Influence of Thermal Treatment Under Various Oxygen Pressures on The Electronic Properties of Ceramics and Single Crystals of Pure and Tin-Doped Indium Oxide
The different electronic behaviors of pure and tin-doped indium oxides with various thermal treatments under high and low oxygen pressure are discussed on the basis of the evolution of the band energy diagram. A critical concentration of “active oxygen vacancies” associated with donor centers is nec...
Saved in:
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley
1992-01-01
|
| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1155/1992/56168 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1832562657461272576 |
|---|---|
| author | Shijie Wen G. Campet J. Portier |
| author_facet | Shijie Wen G. Campet J. Portier |
| author_sort | Shijie Wen |
| collection | DOAJ |
| description | The different electronic behaviors of pure and tin-doped indium oxides with various thermal treatments
under high and low oxygen pressure are discussed on the basis of the evolution of the band energy
diagram. A critical concentration of “active oxygen vacancies” associated with donor centers is necessary
to achieve high electronic mobility in ITO (Indium Tin Oxide). |
| format | Article |
| id | doaj-art-18fe0804d20e4914b3a1ae8cf53d9e61 |
| institution | Kabale University |
| issn | 0882-7516 1563-5031 |
| language | English |
| publishDate | 1992-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Active and Passive Electronic Components |
| spelling | doaj-art-18fe0804d20e4914b3a1ae8cf53d9e612025-02-03T01:21:59ZengWileyActive and Passive Electronic Components0882-75161563-50311992-01-0114419119810.1155/1992/56168Influence of Thermal Treatment Under Various Oxygen Pressures on The Electronic Properties of Ceramics and Single Crystals of Pure and Tin-Doped Indium OxideShijie Wen0G. Campet1J. Portier2Laboratoire de Chimie du Solide du CNRS, Université de Bordeaux I, 351 cours de la libération, Talence cedex, 33405, FranceLaboratoire de Chimie du Solide du CNRS, Université de Bordeaux I, 351 cours de la libération, Talence cedex, 33405, FranceLaboratoire de Chimie du Solide du CNRS, Université de Bordeaux I, 351 cours de la libération, Talence cedex, 33405, FranceThe different electronic behaviors of pure and tin-doped indium oxides with various thermal treatments under high and low oxygen pressure are discussed on the basis of the evolution of the band energy diagram. A critical concentration of “active oxygen vacancies” associated with donor centers is necessary to achieve high electronic mobility in ITO (Indium Tin Oxide).http://dx.doi.org/10.1155/1992/56168 |
| spellingShingle | Shijie Wen G. Campet J. Portier Influence of Thermal Treatment Under Various Oxygen Pressures on The Electronic Properties of Ceramics and Single Crystals of Pure and Tin-Doped Indium Oxide Active and Passive Electronic Components |
| title | Influence of Thermal Treatment Under Various Oxygen Pressures on The Electronic Properties of Ceramics and Single Crystals of Pure and Tin-Doped Indium Oxide |
| title_full | Influence of Thermal Treatment Under Various Oxygen Pressures on The Electronic Properties of Ceramics and Single Crystals of Pure and Tin-Doped Indium Oxide |
| title_fullStr | Influence of Thermal Treatment Under Various Oxygen Pressures on The Electronic Properties of Ceramics and Single Crystals of Pure and Tin-Doped Indium Oxide |
| title_full_unstemmed | Influence of Thermal Treatment Under Various Oxygen Pressures on The Electronic Properties of Ceramics and Single Crystals of Pure and Tin-Doped Indium Oxide |
| title_short | Influence of Thermal Treatment Under Various Oxygen Pressures on The Electronic Properties of Ceramics and Single Crystals of Pure and Tin-Doped Indium Oxide |
| title_sort | influence of thermal treatment under various oxygen pressures on the electronic properties of ceramics and single crystals of pure and tin doped indium oxide |
| url | http://dx.doi.org/10.1155/1992/56168 |
| work_keys_str_mv | AT shijiewen influenceofthermaltreatmentundervariousoxygenpressuresontheelectronicpropertiesofceramicsandsinglecrystalsofpureandtindopedindiumoxide AT gcampet influenceofthermaltreatmentundervariousoxygenpressuresontheelectronicpropertiesofceramicsandsinglecrystalsofpureandtindopedindiumoxide AT jportier influenceofthermaltreatmentundervariousoxygenpressuresontheelectronicpropertiesofceramicsandsinglecrystalsofpureandtindopedindiumoxide |