An Analysis of Temperature-Dependent Timing Jitter Factors in the Structural Design of Complementary Metal-Oxide-Semiconductor Single-Photon Avalanche Detectors

Single-Photon Avalanche Photodiodes (SPADs) are increasingly utilized in high-temperature-operated, high-performance Light Detection and Ranging (LiDAR) systems as well as in ultra-low-temperature-operated quantum science applications due to their high photon sensitivity and timing resolution. Conse...

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Main Authors: Jau-Yang Wu, Yu-Wei Lu, Meng-Hsuan Liu, Tien-Ning Chang, Chun-Hsien Liu
Format: Article
Language:English
Published: MDPI AG 2025-01-01
Series:Sensors
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Online Access:https://www.mdpi.com/1424-8220/25/2/391
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author Jau-Yang Wu
Yu-Wei Lu
Meng-Hsuan Liu
Tien-Ning Chang
Chun-Hsien Liu
author_facet Jau-Yang Wu
Yu-Wei Lu
Meng-Hsuan Liu
Tien-Ning Chang
Chun-Hsien Liu
author_sort Jau-Yang Wu
collection DOAJ
description Single-Photon Avalanche Photodiodes (SPADs) are increasingly utilized in high-temperature-operated, high-performance Light Detection and Ranging (LiDAR) systems as well as in ultra-low-temperature-operated quantum science applications due to their high photon sensitivity and timing resolution. Consequently, the jitter value of SPADs at different temperatures plays a crucial role in LiDAR systems and Quantum Key Distribution (QKD) applications. However, limited studies have been conducted on this topic. In this study, we analyze the jitter characteristics of SPAD devices, focusing on the influence of device structures in two SPAD designs fabricated using the TSMC 18HV and TSMC 13HV processes. Using picosecond lasers with wavelengths ranging from ultraviolet (405 nm) to near-infrared (905 nm), we investigate the impact of different diffusion carrier types on jitter values and their temperature dependence across a range of 0 °C to 60 °C. Our results show that the jitter value of SPAD devices with low electric field regions varies significantly with temperature. This variation can be attributed to the higher temperature-dependent diffusion constant, as demonstrated by fitting the jitter diffusion tail with two diffusion time constants. In contrast, SPADs designed with modified electric field distributions exhibit smaller diffusion time constants and weaker temperature dependence, resulting in a much smaller temperature-dependent jitter value.
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institution Kabale University
issn 1424-8220
language English
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spelling doaj-art-1ff9294d69bc4bcbbbd31a33d84b331b2025-01-24T13:48:45ZengMDPI AGSensors1424-82202025-01-0125239110.3390/s25020391An Analysis of Temperature-Dependent Timing Jitter Factors in the Structural Design of Complementary Metal-Oxide-Semiconductor Single-Photon Avalanche DetectorsJau-Yang Wu0Yu-Wei Lu1Meng-Hsuan Liu2Tien-Ning Chang3Chun-Hsien Liu4Department of Electrical Engineering, Yuan Ze University, Taoyuan 32003, TaiwanInstitute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 30010, TaiwanInstitute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 30010, TaiwanInstitute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 30010, TaiwanInstitute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 30010, TaiwanSingle-Photon Avalanche Photodiodes (SPADs) are increasingly utilized in high-temperature-operated, high-performance Light Detection and Ranging (LiDAR) systems as well as in ultra-low-temperature-operated quantum science applications due to their high photon sensitivity and timing resolution. Consequently, the jitter value of SPADs at different temperatures plays a crucial role in LiDAR systems and Quantum Key Distribution (QKD) applications. However, limited studies have been conducted on this topic. In this study, we analyze the jitter characteristics of SPAD devices, focusing on the influence of device structures in two SPAD designs fabricated using the TSMC 18HV and TSMC 13HV processes. Using picosecond lasers with wavelengths ranging from ultraviolet (405 nm) to near-infrared (905 nm), we investigate the impact of different diffusion carrier types on jitter values and their temperature dependence across a range of 0 °C to 60 °C. Our results show that the jitter value of SPAD devices with low electric field regions varies significantly with temperature. This variation can be attributed to the higher temperature-dependent diffusion constant, as demonstrated by fitting the jitter diffusion tail with two diffusion time constants. In contrast, SPADs designed with modified electric field distributions exhibit smaller diffusion time constants and weaker temperature dependence, resulting in a much smaller temperature-dependent jitter value.https://www.mdpi.com/1424-8220/25/2/391CMOS SPADjitterLiDAR
spellingShingle Jau-Yang Wu
Yu-Wei Lu
Meng-Hsuan Liu
Tien-Ning Chang
Chun-Hsien Liu
An Analysis of Temperature-Dependent Timing Jitter Factors in the Structural Design of Complementary Metal-Oxide-Semiconductor Single-Photon Avalanche Detectors
Sensors
CMOS SPAD
jitter
LiDAR
title An Analysis of Temperature-Dependent Timing Jitter Factors in the Structural Design of Complementary Metal-Oxide-Semiconductor Single-Photon Avalanche Detectors
title_full An Analysis of Temperature-Dependent Timing Jitter Factors in the Structural Design of Complementary Metal-Oxide-Semiconductor Single-Photon Avalanche Detectors
title_fullStr An Analysis of Temperature-Dependent Timing Jitter Factors in the Structural Design of Complementary Metal-Oxide-Semiconductor Single-Photon Avalanche Detectors
title_full_unstemmed An Analysis of Temperature-Dependent Timing Jitter Factors in the Structural Design of Complementary Metal-Oxide-Semiconductor Single-Photon Avalanche Detectors
title_short An Analysis of Temperature-Dependent Timing Jitter Factors in the Structural Design of Complementary Metal-Oxide-Semiconductor Single-Photon Avalanche Detectors
title_sort analysis of temperature dependent timing jitter factors in the structural design of complementary metal oxide semiconductor single photon avalanche detectors
topic CMOS SPAD
jitter
LiDAR
url https://www.mdpi.com/1424-8220/25/2/391
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