On Cluster Calculation for Amorphous Tetrahedrally Bonded Semiconductors
This article consists of an approach to the calculation of the density of valence states in tetrahedrally bonded amorphous semiconductors and, on the other hand, the paper contains theoretical considerations on electronic spectra related to the results obtained by the authors concerning cluster calc...
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Format: | Article |
Language: | English |
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Wiley
1997-01-01
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Series: | Active and Passive Electronic Components |
Online Access: | http://dx.doi.org/10.1155/1997/15626 |
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author | M. A. Grado-Caffaro M. Grado-Caffaro |
author_facet | M. A. Grado-Caffaro M. Grado-Caffaro |
author_sort | M. A. Grado-Caffaro |
collection | DOAJ |
description | This article consists of an approach to the calculation of the density of valence states in tetrahedrally
bonded amorphous semiconductors and, on the other hand, the paper contains theoretical
considerations on electronic spectra related to the results obtained by the authors concerning
cluster calculation. The exposition is centered on III–V compounds. Moreover,
operational methods are used to perform certain computations related to the previous subjects. |
format | Article |
id | doaj-art-292f7d67891a4e6c8376a150ef7f5b30 |
institution | Kabale University |
issn | 0882-7516 1563-5031 |
language | English |
publishDate | 1997-01-01 |
publisher | Wiley |
record_format | Article |
series | Active and Passive Electronic Components |
spelling | doaj-art-292f7d67891a4e6c8376a150ef7f5b302025-02-03T06:48:38ZengWileyActive and Passive Electronic Components0882-75161563-50311997-01-012011510.1155/1997/15626On Cluster Calculation for Amorphous Tetrahedrally Bonded SemiconductorsM. A. Grado-Caffaro0M. Grado-Caffaro1Member of the Academy of Sciences of New York, Julio Palacios 11, 9–B, Madrid 28029, SpainMember of the Academy of Sciences of New York, Julio Palacios 11, 9–B, Madrid 28029, SpainThis article consists of an approach to the calculation of the density of valence states in tetrahedrally bonded amorphous semiconductors and, on the other hand, the paper contains theoretical considerations on electronic spectra related to the results obtained by the authors concerning cluster calculation. The exposition is centered on III–V compounds. Moreover, operational methods are used to perform certain computations related to the previous subjects.http://dx.doi.org/10.1155/1997/15626 |
spellingShingle | M. A. Grado-Caffaro M. Grado-Caffaro On Cluster Calculation for Amorphous Tetrahedrally Bonded Semiconductors Active and Passive Electronic Components |
title | On Cluster Calculation for Amorphous Tetrahedrally Bonded
Semiconductors |
title_full | On Cluster Calculation for Amorphous Tetrahedrally Bonded
Semiconductors |
title_fullStr | On Cluster Calculation for Amorphous Tetrahedrally Bonded
Semiconductors |
title_full_unstemmed | On Cluster Calculation for Amorphous Tetrahedrally Bonded
Semiconductors |
title_short | On Cluster Calculation for Amorphous Tetrahedrally Bonded
Semiconductors |
title_sort | on cluster calculation for amorphous tetrahedrally bonded semiconductors |
url | http://dx.doi.org/10.1155/1997/15626 |
work_keys_str_mv | AT magradocaffaro onclustercalculationforamorphoustetrahedrallybondedsemiconductors AT mgradocaffaro onclustercalculationforamorphoustetrahedrallybondedsemiconductors |