Noise Performance of Heterojunction DDR MITATT Devices Based on at W-Band
Noise performance of different structures of anisotype heterojunction double-drift region (DDR) mixed tunneling and avalanche transit time (MITATT) devices has been studied. The devices are designed for operation at millimeter-wave W-band frequencies. A simulation model has been developed to study...
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| Format: | Article |
| Language: | English |
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Wiley
2013-01-01
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| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1155/2013/720191 |
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| author | Suranjana Banerjee Aritra Acharyya J. P. Banerjee |
| author_facet | Suranjana Banerjee Aritra Acharyya J. P. Banerjee |
| author_sort | Suranjana Banerjee |
| collection | DOAJ |
| description | Noise performance of different structures of
anisotype heterojunction double-drift region (DDR) mixed tunneling and avalanche transit time (MITATT) devices has been studied. The devices are designed for operation at millimeter-wave W-band frequencies. A simulation model has been developed to study the noise spectral density and noise measure of the device. Two different mole fractions and of Ge and corresponding four types of device structure are considered for the simulation. The results show that the -Si heterojunction DDR structure of MITATT device excels all other structures as regards noise spectral density ( sec) and noise measure (33.09 dB) as well as millimeter-wave properties such as DC-to-RF conversion efficiency (20.15%) and CW power output (773.29 mW). |
| format | Article |
| id | doaj-art-292fd2a1f5cd4c89b01f1d650851282d |
| institution | Kabale University |
| issn | 0882-7516 1563-5031 |
| language | English |
| publishDate | 2013-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Active and Passive Electronic Components |
| spelling | doaj-art-292fd2a1f5cd4c89b01f1d650851282d2025-02-03T06:42:28ZengWileyActive and Passive Electronic Components0882-75161563-50312013-01-01201310.1155/2013/720191720191Noise Performance of Heterojunction DDR MITATT Devices Based on at W-BandSuranjana Banerjee0Aritra Acharyya1J. P. Banerjee2Academy of Technology, West Bengal University of Technology, Adisaptagram, Hooghly, West Bengal 712121, IndiaInstitute of Radio Physics and Electronics, University of Calcutta, 92 APC Road, Kolkata, West Bengal 700009, IndiaInstitute of Radio Physics and Electronics, University of Calcutta, 92 APC Road, Kolkata, West Bengal 700009, IndiaNoise performance of different structures of anisotype heterojunction double-drift region (DDR) mixed tunneling and avalanche transit time (MITATT) devices has been studied. The devices are designed for operation at millimeter-wave W-band frequencies. A simulation model has been developed to study the noise spectral density and noise measure of the device. Two different mole fractions and of Ge and corresponding four types of device structure are considered for the simulation. The results show that the -Si heterojunction DDR structure of MITATT device excels all other structures as regards noise spectral density ( sec) and noise measure (33.09 dB) as well as millimeter-wave properties such as DC-to-RF conversion efficiency (20.15%) and CW power output (773.29 mW).http://dx.doi.org/10.1155/2013/720191 |
| spellingShingle | Suranjana Banerjee Aritra Acharyya J. P. Banerjee Noise Performance of Heterojunction DDR MITATT Devices Based on at W-Band Active and Passive Electronic Components |
| title | Noise Performance of Heterojunction DDR MITATT Devices Based on at W-Band |
| title_full | Noise Performance of Heterojunction DDR MITATT Devices Based on at W-Band |
| title_fullStr | Noise Performance of Heterojunction DDR MITATT Devices Based on at W-Band |
| title_full_unstemmed | Noise Performance of Heterojunction DDR MITATT Devices Based on at W-Band |
| title_short | Noise Performance of Heterojunction DDR MITATT Devices Based on at W-Band |
| title_sort | noise performance of heterojunction ddr mitatt devices based on at w band |
| url | http://dx.doi.org/10.1155/2013/720191 |
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