Room-Temperature Voltage Stressing Effects on Resistive Switching of Conductive-Bridging RAM Cells with Cu-Doped SiO2 Films
SiO2 or Cu-doped SiO2 (Cu:SiO2) insulating films combined with Cu or W upper electrodes were constructed on the W/Si substrates to form the conductive-bridging RAM (CB-RAM) cells. The CB-RAMs were then subjected to a constant-voltage stressing (CVS) at room temperature. The experimental results show...
Saved in:
| Main Authors: | , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley
2014-01-01
|
| Series: | Advances in Materials Science and Engineering |
| Online Access: | http://dx.doi.org/10.1155/2014/594516 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|