A Simple Method to Differentiate between Free-Carrier Recombination and Trapping Centers in the Bandgap of the p-Type Semiconductor
In this research, the ranges of the localized states in which the recombination and the trapping rates of free carriers dominate the entire transition rates of free carriers in the bandgap of the p-type semiconductor are described. Applying the Shockley–Read–Hall model to a p-type material under a l...
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| Main Author: | |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2021-01-01
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| Series: | Advances in Materials Science and Engineering |
| Online Access: | http://dx.doi.org/10.1155/2021/5568880 |
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