Universal Digital Probe Electrometer for Testing Semiconductor Wafers

Non-contact electrical methods are widely used for research and control of semiconductor wafers. The methods are usually based on surface potential measurement (CPD) in combination with illumination and/or deposition of charges on the sample using a corona discharge, and are also based on the measur...

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Main Authors: A. L. Zharin, U. A. Mikitsevich, A. I. Svistun, K. U. Pantsialeyeu
Format: Article
Language:English
Published: Belarusian National Technical University 2023-10-01
Series:Приборы и методы измерений
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Online Access:https://pimi.bntu.by/jour/article/view/828
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author A. L. Zharin
U. A. Mikitsevich
A. I. Svistun
K. U. Pantsialeyeu
author_facet A. L. Zharin
U. A. Mikitsevich
A. I. Svistun
K. U. Pantsialeyeu
author_sort A. L. Zharin
collection DOAJ
description Non-contact electrical methods are widely used for research and control of semiconductor wafers. The methods are usually based on surface potential measurement (CPD) in combination with illumination and/or deposition of charges on the sample using a corona discharge, and are also based on the measurement of surface photo-emf. By photo-EMF (SPV) it is possible to determine the lifetime of minor charge carriers, their diffusion length and detect traces of heavy metals on the surface. In addition, using photo-EMF it is possible to determine the surface resistance of the plate, some parameters of the dielectric layer on the surface and barrier photo-EMF (JPV). Electrical performance results reflect the influence of near-surface characteristics on the final performance of devices. The aim of the work was to develop a universal digital probe electrometer that implements various non-contact electrical methods for analyzing semiconductor wafers, in which the change in operating modes and configuration, transmission of the received data, remote testing and calibration are carried out via digital local control channels. This paper describes a universal digital probe electrometer developed by the authors, which implements the above-described non-contact electrical methods for analyzing semiconductor wafers (CPD, SPV and JPV), in which the change in operating modes and configuration, transmission of the received data, remote testing and calibration are carried out via digital local control channels. Due to their high speed, electrical characterization methods are suitable for inspecting semiconductor wafers during production. The results of testing the developed probe electrometer in CPD, SPV and JPV modes are presented, which reflect the effectiveness of the proposed approaches.
format Article
id doaj-art-18c3f979e2594477a14af243f7061f06
institution Kabale University
issn 2220-9506
2414-0473
language English
publishDate 2023-10-01
publisher Belarusian National Technical University
record_format Article
series Приборы и методы измерений
spelling doaj-art-18c3f979e2594477a14af243f7061f062025-02-03T11:37:39ZengBelarusian National Technical UniversityПриборы и методы измерений2220-95062414-04732023-10-0114316117210.21122/2220-9506-2023-14-3-161-172619Universal Digital Probe Electrometer for Testing Semiconductor WafersA. L. Zharin0U. A. Mikitsevich1A. I. Svistun2K. U. Pantsialeyeu3Belarusian National Technical UniversityBelarusian National Technical UniversityBelarusian National Technical UniversityBelarusian National Technical UniversityNon-contact electrical methods are widely used for research and control of semiconductor wafers. The methods are usually based on surface potential measurement (CPD) in combination with illumination and/or deposition of charges on the sample using a corona discharge, and are also based on the measurement of surface photo-emf. By photo-EMF (SPV) it is possible to determine the lifetime of minor charge carriers, their diffusion length and detect traces of heavy metals on the surface. In addition, using photo-EMF it is possible to determine the surface resistance of the plate, some parameters of the dielectric layer on the surface and barrier photo-EMF (JPV). Electrical performance results reflect the influence of near-surface characteristics on the final performance of devices. The aim of the work was to develop a universal digital probe electrometer that implements various non-contact electrical methods for analyzing semiconductor wafers, in which the change in operating modes and configuration, transmission of the received data, remote testing and calibration are carried out via digital local control channels. This paper describes a universal digital probe electrometer developed by the authors, which implements the above-described non-contact electrical methods for analyzing semiconductor wafers (CPD, SPV and JPV), in which the change in operating modes and configuration, transmission of the received data, remote testing and calibration are carried out via digital local control channels. Due to their high speed, electrical characterization methods are suitable for inspecting semiconductor wafers during production. The results of testing the developed probe electrometer in CPD, SPV and JPV modes are presented, which reflect the effectiveness of the proposed approaches.https://pimi.bntu.by/jour/article/view/828digital probe electrometercontact potential differencesemiconductor waferkelvin probephoto emfcpdspvjpv
spellingShingle A. L. Zharin
U. A. Mikitsevich
A. I. Svistun
K. U. Pantsialeyeu
Universal Digital Probe Electrometer for Testing Semiconductor Wafers
Приборы и методы измерений
digital probe electrometer
contact potential difference
semiconductor wafer
kelvin probe
photo emf
cpd
spv
jpv
title Universal Digital Probe Electrometer for Testing Semiconductor Wafers
title_full Universal Digital Probe Electrometer for Testing Semiconductor Wafers
title_fullStr Universal Digital Probe Electrometer for Testing Semiconductor Wafers
title_full_unstemmed Universal Digital Probe Electrometer for Testing Semiconductor Wafers
title_short Universal Digital Probe Electrometer for Testing Semiconductor Wafers
title_sort universal digital probe electrometer for testing semiconductor wafers
topic digital probe electrometer
contact potential difference
semiconductor wafer
kelvin probe
photo emf
cpd
spv
jpv
url https://pimi.bntu.by/jour/article/view/828
work_keys_str_mv AT alzharin universaldigitalprobeelectrometerfortestingsemiconductorwafers
AT uamikitsevich universaldigitalprobeelectrometerfortestingsemiconductorwafers
AT aisvistun universaldigitalprobeelectrometerfortestingsemiconductorwafers
AT kupantsialeyeu universaldigitalprobeelectrometerfortestingsemiconductorwafers