High-Performance Carbon Nanotube Optoelectronic Transistor With Optimized Process for 3D Communication Circuit Applications
One-dimensionalcarbon nanotube field-effect transistors (CNFETs) have offered a solution for obtaining high transistor performance in a compatible low-temperature BEOL process, enabling monolithic 3D integration benefits for more functional circuits. Currently, CNT transistors need to further improv...
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| Format: | Article |
| Language: | English |
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2024-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
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| Online Access: | https://ieeexplore.ieee.org/document/10685345/ |
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| author | Shuang Liu Heyi Huang Yanqing Li Yadong Zhang Feixiong Wang Zhaohao Zhang Qingzhu Zhang Jiali Huo Jiaxin Yao Jing Wen Huaxiang Yin |
| author_facet | Shuang Liu Heyi Huang Yanqing Li Yadong Zhang Feixiong Wang Zhaohao Zhang Qingzhu Zhang Jiali Huo Jiaxin Yao Jing Wen Huaxiang Yin |
| author_sort | Shuang Liu |
| collection | DOAJ |
| description | One-dimensionalcarbon nanotube field-effect transistors (CNFETs) have offered a solution for obtaining high transistor performance in a compatible low-temperature BEOL process, enabling monolithic 3D integration benefits for more functional circuits. Currently, CNT transistors need to further improve their performance with a more stable process and explore the most suitable circuit application scene. In this study, we successfully enhanced the performance of CNFETs through special Y2O3 film passivation and vacuum annealing processes. The on-state current of the optimized device was improved by <inline-formula> <tex-math notation="LaTeX">$36.6\times $ </tex-math></inline-formula> compared to the device without these processes. Besides, the subthreshold swing (SS) was notably reduced from 259 mV/dec to 215 mV/dec and the threshold voltage was decreased from 2.02 V to 1.79 V due to the reduction of the interface state. Meanwhile, the devices’ optoelectronic characteristics were significantly improved and exhibited a <inline-formula> <tex-math notation="LaTeX">$72\times $ </tex-math></inline-formula> increase in <inline-formula> <tex-math notation="LaTeX">$\Delta $ </tex-math></inline-formula> Ids under identical illumination. With an improved annealing process, the <inline-formula> <tex-math notation="LaTeX">$\Delta $ </tex-math></inline-formula> Ids were further increased to <inline-formula> <tex-math notation="LaTeX">$231\times $ </tex-math></inline-formula> compared to the original device because of the reduction of defects within the device. Finally, the tentative Morse code communication applications all by the optimized CNFETs were obtained. These technologies and functional implementations provided a promising approach for future 3D functional communication systems with CNT technology. |
| format | Article |
| id | doaj-art-2360aa6dc38649d9b9e99d00e8220be4 |
| institution | Kabale University |
| issn | 2168-6734 |
| language | English |
| publishDate | 2024-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj-art-2360aa6dc38649d9b9e99d00e8220be42025-01-29T00:00:34ZengIEEEIEEE Journal of the Electron Devices Society2168-67342024-01-011288989710.1109/JEDS.2024.346566910685345High-Performance Carbon Nanotube Optoelectronic Transistor With Optimized Process for 3D Communication Circuit ApplicationsShuang Liu0https://orcid.org/0009-0007-8829-2464Heyi Huang1Yanqing Li2Yadong Zhang3https://orcid.org/0000-0002-8688-6791Feixiong Wang4https://orcid.org/0000-0002-9129-9399Zhaohao Zhang5https://orcid.org/0000-0002-1583-9939Qingzhu Zhang6https://orcid.org/0000-0003-0035-0652Jiali Huo7https://orcid.org/0000-0001-9007-2363Jiaxin Yao8https://orcid.org/0000-0002-7668-4811Jing Wen9Huaxiang Yin10https://orcid.org/0000-0001-8066-6002Key Laboratory of Fabrication Technologies for Integrated Circuits, Chinese Academy of Sciences, Beijing, ChinaKey Laboratory of Fabrication Technologies for Integrated Circuits, Chinese Academy of Sciences, Beijing, ChinaKey Laboratory of Fabrication Technologies for Integrated Circuits, Chinese Academy of Sciences, Beijing, ChinaKey Laboratory of Fabrication Technologies for Integrated Circuits, Chinese Academy of Sciences, Beijing, ChinaKey Laboratory of Fabrication Technologies for Integrated Circuits, Chinese Academy of Sciences, Beijing, ChinaKey Laboratory of Fabrication Technologies for Integrated Circuits, Chinese Academy of Sciences, Beijing, ChinaKey Laboratory of Fabrication Technologies for Integrated Circuits, Chinese Academy of Sciences, Beijing, ChinaKey Laboratory of Fabrication Technologies for Integrated Circuits, Chinese Academy of Sciences, Beijing, ChinaKey Laboratory of Fabrication Technologies for Integrated Circuits, Chinese Academy of Sciences, Beijing, ChinaKey Laboratory of Fabrication Technologies for Integrated Circuits, Chinese Academy of Sciences, Beijing, ChinaKey Laboratory of Fabrication Technologies for Integrated Circuits, Chinese Academy of Sciences, Beijing, ChinaOne-dimensionalcarbon nanotube field-effect transistors (CNFETs) have offered a solution for obtaining high transistor performance in a compatible low-temperature BEOL process, enabling monolithic 3D integration benefits for more functional circuits. Currently, CNT transistors need to further improve their performance with a more stable process and explore the most suitable circuit application scene. In this study, we successfully enhanced the performance of CNFETs through special Y2O3 film passivation and vacuum annealing processes. The on-state current of the optimized device was improved by <inline-formula> <tex-math notation="LaTeX">$36.6\times $ </tex-math></inline-formula> compared to the device without these processes. Besides, the subthreshold swing (SS) was notably reduced from 259 mV/dec to 215 mV/dec and the threshold voltage was decreased from 2.02 V to 1.79 V due to the reduction of the interface state. Meanwhile, the devices’ optoelectronic characteristics were significantly improved and exhibited a <inline-formula> <tex-math notation="LaTeX">$72\times $ </tex-math></inline-formula> increase in <inline-formula> <tex-math notation="LaTeX">$\Delta $ </tex-math></inline-formula> Ids under identical illumination. With an improved annealing process, the <inline-formula> <tex-math notation="LaTeX">$\Delta $ </tex-math></inline-formula> Ids were further increased to <inline-formula> <tex-math notation="LaTeX">$231\times $ </tex-math></inline-formula> compared to the original device because of the reduction of defects within the device. Finally, the tentative Morse code communication applications all by the optimized CNFETs were obtained. These technologies and functional implementations provided a promising approach for future 3D functional communication systems with CNT technology.https://ieeexplore.ieee.org/document/10685345/Carbon nanotube field-effect transistors (CNFETs)optoelectronic devicesMorse code communication |
| spellingShingle | Shuang Liu Heyi Huang Yanqing Li Yadong Zhang Feixiong Wang Zhaohao Zhang Qingzhu Zhang Jiali Huo Jiaxin Yao Jing Wen Huaxiang Yin High-Performance Carbon Nanotube Optoelectronic Transistor With Optimized Process for 3D Communication Circuit Applications IEEE Journal of the Electron Devices Society Carbon nanotube field-effect transistors (CNFETs) optoelectronic devices Morse code communication |
| title | High-Performance Carbon Nanotube Optoelectronic Transistor With Optimized Process for 3D Communication Circuit Applications |
| title_full | High-Performance Carbon Nanotube Optoelectronic Transistor With Optimized Process for 3D Communication Circuit Applications |
| title_fullStr | High-Performance Carbon Nanotube Optoelectronic Transistor With Optimized Process for 3D Communication Circuit Applications |
| title_full_unstemmed | High-Performance Carbon Nanotube Optoelectronic Transistor With Optimized Process for 3D Communication Circuit Applications |
| title_short | High-Performance Carbon Nanotube Optoelectronic Transistor With Optimized Process for 3D Communication Circuit Applications |
| title_sort | high performance carbon nanotube optoelectronic transistor with optimized process for 3d communication circuit applications |
| topic | Carbon nanotube field-effect transistors (CNFETs) optoelectronic devices Morse code communication |
| url | https://ieeexplore.ieee.org/document/10685345/ |
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