Correlation between structural properties and electrochemical proton insertion in (001) VO2 epitaxial films
We epitaxially grew rutile-structured VO _2 films with various out-of-plane lattice constants on (001) TiO _2 substrates by pulsed laser deposition and investigated their protonation by electrochemically injecting protons to the films in transistor structures with gate layers of proton conducting Na...
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| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2025-01-01
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| Series: | Applied Physics Express |
| Subjects: | |
| Online Access: | https://doi.org/10.35848/1882-0786/adc8f9 |
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| Summary: | We epitaxially grew rutile-structured VO _2 films with various out-of-plane lattice constants on (001) TiO _2 substrates by pulsed laser deposition and investigated their protonation by electrochemically injecting protons to the films in transistor structures with gate layers of proton conducting Nafion membranes. We found that VO _2 films with out-of-plane lattice expansion are less protonated. On the basis of the experimental results, we discuss the correlation between the out-of-plane lattice expansion and protonation of (001) VO _2 epitaxial films and highlight that reducing lattice defects is key to promoting the protonation of VO _2 films. |
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| ISSN: | 1882-0786 |