APA (7th ed.) Citation

Yang, M., Wang, K., Yu, B., Fu, Z., Su, C., Huang, Q., & Huang, R. Endurance Enhancement in Hafnia-Based Ferroelectric Capacitor Through Anti-Ferroelectric Zirconia Seed Layer for Memory Applications. IEEE.

Chicago Style (17th ed.) Citation

Yang, Mengxuan, Kaifeng Wang, Bocheng Yu, Zhiyuan Fu, Chang Su, Qianqian Huang, and Ru Huang. Endurance Enhancement in Hafnia-Based Ferroelectric Capacitor Through Anti-Ferroelectric Zirconia Seed Layer for Memory Applications. IEEE.

MLA (9th ed.) Citation

Yang, Mengxuan, et al. Endurance Enhancement in Hafnia-Based Ferroelectric Capacitor Through Anti-Ferroelectric Zirconia Seed Layer for Memory Applications. IEEE.