Enhanced sensing capabilities of UV–visible p-n and p-i-n photodiodes using unique layer and contact configurations
This paper focuses on the ultraviolet–visible (UV–vis) light response of the p-n and p-i-n vertical self-powered photodiodes (PDs) based on p-PMItz/n-Si, p-PMItz/n-4HSiC and p-PMItz/i-SiO2/n-Si Heterojunctions. The PDs, referred to as Device A-B-C-D-E and F according to the modified structures, were...
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Elsevier
2025-02-01
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| Series: | Engineering Science and Technology, an International Journal |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S2215098625000308 |
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| author | Ahmed Ali Alarabi Osman Çiçek Hasan Makara Fatih Ünal Merve Zurnacı Şemsettin Altındal |
| author_facet | Ahmed Ali Alarabi Osman Çiçek Hasan Makara Fatih Ünal Merve Zurnacı Şemsettin Altındal |
| author_sort | Ahmed Ali Alarabi |
| collection | DOAJ |
| description | This paper focuses on the ultraviolet–visible (UV–vis) light response of the p-n and p-i-n vertical self-powered photodiodes (PDs) based on p-PMItz/n-Si, p-PMItz/n-4HSiC and p-PMItz/i-SiO2/n-Si Heterojunctions. The PDs, referred to as Device A-B-C-D-E and F according to the modified structures, were produced to increase the sensing capacity using distinct anode contacts. The basic fundamental parameters were recorded using the I-V data of PDs with thermionic emission theory (TE) and Ohm’s law. The results showed that, in line with the literature, the potential barrier height (ФBo) decreased, and the ideality factor (n) increased with increasing illumination intensity. Additionally, the voltage-dependent series resistances (Rs) of PDs in the dark and under different UV–vis light intensities were determined using Ohm’s laws. It was recorded that Rs decreased as light intensity increased. On the other hand, the photosensitivity properties of PDs in UV–vis intensities depending on the voltage were investigated. The photosensitivity of the fabricated Device B reached a maximum of 4.05x104 at short circuit voltage (Vsc = 0 V). In contrast, when self-powered, the short-circuit voltage (Voc) showed better photosensitivity (with a minimum of 0.058). Additionally, the specific detectivity (D*) and the responsivity (R) of the PDs were calculated. According to the literature, the R and D* decreased with increasing power density at zero-bias voltage. Also, the R of Device B is higher, and D* is lower than other devices. The linear dynamic range (LDR) of Device A reaches ∼ 92 dB with maximum (Vbias = 0 V) while the dark current is 0.038 nA with minimum (in self-powered mode). Device B is considered suitable for the PDs (in self-powered mode) among other devices. |
| format | Article |
| id | doaj-art-271effbcb2a4434ebf321465e66f8c7f |
| institution | Kabale University |
| issn | 2215-0986 |
| language | English |
| publishDate | 2025-02-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Engineering Science and Technology, an International Journal |
| spelling | doaj-art-271effbcb2a4434ebf321465e66f8c7f2025-02-06T05:11:54ZengElsevierEngineering Science and Technology, an International Journal2215-09862025-02-0162101975Enhanced sensing capabilities of UV–visible p-n and p-i-n photodiodes using unique layer and contact configurationsAhmed Ali Alarabi0Osman Çiçek1Hasan Makara2Fatih Ünal3Merve Zurnacı4Şemsettin Altındal5Department of Metallurgy and Materials Engineering, Kastamonu University 37100 Kastamonu, TurkeyDepartment of Electrical‑Electronic Engineering, Faculty of Engineering and Architecture, Kastamonu University 37150 Kastamonu, Turkey; Corresponding author.Department of Metallurgy and Materials Engineering, Kastamonu University 37100 Kastamonu, TurkeyCentral Research Laboratory, Application and Research Center, Giresun University, Giresun, TurkeyCentral Research Laboratory, Kastamonu University, Kastamonu, TurkeyDepartment of Physics, Faculty of Sciences, Gazi University 06560 Ankara, TurkeyThis paper focuses on the ultraviolet–visible (UV–vis) light response of the p-n and p-i-n vertical self-powered photodiodes (PDs) based on p-PMItz/n-Si, p-PMItz/n-4HSiC and p-PMItz/i-SiO2/n-Si Heterojunctions. The PDs, referred to as Device A-B-C-D-E and F according to the modified structures, were produced to increase the sensing capacity using distinct anode contacts. The basic fundamental parameters were recorded using the I-V data of PDs with thermionic emission theory (TE) and Ohm’s law. The results showed that, in line with the literature, the potential barrier height (ФBo) decreased, and the ideality factor (n) increased with increasing illumination intensity. Additionally, the voltage-dependent series resistances (Rs) of PDs in the dark and under different UV–vis light intensities were determined using Ohm’s laws. It was recorded that Rs decreased as light intensity increased. On the other hand, the photosensitivity properties of PDs in UV–vis intensities depending on the voltage were investigated. The photosensitivity of the fabricated Device B reached a maximum of 4.05x104 at short circuit voltage (Vsc = 0 V). In contrast, when self-powered, the short-circuit voltage (Voc) showed better photosensitivity (with a minimum of 0.058). Additionally, the specific detectivity (D*) and the responsivity (R) of the PDs were calculated. According to the literature, the R and D* decreased with increasing power density at zero-bias voltage. Also, the R of Device B is higher, and D* is lower than other devices. The linear dynamic range (LDR) of Device A reaches ∼ 92 dB with maximum (Vbias = 0 V) while the dark current is 0.038 nA with minimum (in self-powered mode). Device B is considered suitable for the PDs (in self-powered mode) among other devices.http://www.sciencedirect.com/science/article/pii/S2215098625000308PhotodiodesOrganic semiconductorSelf-powered modePhotosensitivityElectronic Properties |
| spellingShingle | Ahmed Ali Alarabi Osman Çiçek Hasan Makara Fatih Ünal Merve Zurnacı Şemsettin Altındal Enhanced sensing capabilities of UV–visible p-n and p-i-n photodiodes using unique layer and contact configurations Engineering Science and Technology, an International Journal Photodiodes Organic semiconductor Self-powered mode Photosensitivity Electronic Properties |
| title | Enhanced sensing capabilities of UV–visible p-n and p-i-n photodiodes using unique layer and contact configurations |
| title_full | Enhanced sensing capabilities of UV–visible p-n and p-i-n photodiodes using unique layer and contact configurations |
| title_fullStr | Enhanced sensing capabilities of UV–visible p-n and p-i-n photodiodes using unique layer and contact configurations |
| title_full_unstemmed | Enhanced sensing capabilities of UV–visible p-n and p-i-n photodiodes using unique layer and contact configurations |
| title_short | Enhanced sensing capabilities of UV–visible p-n and p-i-n photodiodes using unique layer and contact configurations |
| title_sort | enhanced sensing capabilities of uv visible p n and p i n photodiodes using unique layer and contact configurations |
| topic | Photodiodes Organic semiconductor Self-powered mode Photosensitivity Electronic Properties |
| url | http://www.sciencedirect.com/science/article/pii/S2215098625000308 |
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