The effect of a hybrid coating of porous silicon and WS<sub>2</sub> and MoS<sub>2</sub> quantum dots on the electrical characteristics of photosensitive structures

Background. This paper examines the effect of the hybrid coating of quantum dots and porous silicon on the volt-ampere characteristic of photosensitive structures. The object of the study was silicon solar cells with a porous layer and WS2 and MoS2 quantum dots. Increasing the energy efficiency of s...

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Main Authors: Natalia A. Poluektova, Daria A. Shishkina, Danil P. Grigoriev
Format: Article
Language:English
Published: Povolzhskiy State University of Telecommunications & Informatics 2024-12-01
Series:Физика волновых процессов и радиотехнические системы
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Online Access:https://journals.ssau.ru/pwp/article/viewFile/28179/11065
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author Natalia A. Poluektova
Daria A. Shishkina
Danil P. Grigoriev
author_facet Natalia A. Poluektova
Daria A. Shishkina
Danil P. Grigoriev
author_sort Natalia A. Poluektova
collection DOAJ
description Background. This paper examines the effect of the hybrid coating of quantum dots and porous silicon on the volt-ampere characteristic of photosensitive structures. The object of the study was silicon solar cells with a porous layer and WS2 and MoS2 quantum dots. Increasing the energy efficiency of solar panels is an urgent task due to the high demand for alternative energy sources. Quantum dots, due to the properties of nanoscale structures, in combination with a layer of micro- and nanopores, can contribute to increased efficiency. Aim. Creation of photosensitive structures with porous silicon and quantum dots and subsequent investigation of their volt-ampere characteristics to identify the nature of the interaction of quantum dots with porous structures. Methods. Empirical and analytical methods were used in this work. Results. The volt-ampere characteristics of photosensitive structures are obtained. The dependence of the increase in saturation current values on the etching time and the depth of the quantum dots is revealed. Conclusion. The hybrid coating of porous silicon and WS2 and MoS2 quantum dots has a positive effect on the electrical characteristics of solar cells. However, further research is required on the dependence of increasing the efficiency of solar cells on the volume of applied quantum dots.
format Article
id doaj-art-1ed0c16c29c4477d8df044c483c3c43c
institution Kabale University
issn 1810-3189
2782-294X
language English
publishDate 2024-12-01
publisher Povolzhskiy State University of Telecommunications & Informatics
record_format Article
series Физика волновых процессов и радиотехнические системы
spelling doaj-art-1ed0c16c29c4477d8df044c483c3c43c2025-01-20T21:09:00ZengPovolzhskiy State University of Telecommunications & InformaticsФизика волновых процессов и радиотехнические системы1810-31892782-294X2024-12-012749410110.18469/1810-3189.2024.27.4.94-1018901The effect of a hybrid coating of porous silicon and WS<sub>2</sub> and MoS<sub>2</sub> quantum dots on the electrical characteristics of photosensitive structuresNatalia A. Poluektova0https://orcid.org/0000-0003-4189-6192Daria A. Shishkina1https://orcid.org/0000-0003-4118-1429Danil P. Grigoriev2https://orcid.org/0009-0007-8413-379XSamara National Research UniversitySamara National Research UniversitySamara National Research UniversityBackground. This paper examines the effect of the hybrid coating of quantum dots and porous silicon on the volt-ampere characteristic of photosensitive structures. The object of the study was silicon solar cells with a porous layer and WS2 and MoS2 quantum dots. Increasing the energy efficiency of solar panels is an urgent task due to the high demand for alternative energy sources. Quantum dots, due to the properties of nanoscale structures, in combination with a layer of micro- and nanopores, can contribute to increased efficiency. Aim. Creation of photosensitive structures with porous silicon and quantum dots and subsequent investigation of their volt-ampere characteristics to identify the nature of the interaction of quantum dots with porous structures. Methods. Empirical and analytical methods were used in this work. Results. The volt-ampere characteristics of photosensitive structures are obtained. The dependence of the increase in saturation current values on the etching time and the depth of the quantum dots is revealed. Conclusion. The hybrid coating of porous silicon and WS2 and MoS2 quantum dots has a positive effect on the electrical characteristics of solar cells. However, further research is required on the dependence of increasing the efficiency of solar cells on the volume of applied quantum dots.https://journals.ssau.ru/pwp/article/viewFile/28179/11065solar cellporous siliconquantum dotsefficiencyelectrochemical etching
spellingShingle Natalia A. Poluektova
Daria A. Shishkina
Danil P. Grigoriev
The effect of a hybrid coating of porous silicon and WS<sub>2</sub> and MoS<sub>2</sub> quantum dots on the electrical characteristics of photosensitive structures
Физика волновых процессов и радиотехнические системы
solar cell
porous silicon
quantum dots
efficiency
electrochemical etching
title The effect of a hybrid coating of porous silicon and WS<sub>2</sub> and MoS<sub>2</sub> quantum dots on the electrical characteristics of photosensitive structures
title_full The effect of a hybrid coating of porous silicon and WS<sub>2</sub> and MoS<sub>2</sub> quantum dots on the electrical characteristics of photosensitive structures
title_fullStr The effect of a hybrid coating of porous silicon and WS<sub>2</sub> and MoS<sub>2</sub> quantum dots on the electrical characteristics of photosensitive structures
title_full_unstemmed The effect of a hybrid coating of porous silicon and WS<sub>2</sub> and MoS<sub>2</sub> quantum dots on the electrical characteristics of photosensitive structures
title_short The effect of a hybrid coating of porous silicon and WS<sub>2</sub> and MoS<sub>2</sub> quantum dots on the electrical characteristics of photosensitive structures
title_sort effect of a hybrid coating of porous silicon and ws sub 2 sub and mos sub 2 sub quantum dots on the electrical characteristics of photosensitive structures
topic solar cell
porous silicon
quantum dots
efficiency
electrochemical etching
url https://journals.ssau.ru/pwp/article/viewFile/28179/11065
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