Construction and Study of Hetreojunction Solar Cell Based on Dodecylbenzene Sulfonic Acid-Doped Polyaniline/n-Si
Polyaniline/n-type Si heterojunctions solar cell are fabricated by spin coating of soluble dodecylbenzene sulfonic acid (DBSA)-doped polyaniline onto n-type Si substrate. The electrical characterization of the Al/n-type Si/polyaniline/Au (Ag) structure was investigated by using current-voltage (I-V)...
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| Format: | Article |
| Language: | English |
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Wiley
2012-01-01
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| Series: | International Journal of Photoenergy |
| Online Access: | http://dx.doi.org/10.1155/2012/917020 |
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| author | I. Morsi Sh. Ebrahim M. Soliman |
| author_facet | I. Morsi Sh. Ebrahim M. Soliman |
| author_sort | I. Morsi |
| collection | DOAJ |
| description | Polyaniline/n-type Si heterojunctions solar cell are fabricated by spin coating of soluble dodecylbenzene sulfonic acid (DBSA)-doped polyaniline onto n-type Si substrate. The electrical characterization of the Al/n-type Si/polyaniline/Au (Ag) structure was investigated by using current-voltage (I-V), capacitance-voltage (C-V), and impedance spectroscopy under darkness and illumination. The photovoltaic cell parameters, that is, open-circuit voltage (𝑉oc), short-circuit current density (𝐽sc), fill factor (FF), and energy conversion efficiency (η) were calculated. The highest 𝐽sc, 𝑉oc, and efficiency of these heterojunctions obtained using PANI-DBSA as a window layer (wideband gap) and Au as front contact are 1.8 mA/cm2, 0.436 V, and 0.13%, respectively. From Mott-Schottky plots, it was found that order of charge carrier concentrations is 3.5×1014 and 1.0×1015/cm3 for the heterojunctions using Au as front contact under darknessness and illumination, respectively. Impedance study of this type of solar cell showed that the shunt resistance and series resistance decreased under illumination. |
| format | Article |
| id | doaj-art-248be6a6a0c34159a48a8cc41c249eba |
| institution | Kabale University |
| issn | 1110-662X 1687-529X |
| language | English |
| publishDate | 2012-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | International Journal of Photoenergy |
| spelling | doaj-art-248be6a6a0c34159a48a8cc41c249eba2025-02-03T06:11:36ZengWileyInternational Journal of Photoenergy1110-662X1687-529X2012-01-01201210.1155/2012/917020917020Construction and Study of Hetreojunction Solar Cell Based on Dodecylbenzene Sulfonic Acid-Doped Polyaniline/n-SiI. Morsi0Sh. Ebrahim1M. Soliman2Electronics and Communications Department, Arab Academy for Science, Technology and Maritime Transport, P.O. Box 1029, Alexandria, EgyptDepartment of Materials Science, Institute of Graduate Studies and Research, Alexandria University, P.O. Box 832, Alexandria, EgyptDepartment of Materials Science, Institute of Graduate Studies and Research, Alexandria University, P.O. Box 832, Alexandria, EgyptPolyaniline/n-type Si heterojunctions solar cell are fabricated by spin coating of soluble dodecylbenzene sulfonic acid (DBSA)-doped polyaniline onto n-type Si substrate. The electrical characterization of the Al/n-type Si/polyaniline/Au (Ag) structure was investigated by using current-voltage (I-V), capacitance-voltage (C-V), and impedance spectroscopy under darkness and illumination. The photovoltaic cell parameters, that is, open-circuit voltage (𝑉oc), short-circuit current density (𝐽sc), fill factor (FF), and energy conversion efficiency (η) were calculated. The highest 𝐽sc, 𝑉oc, and efficiency of these heterojunctions obtained using PANI-DBSA as a window layer (wideband gap) and Au as front contact are 1.8 mA/cm2, 0.436 V, and 0.13%, respectively. From Mott-Schottky plots, it was found that order of charge carrier concentrations is 3.5×1014 and 1.0×1015/cm3 for the heterojunctions using Au as front contact under darknessness and illumination, respectively. Impedance study of this type of solar cell showed that the shunt resistance and series resistance decreased under illumination.http://dx.doi.org/10.1155/2012/917020 |
| spellingShingle | I. Morsi Sh. Ebrahim M. Soliman Construction and Study of Hetreojunction Solar Cell Based on Dodecylbenzene Sulfonic Acid-Doped Polyaniline/n-Si International Journal of Photoenergy |
| title | Construction and Study of Hetreojunction Solar Cell Based on Dodecylbenzene Sulfonic Acid-Doped Polyaniline/n-Si |
| title_full | Construction and Study of Hetreojunction Solar Cell Based on Dodecylbenzene Sulfonic Acid-Doped Polyaniline/n-Si |
| title_fullStr | Construction and Study of Hetreojunction Solar Cell Based on Dodecylbenzene Sulfonic Acid-Doped Polyaniline/n-Si |
| title_full_unstemmed | Construction and Study of Hetreojunction Solar Cell Based on Dodecylbenzene Sulfonic Acid-Doped Polyaniline/n-Si |
| title_short | Construction and Study of Hetreojunction Solar Cell Based on Dodecylbenzene Sulfonic Acid-Doped Polyaniline/n-Si |
| title_sort | construction and study of hetreojunction solar cell based on dodecylbenzene sulfonic acid doped polyaniline n si |
| url | http://dx.doi.org/10.1155/2012/917020 |
| work_keys_str_mv | AT imorsi constructionandstudyofhetreojunctionsolarcellbasedondodecylbenzenesulfonicaciddopedpolyanilinensi AT shebrahim constructionandstudyofhetreojunctionsolarcellbasedondodecylbenzenesulfonicaciddopedpolyanilinensi AT msoliman constructionandstudyofhetreojunctionsolarcellbasedondodecylbenzenesulfonicaciddopedpolyanilinensi |