 800°C. The minimum surface reflectance changed from around 0.6% for the as-deposited samples to 2.5% for the samples annealed at 800°C. |
| format | Article |
| id | doaj-art-2a60bd05c3eb4487904a113ba4188dfe |
| institution | Kabale University |
| issn | 1687-8434 1687-8442 |
| language | English |
| publishDate | 2013-01-01 |
| publisher | Wiley |
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| series | Advances in Materials Science and Engineering |
| spelling | doaj-art-2a60bd05c3eb4487904a113ba4188dfe2025-02-03T05:44:00ZengWileyAdvances in Materials Science and Engineering1687-84341687-84422013-01-01201310.1155/2013/574738574738The Effect of Annealing on the Structural and Optical Properties of Titanium Dioxide Films Deposited by Electron Beam Assisted PVDYaser M. Abdulraheem0Sahar Ghoraishi1Lidia Arockia-Thai2Suji K. Zachariah3Moustafa Ghannam4Electrical Engineering Department, College of Engineering & Petroleum, Kuwait University, P.O. Box 5969, Safat 13060, KuwaitKuwait University Nanotechnology Research Facility, College of Engineering & Petroleum, Kuwait University, P.O. Box 5969, Safat 13060, KuwaitKuwait University Nanotechnology Research Facility, College of Engineering & Petroleum, Kuwait University, P.O. Box 5969, Safat 13060, KuwaitKuwait University Semiconductor Research Facility, College of Engineering & Petroleum, Kuwait University, P.O. Box 5969, Safat 13060, KuwaitElectrical Engineering Department, College of Engineering & Petroleum, Kuwait University, P.O. Box 5969, Safat 13060, KuwaitTitanium dioxide thin films were deposited on crystalline silicon substrates by electron beam physical vapor deposition. The deposition was performed under vacuum ranging from 10−5 to 10−6 Torr without process gases, resulting in homogeneous TiO2-x layers with a thickness of around 100 nm. Samples were then annealed at high temperatures ranging from 500°C to 800°C for 4 hours under nitrogen, and their structural and optical properties along with their chemical structure were characterized before and after annealing. The chemical and structural characterization revealed a substoichiometric TiO2-x film with oxygen vacancies, voids, and an interface oxide layer. It was found from X-ray diffraction that the deposited films were amorphous and crystallization to anatase phase occurred for annealed samples and was more pronounced for annealing temperatures above 700°C. The refractive index obtained through spectroscopic ellipsometry ranged between 2.09 and 2.37 in the wavelength range, 900 nm to 400 nm for the as-deposited sample, and jumped to the range between 2.23 and 2.65 for samples annealed at 800°C. The minimum surface reflectance changed from around 0.6% for the as-deposited samples to 2.5% for the samples annealed at 800°C.http://dx.doi.org/10.1155/2013/574738 |
| spellingShingle | Yaser M. Abdulraheem Sahar Ghoraishi Lidia Arockia-Thai Suji K. Zachariah Moustafa Ghannam The Effect of Annealing on the Structural and Optical Properties of Titanium Dioxide Films Deposited by Electron Beam Assisted PVD Advances in Materials Science and Engineering |
| title | The Effect of Annealing on the Structural and Optical Properties of Titanium Dioxide Films Deposited by Electron Beam Assisted PVD |
| title_full | The Effect of Annealing on the Structural and Optical Properties of Titanium Dioxide Films Deposited by Electron Beam Assisted PVD |
| title_fullStr | The Effect of Annealing on the Structural and Optical Properties of Titanium Dioxide Films Deposited by Electron Beam Assisted PVD |
| title_full_unstemmed | The Effect of Annealing on the Structural and Optical Properties of Titanium Dioxide Films Deposited by Electron Beam Assisted PVD |
| title_short | The Effect of Annealing on the Structural and Optical Properties of Titanium Dioxide Films Deposited by Electron Beam Assisted PVD |
| title_sort | effect of annealing on the structural and optical properties of titanium dioxide films deposited by electron beam assisted pvd |
| url | http://dx.doi.org/10.1155/2013/574738 |
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