Si1−xGex nanowire based metal‐semiconductor‐metal Schottky biristor: Design and sensitivity analysis
Abstract The incorporation of Si1−xGex nanowire based metal‐semiconductor‐metal (MSM) Schottky biristor allows the conceptualization and realization of low latch‐up and latch‐down voltages with retained latching window. With the aim of investigating the device governing physics and device performanc...
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| Format: | Article |
| Language: | English |
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Wiley
2021-11-01
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| Series: | IET Circuits, Devices and Systems |
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| Online Access: | https://doi.org/10.1049/cds2.12065 |
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| _version_ | 1832559608206458880 |
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| author | Shaleen Nr Sangeeta Singh Pankaj Kumar |
| author_facet | Shaleen Nr Sangeeta Singh Pankaj Kumar |
| author_sort | Shaleen Nr |
| collection | DOAJ |
| description | Abstract The incorporation of Si1−xGex nanowire based metal‐semiconductor‐metal (MSM) Schottky biristor allows the conceptualization and realization of low latch‐up and latch‐down voltages with retained latching window. With the aim of investigating the device governing physics and device performance, mathematical simulation is carried out using exhaustive and calibrated 2D Technology computer‐aided design (TCAD) device simulation. The device performance is investigated with respect to channel doping, electrode work function, channel length, temperature and mole fraction (x) to maximize the latching window size and minimize the latch‐up voltage. The detailed sensitivity analysis is also carried for the proposed device with parametric sweep method. |
| format | Article |
| id | doaj-art-1c2593f60912486dbca773d4003fb658 |
| institution | Kabale University |
| issn | 1751-858X 1751-8598 |
| language | English |
| publishDate | 2021-11-01 |
| publisher | Wiley |
| record_format | Article |
| series | IET Circuits, Devices and Systems |
| spelling | doaj-art-1c2593f60912486dbca773d4003fb6582025-02-03T01:29:37ZengWileyIET Circuits, Devices and Systems1751-858X1751-85982021-11-0115874575410.1049/cds2.12065Si1−xGex nanowire based metal‐semiconductor‐metal Schottky biristor: Design and sensitivity analysisShaleen Nr0Sangeeta Singh1Pankaj Kumar2Microelectronics and VLSI Lab National Institute of Technology Patna Patna IndiaMicroelectronics and VLSI Lab National Institute of Technology Patna Patna IndiaMicroelectronics and VLSI Lab National Institute of Technology Patna Patna IndiaAbstract The incorporation of Si1−xGex nanowire based metal‐semiconductor‐metal (MSM) Schottky biristor allows the conceptualization and realization of low latch‐up and latch‐down voltages with retained latching window. With the aim of investigating the device governing physics and device performance, mathematical simulation is carried out using exhaustive and calibrated 2D Technology computer‐aided design (TCAD) device simulation. The device performance is investigated with respect to channel doping, electrode work function, channel length, temperature and mole fraction (x) to maximize the latching window size and minimize the latch‐up voltage. The detailed sensitivity analysis is also carried for the proposed device with parametric sweep method.https://doi.org/10.1049/cds2.12065p‐n junctionsmetal‐semiconductor‐metal structuresphotodetectorselectrodesSchottky barriersresistors |
| spellingShingle | Shaleen Nr Sangeeta Singh Pankaj Kumar Si1−xGex nanowire based metal‐semiconductor‐metal Schottky biristor: Design and sensitivity analysis IET Circuits, Devices and Systems p‐n junctions metal‐semiconductor‐metal structures photodetectors electrodes Schottky barriers resistors |
| title | Si1−xGex nanowire based metal‐semiconductor‐metal Schottky biristor: Design and sensitivity analysis |
| title_full | Si1−xGex nanowire based metal‐semiconductor‐metal Schottky biristor: Design and sensitivity analysis |
| title_fullStr | Si1−xGex nanowire based metal‐semiconductor‐metal Schottky biristor: Design and sensitivity analysis |
| title_full_unstemmed | Si1−xGex nanowire based metal‐semiconductor‐metal Schottky biristor: Design and sensitivity analysis |
| title_short | Si1−xGex nanowire based metal‐semiconductor‐metal Schottky biristor: Design and sensitivity analysis |
| title_sort | si1 xgex nanowire based metal semiconductor metal schottky biristor design and sensitivity analysis |
| topic | p‐n junctions metal‐semiconductor‐metal structures photodetectors electrodes Schottky barriers resistors |
| url | https://doi.org/10.1049/cds2.12065 |
| work_keys_str_mv | AT shaleennr si1xgexnanowirebasedmetalsemiconductormetalschottkybiristordesignandsensitivityanalysis AT sangeetasingh si1xgexnanowirebasedmetalsemiconductormetalschottkybiristordesignandsensitivityanalysis AT pankajkumar si1xgexnanowirebasedmetalsemiconductormetalschottkybiristordesignandsensitivityanalysis |