Peculiarities of Charge Transfer in SiO2(Ni)/Si Nanosystems
This work is devoted to study the peculiarities of charge transfer in SiO2(Ni)/Si nanosystems formed as a result of the electrochemical deposition of nickel into the pores of the ion-track silicon oxide template on silicon. Special attention is given to analysis of the results in the context of the...
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| Format: | Article |
| Language: | English |
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Wiley
2018-01-01
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| Series: | Advances in Condensed Matter Physics |
| Online Access: | http://dx.doi.org/10.1155/2018/4927829 |
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| author | Egor Yu. Kaniukov Dzmitry V. Yakimchuk Victoria D. Bundyukova Alena E. Shumskaya Abdulkarim A. Amirov Sergey E. Demyanov |
| author_facet | Egor Yu. Kaniukov Dzmitry V. Yakimchuk Victoria D. Bundyukova Alena E. Shumskaya Abdulkarim A. Amirov Sergey E. Demyanov |
| author_sort | Egor Yu. Kaniukov |
| collection | DOAJ |
| description | This work is devoted to study the peculiarities of charge transfer in SiO2(Ni)/Si nanosystems formed as a result of the electrochemical deposition of nickel into the pores of the ion-track silicon oxide template on silicon. Special attention is given to analysis of the results in the context of the band structure and physical properties of dielectric on semiconductor systems with metallic inclusions in the dielectric matrix. Experimental studies of the current-voltage characteristics of SiO2(Ni)/Si nanostructures demonstrated that value of potential barrier on the Si/metal interface in the pores of the silicon oxide template depended on temperature. On the basis of these results an interpretation of the charge transfer mechanisms in SiO2(Ni)/Si nanosystems at different temperature ranges was proposed. In the temperature region of ~300–200 K charge carrier motion occurs through the n-Si with an employment of metallic clusters in pores being in a contact with the semiconductor, by means of the overbarrier emission of electrons from higher energy levels of Si conduction band. In the lower temperatures (~200-100 K) a current flow takes place only through the semiconductor due to an increase of resistivity on energy barriers n-Si/metal, which leads to a practically complete exclusion of a participation of the metal in the charge transport process. In the low temperatures (~100–20 K), the variable range hopping conduction between pores on the SiO2/Si boundary, containing localized states, dominates. |
| format | Article |
| id | doaj-art-1e42e5d11e7f40549ec5ad4b364045fb |
| institution | Kabale University |
| issn | 1687-8108 1687-8124 |
| language | English |
| publishDate | 2018-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advances in Condensed Matter Physics |
| spelling | doaj-art-1e42e5d11e7f40549ec5ad4b364045fb2025-02-03T05:57:07ZengWileyAdvances in Condensed Matter Physics1687-81081687-81242018-01-01201810.1155/2018/49278294927829Peculiarities of Charge Transfer in SiO2(Ni)/Si NanosystemsEgor Yu. Kaniukov0Dzmitry V. Yakimchuk1Victoria D. Bundyukova2Alena E. Shumskaya3Abdulkarim A. Amirov4Sergey E. Demyanov5Cryogenic Research Division, Scientific-Practical Materials Research Center NAS of Belarus, Minsk 220072, BelarusCryogenic Research Division, Scientific-Practical Materials Research Center NAS of Belarus, Minsk 220072, BelarusCryogenic Research Division, Scientific-Practical Materials Research Center NAS of Belarus, Minsk 220072, BelarusCryogenic Research Division, Scientific-Practical Materials Research Center NAS of Belarus, Minsk 220072, BelarusCenter for Functionalized Magnetic Materials (FunMagMa) & Institute of Physics Mathematics and Informational Technologies, Immanuel Kant Baltic Federal University, Kaliningrad 236016, RussiaCryogenic Research Division, Scientific-Practical Materials Research Center NAS of Belarus, Minsk 220072, BelarusThis work is devoted to study the peculiarities of charge transfer in SiO2(Ni)/Si nanosystems formed as a result of the electrochemical deposition of nickel into the pores of the ion-track silicon oxide template on silicon. Special attention is given to analysis of the results in the context of the band structure and physical properties of dielectric on semiconductor systems with metallic inclusions in the dielectric matrix. Experimental studies of the current-voltage characteristics of SiO2(Ni)/Si nanostructures demonstrated that value of potential barrier on the Si/metal interface in the pores of the silicon oxide template depended on temperature. On the basis of these results an interpretation of the charge transfer mechanisms in SiO2(Ni)/Si nanosystems at different temperature ranges was proposed. In the temperature region of ~300–200 K charge carrier motion occurs through the n-Si with an employment of metallic clusters in pores being in a contact with the semiconductor, by means of the overbarrier emission of electrons from higher energy levels of Si conduction band. In the lower temperatures (~200-100 K) a current flow takes place only through the semiconductor due to an increase of resistivity on energy barriers n-Si/metal, which leads to a practically complete exclusion of a participation of the metal in the charge transport process. In the low temperatures (~100–20 K), the variable range hopping conduction between pores on the SiO2/Si boundary, containing localized states, dominates.http://dx.doi.org/10.1155/2018/4927829 |
| spellingShingle | Egor Yu. Kaniukov Dzmitry V. Yakimchuk Victoria D. Bundyukova Alena E. Shumskaya Abdulkarim A. Amirov Sergey E. Demyanov Peculiarities of Charge Transfer in SiO2(Ni)/Si Nanosystems Advances in Condensed Matter Physics |
| title | Peculiarities of Charge Transfer in SiO2(Ni)/Si Nanosystems |
| title_full | Peculiarities of Charge Transfer in SiO2(Ni)/Si Nanosystems |
| title_fullStr | Peculiarities of Charge Transfer in SiO2(Ni)/Si Nanosystems |
| title_full_unstemmed | Peculiarities of Charge Transfer in SiO2(Ni)/Si Nanosystems |
| title_short | Peculiarities of Charge Transfer in SiO2(Ni)/Si Nanosystems |
| title_sort | peculiarities of charge transfer in sio2 ni si nanosystems |
| url | http://dx.doi.org/10.1155/2018/4927829 |
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