Metal‐Semiconductor Phase Transition in Multilayer VSe2 for Broadband Photodetector with High Sensitivity

Metal‐Semiconductor Phase Transition in Multilayer VSe2 for Broadband Photodetector with High Sensitivity

Abstract 2D 1T‐VSe2 is a charge‐density wave (CDW) system that also exhibits room‐temperature ferromagnetism, making it promising for photodetecting devices. However, the sensitivity of 1T‐VSe2 photodetectors is limited by the high dark current due to its metallic feature of T‐phase VSe2. So far, ph...

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Bibliographic Details
Main Authors: Yujue Yang, Mengjia Xia, Qixiao Zhao, Zhidong Pan, Huafeng Dong, Xin Zhang, Fugen Wu, Juehan Yang, Nengjie Huo
Format: Article
Language:English
Published: Wiley-VCH 2025-05-01
Series:Advanced Electronic Materials
Subjects:
1T‐VSe2
2H‐VSe2
metal‐semiconductor
phase transition
photodetector
Online Access:https://doi.org/10.1002/aelm.202400682
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