Ultra-fast etching of photoresist by reactive atmospheric-pressure thermal plasma jet with surface temperature measurement
Atmospheric-pressure reactive thermal plasma jet (R-TPJ) with Ar and O _2 gas mixture was applied to the etching of photoresist (PR) on a silicon wafer. Optical interference contactless thermometry (OICT) and optical emission spectroscopy were carried out to clarify the relationship between the etch...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
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IOP Publishing
2025-01-01
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| Series: | Applied Physics Express |
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| Online Access: | https://doi.org/10.35848/1882-0786/ada374 |
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| author | Kyohei Matsumoto Hibiki Kato Jiawen Yu Hiroaki Hanafusa Seiichiro Higashi |
| author_facet | Kyohei Matsumoto Hibiki Kato Jiawen Yu Hiroaki Hanafusa Seiichiro Higashi |
| author_sort | Kyohei Matsumoto |
| collection | DOAJ |
| description | Atmospheric-pressure reactive thermal plasma jet (R-TPJ) with Ar and O _2 gas mixture was applied to the etching of photoresist (PR) on a silicon wafer. Optical interference contactless thermometry (OICT) and optical emission spectroscopy were carried out to clarify the relationship between the etching rate, amount of atomic oxygen radicals, and PR surface temperature. The results show that the O _2 flow rate and surface temperature are obviously related to the etching rate of the PR. The R-TPJ irradiation with input current at 60 A reaches surface temperature of 720 K within 7 ms and achieved an etching rate of 84 μ m s ^−1 . |
| format | Article |
| id | doaj-art-19dea8df00a44b55922da4037f821646 |
| institution | Kabale University |
| issn | 1882-0786 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | IOP Publishing |
| record_format | Article |
| series | Applied Physics Express |
| spelling | doaj-art-19dea8df00a44b55922da4037f8216462025-01-29T10:08:19ZengIOP PublishingApplied Physics Express1882-07862025-01-0118101650310.35848/1882-0786/ada374Ultra-fast etching of photoresist by reactive atmospheric-pressure thermal plasma jet with surface temperature measurementKyohei Matsumoto0https://orcid.org/0009-0006-3734-3842Hibiki Kato1Jiawen Yu2https://orcid.org/0009-0004-9050-8103Hiroaki Hanafusa3https://orcid.org/0000-0002-4641-4968Seiichiro Higashi4Graduate School of Advanced Science and Engineering, Hiroshima University , Kagamiyama 1-3-1, Higashihiroshima, Hiroshima, 739-8530, JapanGraduate School of Advanced Science and Engineering, Hiroshima University , Kagamiyama 1-3-1, Higashihiroshima, Hiroshima, 739-8530, JapanGraduate School of Advanced Science and Engineering, Hiroshima University , Kagamiyama 1-3-1, Higashihiroshima, Hiroshima, 739-8530, JapanGraduate School of Advanced Science and Engineering, Hiroshima University , Kagamiyama 1-3-1, Higashihiroshima, Hiroshima, 739-8530, JapanGraduate School of Advanced Science and Engineering, Hiroshima University , Kagamiyama 1-3-1, Higashihiroshima, Hiroshima, 739-8530, JapanAtmospheric-pressure reactive thermal plasma jet (R-TPJ) with Ar and O _2 gas mixture was applied to the etching of photoresist (PR) on a silicon wafer. Optical interference contactless thermometry (OICT) and optical emission spectroscopy were carried out to clarify the relationship between the etching rate, amount of atomic oxygen radicals, and PR surface temperature. The results show that the O _2 flow rate and surface temperature are obviously related to the etching rate of the PR. The R-TPJ irradiation with input current at 60 A reaches surface temperature of 720 K within 7 ms and achieved an etching rate of 84 μ m s ^−1 .https://doi.org/10.35848/1882-0786/ada374plasmaetchingtemperature measurementorganic filmedge bead |
| spellingShingle | Kyohei Matsumoto Hibiki Kato Jiawen Yu Hiroaki Hanafusa Seiichiro Higashi Ultra-fast etching of photoresist by reactive atmospheric-pressure thermal plasma jet with surface temperature measurement Applied Physics Express plasma etching temperature measurement organic film edge bead |
| title | Ultra-fast etching of photoresist by reactive atmospheric-pressure thermal plasma jet with surface temperature measurement |
| title_full | Ultra-fast etching of photoresist by reactive atmospheric-pressure thermal plasma jet with surface temperature measurement |
| title_fullStr | Ultra-fast etching of photoresist by reactive atmospheric-pressure thermal plasma jet with surface temperature measurement |
| title_full_unstemmed | Ultra-fast etching of photoresist by reactive atmospheric-pressure thermal plasma jet with surface temperature measurement |
| title_short | Ultra-fast etching of photoresist by reactive atmospheric-pressure thermal plasma jet with surface temperature measurement |
| title_sort | ultra fast etching of photoresist by reactive atmospheric pressure thermal plasma jet with surface temperature measurement |
| topic | plasma etching temperature measurement organic film edge bead |
| url | https://doi.org/10.35848/1882-0786/ada374 |
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