On Cluster Calculation for Amorphous Tetrahedrally Bonded Semiconductors

This article consists of an approach to the calculation of the density of valence states in tetrahedrally bonded amorphous semiconductors and, on the other hand, the paper contains theoretical considerations on electronic spectra related to the results obtained by the authors concerning cluster calc...

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Main Authors: M. A. Grado-Caffaro, M. Grado-Caffaro
Format: Article
Language:English
Published: Wiley 1997-01-01
Series:Active and Passive Electronic Components
Online Access:http://dx.doi.org/10.1155/1997/15626
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author M. A. Grado-Caffaro
M. Grado-Caffaro
author_facet M. A. Grado-Caffaro
M. Grado-Caffaro
author_sort M. A. Grado-Caffaro
collection DOAJ
description This article consists of an approach to the calculation of the density of valence states in tetrahedrally bonded amorphous semiconductors and, on the other hand, the paper contains theoretical considerations on electronic spectra related to the results obtained by the authors concerning cluster calculation. The exposition is centered on III–V compounds. Moreover, operational methods are used to perform certain computations related to the previous subjects.
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institution Kabale University
issn 0882-7516
1563-5031
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publishDate 1997-01-01
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record_format Article
series Active and Passive Electronic Components
spelling doaj-art-292f7d67891a4e6c8376a150ef7f5b302025-02-03T06:48:38ZengWileyActive and Passive Electronic Components0882-75161563-50311997-01-012011510.1155/1997/15626On Cluster Calculation for Amorphous Tetrahedrally Bonded SemiconductorsM. A. Grado-Caffaro0M. Grado-Caffaro1Member of the Academy of Sciences of New York, Julio Palacios 11, 9–B, Madrid 28029, SpainMember of the Academy of Sciences of New York, Julio Palacios 11, 9–B, Madrid 28029, SpainThis article consists of an approach to the calculation of the density of valence states in tetrahedrally bonded amorphous semiconductors and, on the other hand, the paper contains theoretical considerations on electronic spectra related to the results obtained by the authors concerning cluster calculation. The exposition is centered on III–V compounds. Moreover, operational methods are used to perform certain computations related to the previous subjects.http://dx.doi.org/10.1155/1997/15626
spellingShingle M. A. Grado-Caffaro
M. Grado-Caffaro
On Cluster Calculation for Amorphous Tetrahedrally Bonded Semiconductors
Active and Passive Electronic Components
title On Cluster Calculation for Amorphous Tetrahedrally Bonded Semiconductors
title_full On Cluster Calculation for Amorphous Tetrahedrally Bonded Semiconductors
title_fullStr On Cluster Calculation for Amorphous Tetrahedrally Bonded Semiconductors
title_full_unstemmed On Cluster Calculation for Amorphous Tetrahedrally Bonded Semiconductors
title_short On Cluster Calculation for Amorphous Tetrahedrally Bonded Semiconductors
title_sort on cluster calculation for amorphous tetrahedrally bonded semiconductors
url http://dx.doi.org/10.1155/1997/15626
work_keys_str_mv AT magradocaffaro onclustercalculationforamorphoustetrahedrallybondedsemiconductors
AT mgradocaffaro onclustercalculationforamorphoustetrahedrallybondedsemiconductors