Enhanced Light Scattering by Preferred Orientation Control of Ga Doped ZnO Films Prepared through MOCVD
We have explored the effective approach to fabricate GZO/ZnO films that can make the pyramidal surface structures of GZO films for effective light scattering by employing a low temperature ZnO buffer layer prior to high temperature GZO film growth. The GZO thin films exhibit the typical preferred gr...
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| Format: | Article |
| Language: | English |
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Wiley
2016-01-01
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| Series: | International Journal of Photoenergy |
| Online Access: | http://dx.doi.org/10.1155/2016/1217576 |
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| author | Long Giang Bach Nam Giang Nguyen Van Thi Thanh Ho |
| author_facet | Long Giang Bach Nam Giang Nguyen Van Thi Thanh Ho |
| author_sort | Long Giang Bach |
| collection | DOAJ |
| description | We have explored the effective approach to fabricate GZO/ZnO films that can make the pyramidal surface structures of GZO films for effective light scattering by employing a low temperature ZnO buffer layer prior to high temperature GZO film growth. The GZO thin films exhibit the typical preferred growth orientations along the (002) crystallographic direction at deposition temperature of 400°C and SEM showed that column-like granule structure with planar surface was formed. In contrast, GZO films with a pyramidal texture surface were successfully developed by the control of (110) preferred orientation. We found that the light diffuse transmittance of the film with a GZO (800 nm)/ZnO (766 nm) exhibited 13% increase at 420 nm wavelength due to the formed large grain size of the pyramidal texture surface. Thus, the obtained GZO films deposited over ZnO buffer layer have high potential for use as front TCO layers in Si-based thin film solar cells. These results could develop the potential way to fabricate TCO based ZnO thin film using MOCVD or sputtering techniques by depositing a low temperature ZnO layer to serve as a template for high temperature GZO film growth. The GZO films exhibited satisfactory optoelectric properties. |
| format | Article |
| id | doaj-art-257844dde3424c2aa810152f63db87db |
| institution | Kabale University |
| issn | 1110-662X 1687-529X |
| language | English |
| publishDate | 2016-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | International Journal of Photoenergy |
| spelling | doaj-art-257844dde3424c2aa810152f63db87db2025-02-03T01:02:07ZengWileyInternational Journal of Photoenergy1110-662X1687-529X2016-01-01201610.1155/2016/12175761217576Enhanced Light Scattering by Preferred Orientation Control of Ga Doped ZnO Films Prepared through MOCVDLong Giang Bach0Nam Giang Nguyen1Van Thi Thanh Ho2NTT Institute of Hi-Technology, Nguyen Tat Thanh University, Ho Chi Minh City 70000, VietnamThin Film Solar Cells Laboratory, Department of Chemical Engineering, National Taiwan University of Science and Technology (NTUST), Taipei City 106, TaiwanHo Chi Minh City University of Natural Resources and Environment (HCMUNRE), Ho Chi Minh City 70000, VietnamWe have explored the effective approach to fabricate GZO/ZnO films that can make the pyramidal surface structures of GZO films for effective light scattering by employing a low temperature ZnO buffer layer prior to high temperature GZO film growth. The GZO thin films exhibit the typical preferred growth orientations along the (002) crystallographic direction at deposition temperature of 400°C and SEM showed that column-like granule structure with planar surface was formed. In contrast, GZO films with a pyramidal texture surface were successfully developed by the control of (110) preferred orientation. We found that the light diffuse transmittance of the film with a GZO (800 nm)/ZnO (766 nm) exhibited 13% increase at 420 nm wavelength due to the formed large grain size of the pyramidal texture surface. Thus, the obtained GZO films deposited over ZnO buffer layer have high potential for use as front TCO layers in Si-based thin film solar cells. These results could develop the potential way to fabricate TCO based ZnO thin film using MOCVD or sputtering techniques by depositing a low temperature ZnO layer to serve as a template for high temperature GZO film growth. The GZO films exhibited satisfactory optoelectric properties.http://dx.doi.org/10.1155/2016/1217576 |
| spellingShingle | Long Giang Bach Nam Giang Nguyen Van Thi Thanh Ho Enhanced Light Scattering by Preferred Orientation Control of Ga Doped ZnO Films Prepared through MOCVD International Journal of Photoenergy |
| title | Enhanced Light Scattering by Preferred Orientation Control of Ga Doped ZnO Films Prepared through MOCVD |
| title_full | Enhanced Light Scattering by Preferred Orientation Control of Ga Doped ZnO Films Prepared through MOCVD |
| title_fullStr | Enhanced Light Scattering by Preferred Orientation Control of Ga Doped ZnO Films Prepared through MOCVD |
| title_full_unstemmed | Enhanced Light Scattering by Preferred Orientation Control of Ga Doped ZnO Films Prepared through MOCVD |
| title_short | Enhanced Light Scattering by Preferred Orientation Control of Ga Doped ZnO Films Prepared through MOCVD |
| title_sort | enhanced light scattering by preferred orientation control of ga doped zno films prepared through mocvd |
| url | http://dx.doi.org/10.1155/2016/1217576 |
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