Ni-Based Ohmic Contacts to n-Type 4H-SiC: The Formation Mechanism and Thermal Stability
The fabrication of low-resistance and thermal stable ohmic contacts is important for realization of reliable SiC devices. For the n-type SiC, Ni-based metallization is most commonly used for Schottky and ohmic contacts. Many experimental studies have been performed in order to understand the mechani...
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| Format: | Article |
| Language: | English |
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Wiley
2016-01-01
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| Series: | Advances in Condensed Matter Physics |
| Online Access: | http://dx.doi.org/10.1155/2016/9273702 |
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| author | A. V. Kuchuk P. Borowicz M. Wzorek M. Borysiewicz R. Ratajczak K. Golaszewska E. Kaminska V. Kladko A. Piotrowska |
| author_facet | A. V. Kuchuk P. Borowicz M. Wzorek M. Borysiewicz R. Ratajczak K. Golaszewska E. Kaminska V. Kladko A. Piotrowska |
| author_sort | A. V. Kuchuk |
| collection | DOAJ |
| description | The fabrication of low-resistance and thermal stable ohmic contacts is important for realization of reliable SiC devices. For the n-type SiC, Ni-based metallization is most commonly used for Schottky and ohmic contacts. Many experimental studies have been performed in order to understand the mechanism of ohmic contact formation and different models were proposed to explain the Schottky to ohmic transition for Ni/SiC contacts. In the present review, we summarize the last key results on the matter and post open questions concerning the unclear issues of ohmic contacts to n-type SiC. Analysis of the literature data and our own experimental observations have led to the conclusion that the annealing at high temperature leads to the preferential orientation of silicide at the heterointerface (0001)SiC//(013)δ-Ni2Si. Moreover, we may conclude that only δ-Ni2Si grains play a key role in determining electrical transport properties at the contact/SiC interface. Finally, we show that the diffusion barriers with free diffusion path microstructure can improve thermal stability of metal-SiC ohmic contacts for high-temperature electronics. |
| format | Article |
| id | doaj-art-2174d9ccbfb1419883c765eb868abc28 |
| institution | Kabale University |
| issn | 1687-8108 1687-8124 |
| language | English |
| publishDate | 2016-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advances in Condensed Matter Physics |
| spelling | doaj-art-2174d9ccbfb1419883c765eb868abc282025-02-03T01:31:25ZengWileyAdvances in Condensed Matter Physics1687-81081687-81242016-01-01201610.1155/2016/92737029273702Ni-Based Ohmic Contacts to n-Type 4H-SiC: The Formation Mechanism and Thermal StabilityA. V. Kuchuk0P. Borowicz1M. Wzorek2M. Borysiewicz3R. Ratajczak4K. Golaszewska5E. Kaminska6V. Kladko7A. Piotrowska8Institute of Electron Technology, Aleja Lotnikow 32/46, 02-668 Warsaw, PolandInstitute of Electron Technology, Aleja Lotnikow 32/46, 02-668 Warsaw, PolandInstitute of Electron Technology, Aleja Lotnikow 32/46, 02-668 Warsaw, PolandInstitute of Electron Technology, Aleja Lotnikow 32/46, 02-668 Warsaw, PolandNational Centre for Nuclear Research, Ulica Andrzeja Sołtana 7, 05-400 Otwock, PolandInstitute of Electron Technology, Aleja Lotnikow 32/46, 02-668 Warsaw, PolandInstitute of Electron Technology, Aleja Lotnikow 32/46, 02-668 Warsaw, PolandV. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Prospekt Nauky 41, Kyiv 03680, UkraineInstitute of Electron Technology, Aleja Lotnikow 32/46, 02-668 Warsaw, PolandThe fabrication of low-resistance and thermal stable ohmic contacts is important for realization of reliable SiC devices. For the n-type SiC, Ni-based metallization is most commonly used for Schottky and ohmic contacts. Many experimental studies have been performed in order to understand the mechanism of ohmic contact formation and different models were proposed to explain the Schottky to ohmic transition for Ni/SiC contacts. In the present review, we summarize the last key results on the matter and post open questions concerning the unclear issues of ohmic contacts to n-type SiC. Analysis of the literature data and our own experimental observations have led to the conclusion that the annealing at high temperature leads to the preferential orientation of silicide at the heterointerface (0001)SiC//(013)δ-Ni2Si. Moreover, we may conclude that only δ-Ni2Si grains play a key role in determining electrical transport properties at the contact/SiC interface. Finally, we show that the diffusion barriers with free diffusion path microstructure can improve thermal stability of metal-SiC ohmic contacts for high-temperature electronics.http://dx.doi.org/10.1155/2016/9273702 |
| spellingShingle | A. V. Kuchuk P. Borowicz M. Wzorek M. Borysiewicz R. Ratajczak K. Golaszewska E. Kaminska V. Kladko A. Piotrowska Ni-Based Ohmic Contacts to n-Type 4H-SiC: The Formation Mechanism and Thermal Stability Advances in Condensed Matter Physics |
| title | Ni-Based Ohmic Contacts to n-Type 4H-SiC: The Formation Mechanism and Thermal Stability |
| title_full | Ni-Based Ohmic Contacts to n-Type 4H-SiC: The Formation Mechanism and Thermal Stability |
| title_fullStr | Ni-Based Ohmic Contacts to n-Type 4H-SiC: The Formation Mechanism and Thermal Stability |
| title_full_unstemmed | Ni-Based Ohmic Contacts to n-Type 4H-SiC: The Formation Mechanism and Thermal Stability |
| title_short | Ni-Based Ohmic Contacts to n-Type 4H-SiC: The Formation Mechanism and Thermal Stability |
| title_sort | ni based ohmic contacts to n type 4h sic the formation mechanism and thermal stability |
| url | http://dx.doi.org/10.1155/2016/9273702 |
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