An Amorphous (Al<sub>0.12</sub>Ga<sub>0.88</sub>)<sub>2</sub>O<sub>3</sub> Deep Ultraviolet Photodetector
The authors report the deposition of an (Al<sub>x</sub>Ga<sub>1-x</sub>)<sub>2</sub>O<sub>3</sub> amorphous thin film on sapphire substrates by sputter deposition. An amorphous deep ultraviolet (UV) (Al<sub>0.12</sub>Ga<sub>0.88</s...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2020-01-01
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| Series: | IEEE Photonics Journal |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9115846/ |
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| Summary: | The authors report the deposition of an (Al<sub>x</sub>Ga<sub>1-x</sub>)<sub>2</sub>O<sub>3</sub> amorphous thin film on sapphire substrates by sputter deposition. An amorphous deep ultraviolet (UV) (Al<sub>0.12</sub>Ga<sub>0.88</sub>)<sub>2</sub>O<sub>3</sub> photodetector, with a cutoff wavelength at 230 nm, was also fabricated. With −10 V applied bias, it was found the dark leakage current and the linear dynamic range (LDR) of the fabricated photodetector were about 1.23 × 10<sup>−9</sup> A and 59.51 dB, respectively. With the same −10 V applied bias, the UVC/UVA contrast ratio was larger than 20. With λ<sub>illumination</sub> = 230 nm and −5 V applied bias, it was found noise equivalent power (NEP) and detectivity (D<sup>*</sup>) of the fabricated amorphous deep UV (Al<sub>0.12</sub>Ga<sub>0.88</sub>)<sub>2</sub>O<sub>3</sub> photodetector were 9.94 × 10<sup>−11</sup> W and 2.11 × 10<sup>10</sup> cmHz<sup>1/2</sup>W<sup>−1</sup>, respectively. These results suggest the fabricated amorphous deep UV (Al<sub>0.12</sub>Ga<sub>0.88</sub>)<sub>2</sub>O<sub>3</sub> photodetector herein indicate a cost-effective solution for developing DUV photodetector applications. |
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| ISSN: | 1943-0655 |