Local Fermi Level Engineering in 2D‐MoS2 Realized via Microcontact Printing of Self‐Assembled Monolayers for Next‐Generation Electronics
Abstract Silicon‐based technology is approaching scalability limits due to severe short‐channel effects arising from its intrinsic bulk properties. In contrast, two‐dimensional (2D) transition metal dichalcogenides (TMDCs) exhibit remarkable resilience to these effects because of their atomic‐scale...
Saved in:
| Main Authors: | Sarah Grützmacher, Max Heyl, Norbert Koch, Emil J. W. List‐Kratochvil, Giovanni Ligorio |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH
2025-08-01
|
| Series: | Advanced Electronic Materials |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/aelm.202500081 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
Enhanced Photoresponse in Intermingled WS2 and MoS2 Nanodiscs on Graphene Heterostructure Nanohybrids
by: Samar Ghopry, et al.
Published: (2025-07-01) -
Biological Sensing Using Vertical MoS<sub>2</sub>-Graphene Heterostructure-Based Field-Effect Transistor Biosensors
by: Ying Chen, et al.
Published: (2025-06-01) -
Impact of Underlying Insulators on the Crystallinity and Antisite Defect Formation in PVD-MoS<sub>2</sub> Films
by: Naoki Matsunaga, et al.
Published: (2025-01-01) -
Microelectrode Implantation in Human Insula: Technical Challenges and Recording Insights
by: Daphné Citherlet, et al.
Published: (2025-05-01) -
Onion-shell nuclei on monolayer MoS2 facilitate friction reduction
by: Haowen Luo, et al.
Published: (2025-07-01)