A Very Robust AlGaN/GaN HEMT Technology to High Forward Gate Bias and Current
Reports to date of GaN HEMTs subjected to forward gate bias stress include varied extents of degradation. We report an extremely robust GaN HEMT technology that survived—contrary to conventional wisdom—high forward gate bias (+6 V) and current (>1.8 A/mm) for >17.5 hours exhibiting only a slig...
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| Format: | Article |
| Language: | English |
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Wiley
2012-01-01
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| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1155/2012/493239 |
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| author | Bradley D. Christiansen Eric R. Heller Ronald A. Coutu Ramakrishna Vetury Jeffrey B. Shealy |
| author_facet | Bradley D. Christiansen Eric R. Heller Ronald A. Coutu Ramakrishna Vetury Jeffrey B. Shealy |
| author_sort | Bradley D. Christiansen |
| collection | DOAJ |
| description | Reports to date of GaN HEMTs subjected to forward gate bias stress include varied extents of degradation. We report an extremely robust GaN HEMT technology that survived—contrary to conventional wisdom—high forward gate bias (+6 V) and current (>1.8 A/mm) for >17.5 hours exhibiting only a slight change in gate diode characteristic, little decrease in maximum drain current, with only a 0.1 V positive threshold voltage shift, and, remarkably, a persisting breakdown voltage exceeding 200 V. |
| format | Article |
| id | doaj-art-1fff87dd96524908a41d169f824bda5b |
| institution | Kabale University |
| issn | 0882-7516 1563-5031 |
| language | English |
| publishDate | 2012-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Active and Passive Electronic Components |
| spelling | doaj-art-1fff87dd96524908a41d169f824bda5b2025-02-03T05:57:07ZengWileyActive and Passive Electronic Components0882-75161563-50312012-01-01201210.1155/2012/493239493239A Very Robust AlGaN/GaN HEMT Technology to High Forward Gate Bias and CurrentBradley D. Christiansen0Eric R. Heller1Ronald A. Coutu2Ramakrishna Vetury3Jeffrey B. Shealy4Department of Electrical and Computer Engineering, Air Force Institute of Technology, Wright-Patterson Air Force Base, OH 45433, USAMaterials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson Air Force Base, OH 45433, USADepartment of Electrical and Computer Engineering, Air Force Institute of Technology, Wright-Patterson Air Force Base, OH 45433, USADefense and Power Business Unit, RF Micro Devices, Inc., Charlotte, NC 28269, USADefense and Power Business Unit, RF Micro Devices, Inc., Charlotte, NC 28269, USAReports to date of GaN HEMTs subjected to forward gate bias stress include varied extents of degradation. We report an extremely robust GaN HEMT technology that survived—contrary to conventional wisdom—high forward gate bias (+6 V) and current (>1.8 A/mm) for >17.5 hours exhibiting only a slight change in gate diode characteristic, little decrease in maximum drain current, with only a 0.1 V positive threshold voltage shift, and, remarkably, a persisting breakdown voltage exceeding 200 V.http://dx.doi.org/10.1155/2012/493239 |
| spellingShingle | Bradley D. Christiansen Eric R. Heller Ronald A. Coutu Ramakrishna Vetury Jeffrey B. Shealy A Very Robust AlGaN/GaN HEMT Technology to High Forward Gate Bias and Current Active and Passive Electronic Components |
| title | A Very Robust AlGaN/GaN HEMT Technology to High Forward Gate Bias and Current |
| title_full | A Very Robust AlGaN/GaN HEMT Technology to High Forward Gate Bias and Current |
| title_fullStr | A Very Robust AlGaN/GaN HEMT Technology to High Forward Gate Bias and Current |
| title_full_unstemmed | A Very Robust AlGaN/GaN HEMT Technology to High Forward Gate Bias and Current |
| title_short | A Very Robust AlGaN/GaN HEMT Technology to High Forward Gate Bias and Current |
| title_sort | very robust algan gan hemt technology to high forward gate bias and current |
| url | http://dx.doi.org/10.1155/2012/493239 |
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