Fabrication of a Cu(InGa)Se2 Thin Film Photovoltaic Absorber by Rapid Thermal Annealing of CuGa/In Precursors Coated with a Se Layer
Cu(InGa)Se2 (CIGS) thin film absorbers are prepared using sputtering and selenization processes. The CuGa/In precursors are selenized during rapid thermal annealing (RTA), by the deposition of a Se layer on them. This work investigates the effect of the Cu content in precursors on the structural and...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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Wiley
2013-01-01
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| Series: | International Journal of Photoenergy |
| Online Access: | http://dx.doi.org/10.1155/2013/132105 |
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| _version_ | 1832562451404554240 |
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| author | Chun-Yao Hsu Peng-Cheng Huang Yu-Yao Chen Dong-Cherng Wen |
| author_facet | Chun-Yao Hsu Peng-Cheng Huang Yu-Yao Chen Dong-Cherng Wen |
| author_sort | Chun-Yao Hsu |
| collection | DOAJ |
| description | Cu(InGa)Se2 (CIGS) thin film absorbers are prepared using sputtering and selenization processes. The CuGa/In precursors are selenized during rapid thermal annealing (RTA), by the deposition of a Se layer on them. This work investigates the effect of the Cu content in precursors on the structural and electrical properties of the absorber. Using X-ray diffraction, field emission scanning electron microscopy, Raman spectroscopy, and Hall effect measurement, it is found that the CIGS thin films produced exhibit facetted grains and a single chalcopyrite phase with a preferred orientation along the (1 1 2) plane. A Cu-poor precursor with a Cu/() ratio of 0.75 demonstrates a higher resistance, due to an increase in the grain boundary scattering and a reduced carrier lifetime. A Cu-rich precursor with a Cu/() ratio of 1.15 exhibits an inappropriate second phase () in the absorber. However, the precursor with a Cu/() ratio of 0.95 exhibits larger grains and lower resistance, which is suitable for its application to solar cells. The deposition of this precursor on Mo-coated soda lime glass substrate and further RTA causes the formation of a MoSe2 layer at the interface of the Mo and CIGS. |
| format | Article |
| id | doaj-art-23393d34779941318bc92e4cb59a01fd |
| institution | Kabale University |
| issn | 1110-662X 1687-529X |
| language | English |
| publishDate | 2013-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | International Journal of Photoenergy |
| spelling | doaj-art-23393d34779941318bc92e4cb59a01fd2025-02-03T01:22:33ZengWileyInternational Journal of Photoenergy1110-662X1687-529X2013-01-01201310.1155/2013/132105132105Fabrication of a Cu(InGa)Se2 Thin Film Photovoltaic Absorber by Rapid Thermal Annealing of CuGa/In Precursors Coated with a Se LayerChun-Yao Hsu0Peng-Cheng Huang1Yu-Yao Chen2Dong-Cherng Wen3Department of Mechanical Engineering, Lunghwa University of Science and Technology, Taoyuan 33306, TaiwanDepartment of Mechanical Engineering, Lunghwa University of Science and Technology, Taoyuan 33306, TaiwanDepartment of Industrial Engineering, Shanghai Dianji University, Shanghai 201306, ChinaDepartment of Mechanical Engineering, China University of Science and Technology, Taipei 11581, TaiwanCu(InGa)Se2 (CIGS) thin film absorbers are prepared using sputtering and selenization processes. The CuGa/In precursors are selenized during rapid thermal annealing (RTA), by the deposition of a Se layer on them. This work investigates the effect of the Cu content in precursors on the structural and electrical properties of the absorber. Using X-ray diffraction, field emission scanning electron microscopy, Raman spectroscopy, and Hall effect measurement, it is found that the CIGS thin films produced exhibit facetted grains and a single chalcopyrite phase with a preferred orientation along the (1 1 2) plane. A Cu-poor precursor with a Cu/() ratio of 0.75 demonstrates a higher resistance, due to an increase in the grain boundary scattering and a reduced carrier lifetime. A Cu-rich precursor with a Cu/() ratio of 1.15 exhibits an inappropriate second phase () in the absorber. However, the precursor with a Cu/() ratio of 0.95 exhibits larger grains and lower resistance, which is suitable for its application to solar cells. The deposition of this precursor on Mo-coated soda lime glass substrate and further RTA causes the formation of a MoSe2 layer at the interface of the Mo and CIGS.http://dx.doi.org/10.1155/2013/132105 |
| spellingShingle | Chun-Yao Hsu Peng-Cheng Huang Yu-Yao Chen Dong-Cherng Wen Fabrication of a Cu(InGa)Se2 Thin Film Photovoltaic Absorber by Rapid Thermal Annealing of CuGa/In Precursors Coated with a Se Layer International Journal of Photoenergy |
| title | Fabrication of a Cu(InGa)Se2 Thin Film Photovoltaic Absorber by Rapid Thermal Annealing of CuGa/In Precursors Coated with a Se Layer |
| title_full | Fabrication of a Cu(InGa)Se2 Thin Film Photovoltaic Absorber by Rapid Thermal Annealing of CuGa/In Precursors Coated with a Se Layer |
| title_fullStr | Fabrication of a Cu(InGa)Se2 Thin Film Photovoltaic Absorber by Rapid Thermal Annealing of CuGa/In Precursors Coated with a Se Layer |
| title_full_unstemmed | Fabrication of a Cu(InGa)Se2 Thin Film Photovoltaic Absorber by Rapid Thermal Annealing of CuGa/In Precursors Coated with a Se Layer |
| title_short | Fabrication of a Cu(InGa)Se2 Thin Film Photovoltaic Absorber by Rapid Thermal Annealing of CuGa/In Precursors Coated with a Se Layer |
| title_sort | fabrication of a cu inga se2 thin film photovoltaic absorber by rapid thermal annealing of cuga in precursors coated with a se layer |
| url | http://dx.doi.org/10.1155/2013/132105 |
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