Strain-engineering quantum anomalous hall state in janus MnBi2SexTe4−x monolayers
Exploring intrinsic magnetic topological insulators (TIs) for next-generation spintronic devices is still challenging in recent years. Here, we present a theoretical investigation on the electronic, magnetic and topological properties of monolayer (ML) Janus MnBi2SexTe4−x (1 ≤ x ≤ 3), derived from t...
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Elsevier
2025-02-01
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| Series: | Results in Physics |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S2211379725000099 |
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| author | Jiale Chen Pengfei Li Jun Hu |
| author_facet | Jiale Chen Pengfei Li Jun Hu |
| author_sort | Jiale Chen |
| collection | DOAJ |
| description | Exploring intrinsic magnetic topological insulators (TIs) for next-generation spintronic devices is still challenging in recent years. Here, we present a theoretical investigation on the electronic, magnetic and topological properties of monolayer (ML) Janus MnBi2SexTe4−x (1 ≤ x ≤ 3), derived from two trivial magnetic semiconductors ML MnBi2Se4 and MnBi2Te4. Our band structure analysis reveals that two out of the six Janus structures exhibit band inversion induced by spin–orbit coupling. These structures are confirmed to have nonzero integer Chern numbers, indicating their topological nature. Moreover, the topological state is robust under moderate biaxial strains. Interestingly, applying compressive strain results in a high Chern number of 2 and enhances their magnetic stability at elevated temperatures. Our findings offer an effective strategy to engineer magnetic TI states within the ML MnBi2Te4 family. |
| format | Article |
| id | doaj-art-25d377c20bd548e2b5ddffde63ec038b |
| institution | DOAJ |
| issn | 2211-3797 |
| language | English |
| publishDate | 2025-02-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Results in Physics |
| spelling | doaj-art-25d377c20bd548e2b5ddffde63ec038b2025-08-20T03:01:07ZengElsevierResults in Physics2211-37972025-02-016910811510.1016/j.rinp.2025.108115Strain-engineering quantum anomalous hall state in janus MnBi2SexTe4−x monolayersJiale Chen0Pengfei Li1Jun Hu2Institute of High Pressure Physics, School of Physical Science and Technology, Ningbo University, Ningbo 315211 China; Key Laboratory of Materials Physics and Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031 ChinaKey Laboratory of Materials Physics and Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031 ChinaInstitute of High Pressure Physics, School of Physical Science and Technology, Ningbo University, Ningbo 315211 China; Corresponding author.Exploring intrinsic magnetic topological insulators (TIs) for next-generation spintronic devices is still challenging in recent years. Here, we present a theoretical investigation on the electronic, magnetic and topological properties of monolayer (ML) Janus MnBi2SexTe4−x (1 ≤ x ≤ 3), derived from two trivial magnetic semiconductors ML MnBi2Se4 and MnBi2Te4. Our band structure analysis reveals that two out of the six Janus structures exhibit band inversion induced by spin–orbit coupling. These structures are confirmed to have nonzero integer Chern numbers, indicating their topological nature. Moreover, the topological state is robust under moderate biaxial strains. Interestingly, applying compressive strain results in a high Chern number of 2 and enhances their magnetic stability at elevated temperatures. Our findings offer an effective strategy to engineer magnetic TI states within the ML MnBi2Te4 family.http://www.sciencedirect.com/science/article/pii/S2211379725000099Quantum anomalous hall effectMagnetic topological insulatorsJanus StructureTwo-dimensional materialsFirst-principles calculations |
| spellingShingle | Jiale Chen Pengfei Li Jun Hu Strain-engineering quantum anomalous hall state in janus MnBi2SexTe4−x monolayers Results in Physics Quantum anomalous hall effect Magnetic topological insulators Janus Structure Two-dimensional materials First-principles calculations |
| title | Strain-engineering quantum anomalous hall state in janus MnBi2SexTe4−x monolayers |
| title_full | Strain-engineering quantum anomalous hall state in janus MnBi2SexTe4−x monolayers |
| title_fullStr | Strain-engineering quantum anomalous hall state in janus MnBi2SexTe4−x monolayers |
| title_full_unstemmed | Strain-engineering quantum anomalous hall state in janus MnBi2SexTe4−x monolayers |
| title_short | Strain-engineering quantum anomalous hall state in janus MnBi2SexTe4−x monolayers |
| title_sort | strain engineering quantum anomalous hall state in janus mnbi2sexte4 x monolayers |
| topic | Quantum anomalous hall effect Magnetic topological insulators Janus Structure Two-dimensional materials First-principles calculations |
| url | http://www.sciencedirect.com/science/article/pii/S2211379725000099 |
| work_keys_str_mv | AT jialechen strainengineeringquantumanomaloushallstateinjanusmnbi2sexte4xmonolayers AT pengfeili strainengineeringquantumanomaloushallstateinjanusmnbi2sexte4xmonolayers AT junhu strainengineeringquantumanomaloushallstateinjanusmnbi2sexte4xmonolayers |